相关论文: Bistability of the BiOi complex and its implicatio…

This study focuses on the properties of the B$_\text{i}$O$_\text{i}$ (interstitial Boron~-~interstitial Oxygen) and C$_\text{i}$O$_\text{i}$ (interstitial Carbon~-~interstitial Oxygen) defect complexes by \SI{5.5}{\mega\electronvolt}…

Boron-doped silicon detectors used in high radiation environments like the future HL-LHC show a degradation in device performance due to the radiation induced deactivation of the active boron dopant. This effect, known as the so-called…

We report on the structural properties of highly B-doped silicon (> 2 at. %) realised by nanosecond laser doping. We investigate the crystalline quality, deformation and B distribution profile of the doped layer by STEM analysis followed by…

The local atomic structure of superconducting NdO$_{1-x}$F$_{x}$BiS$_{2}$ ($x$=0.2 and 0.4) is investigated using neutron diffraction and the pair density function analysis technique. In the non-superconducting $x$=0.2 composition,…

Precision measurements of four neutrino oscillation parameters, $\theta_{12}$, $\theta_{13}$, $\Delta m^2_{21}$, and |$\Delta m^2_{31}$|, face significant interference from a previously overlooked correlated background. Recent findings from…

BiTeI is a polar semiconductor with strong spin-orbit coupling (SOC) that produces large Rashba spin splitting. Due to its potential utility in spintronics and magnetoelectrics, it is essential to understand how defects impact the spin…

Silicon carbide (SiC) is a wide band gap semiconductor and an attractive candidate for applications in harsh environments such as space, fusion, or future high luminosity colliders. Due to the large band gap, the leakage currents in SiC…

In organic light emitting diodes with small area the current may be dominated by a finite number, N of sites in which the electron-hole recombination occurs. As a result, averaging over the hyperfine magnetic fields, b_h, that are generated…

In previous work it was shown that the radius of nucleus R is determined by the alpha-cluster structure and can be estimated on the number of alpha-clusters disregarding to the number of excess neutrons. A hypothesis also was made that the…

The role of interface states and dielectric mismatch is studied in ultrathin P-doped silicon-on-insulator (SOI) films with thickness of the device layer ($H_{SOI}$) varying from 30 to 8 nm and dopant concentration ($n_{D}$) ranging from…

Optical bistability is fundamental for all-optical switches, but typically requires high-Q cavities with micrometer sizes. Through boosting nonlinearity with photo-thermo-optical effects, we achieve bistability in a silicon Mie resonator…

Technological applications of novel metastable materials are frequently inhibited by abundant defects residing in these materials. Using first-principles methods we investigate the point defect thermodynamics and phase segregation in the…

This work focuses on the investigation of radiation induced defects responsible for the degradation of silicon detectors. Comparative studies of the defects induced by irradiation with 60Co- rays, 6 and 15 MeV electrons, 23 GeV protons and…

Chemical nature of point defects, their segregation, cluster or complex formation in ZnO is an important area of investigation. In this report, 1.2 MeV Ar ion beam is used to incorporate defects in granular ZnO. Evolution of defective state…

The high pressure structural properties of bismuth oxide Bi2SiO5 have been investigated up to 28 GPa using in situ powder synchrotron X-ray diffraction and up to 50 GPa with DFT calculations. The monoclinic structure is found to persist up…

Silicon detector technologies are often employed for high energy particle physics applications due to their excellent radiation hardness. Radiation damage in the form of bulk or substrate damage is dependent on the incident particle species…

We study modulation instability (MI) of flat states in two-component spin-orbit-coupled (SOC) Bose-Einstein condensates (BECs) in the framework of coupled Gross-Pitaevskii equations for two components of the pseudospinor wave function. The…

As implemented in the commercialized device modeling software, the four-state nonradiative multi-phonon model has attracted intensive attention in the past decade for describing the physics in negative bias temperature instability (NBTI)…

Very high energy resolution photoemission experiments on high quality samples of optimally doped Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ show new features in the low-energy electronic excitations. A marked change in the binding energy and…

Defects introduced to the surface of Bi(111) break the translational symmetry and modify the surface states locally. We present a theoretical and experimental study of the 2D defects on the surface of Bi(111) and the states that they…