相关论文: Highly uniform GaSb quantum dots with indirect-dir…
The distance-dependent interaction of an emitter with a plasmonic nanoparticle or surface forms the basis of the field of plexitonics. Semiconductor quantum dots (QDs) are robust emitters due to their photostability, and offer the…
Large-area high density patterns of quantum dots with a diameter of 200 nm have been prepared from a series of four Zn_{0.93}Mn_{0.07}Te/ZnTe multiple quantum well structures of different well width (4 nm, 6 nm, 8 nm and 10 nm) by electron…
The embedding of tunable quantum emitters in a photonic bandgap structure enables the control of dissipative and dispersive interactions between emitters and their photonic bath. Operation in the transmission band, outside the gap, allows…
We study the luminescence dynamics of telecom wavelength InAs quantum dots grown on InP(111)A by droplet epitaxy. The use of the ternary alloy InAlGaAs as a barrier material leads to photon emission in the 1.55 $\mu$m telecom C-band. The…
Two-terminal tandem cell architectures are believed to be an effective way to further improve the power conversion efficiency in solution processed photovoltaics. To design an efficient tandem solar cell, two key issues need to be…
Solid-state quantum emitters coupled to integrated photonic nanostructures are quintessential for exploring fundamental phenomena in cavity quantum electrodynamics and widely employed in photonic quantum technologies such as non-classical…
Integrated photonics provides a powerful approach for developing compact, stable and scalable architectures for the generation, manipulation and detection of quantum states of light. To this end, several material platforms are being…
InGaAs/GaAsBi/InGaAs quantum wells (QWs) were grown on GaAs substrates by gas source molecular beam epitaxy for realizing the type II band-edge line-up. Both type I and type II transitions were observed in the Bi containing W QWs and the…
We demonstrate nearly-spherical, strain-free, self-assembled Ge quantum dots (QDs) fully encapsulated by AlAs, grown on (100) GaAs by molecular beam epitaxy (MBE). The QDs were formed without a wetting layer using a high temperature,…
The success of all-graphene electronics is severely hindered by the challenging realization and subsequent integration of semiconducting channels and metallic contacts. Here, we comprehensively investigate the electronic transport across…
We analyze the bound-state spectra of mass-profile quantum dots in graphene, a system at current experimental reach. Homogeneous perpendicular magnetic fields are also considered which result in breaking the valley degeneracy. The spectra…
We study the optical properties of hydrogen passivated silicon, germanium and mixed Ge/Si core/shell quantum dots (QDs) using high accuracy Density Functional Theory (DFT) and time-dependent DFT (TDFT). We employ the hybrid DFT functional…
The strong-coupling regime of cavity-quantum-electrodynamics (cQED) represents light-matter interaction at the fully quantum level. Adding a single photon shifts the resonance frequencies, a profound nonlinearity. cQED is a test-bed of…
Entangled photon sources (EPSs) are essential building blocks for scalable quantum communication and quantum key distribution (QKD). We present a stable, highly nondegenerate EPS based on type-0 spontaneous parametric down-conversion (SPDC)…
The design of some optical devices such as semiconductor optical amplifiers for telecommunication applications requires polarization-insensitive optical emission at the long wavelengths (1300-1550 nm). Self-assembled InAs/GaAs quantum dots…
We demonstrate purely resonant continuous-wave optical laser excitation to coherently prepare an excitonic state of a single semiconductor quantum dot (QDs) inside a high quality pillar microcavity. As a direct proof of QD resonance…
The integration of entangled photon emitters in nanophotonic structures designed for the broadband enhancement of photon extraction is a major challenge for quantum information technologies. We study the potential of quantum dot (QD)…
We report a colloidal synthesis of blue emissive, stable cube-shaped CsPbBr3 quantum dots (QDs) in the strong quantum confinement regime via a dissolution-recrystallization starting from pre-synthesized (KxCs1-x)4PbBr6 nanocrystals which…
Aluminum gallium arsenide (AlGaAs) and related III-V semiconductors have excellent optoelectronic properties. They also possess strong material nonlinearity as well as high refractive indices. In view of these properties, AlGaAs is a…
Quantum dots (QDs) are semiconductor nanostructures in which a three dimensional potential trap produces an electronic quantum confinement, thus mimicking the behaviour of single atomic dipole-like transitions. However unlike atoms, QDs can…