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Doping Bi$_2$Se$_3$ by magnetic ions represents an interesting problem since it may break the time reversal symmetry needed to maintain the topological insulator character. Mn dopants in Bi$_2$Se$_3$ represent one of the most studied…

材料科学 · 物理学 2020-02-26 K. Carva , P. Baláž , J. Šebesta , I. Turek , J. Kudrnovský , F. Máca , V. Drchal , J. Chico , V. Sechovský , J. Honolka

The pressure driven Mott-transition in Chromium doped V2O3 films is investigated by direct electrical measurements on polycrystalline films with thicknesses down to 10 nm, and doping concentrations of 2%, 5% and 15%. A change in resistivity…

强关联电子 · 物理学 2024-05-15 Johannes Mohr , Tyler Hennen , Daniel Bedau , Rainer Waser , Dirk J. Wouters

Recent advances in the characterization of hexagonal-diamond silicon (2H-Si) have shown that this material possesses remarkably different structural, electronic, and optical properties as compared to the common cubic-diamond (3C) polytype.…

材料科学 · 物理学 2024-10-22 Marc Túnica , Alberto Zobelli , Michele Amato

The atomic thickness of two-dimensional (2D) materials provides a unique opportunity to control material properties and engineer new functionalities by electrostatic doping. Electrostatic doping has been demonstrated to tune the electrical…

材料科学 · 物理学 2018-08-01 Shengwei Jiang , Lizhong Li , Zefang Wang , Kin Fai Mak , Jie Shan

A heavy-mass electron state is realized in a doped valence bond solid (Ti1-xVx)2O3. In this system, itinerant holes mediate the mainly ferromagnetic RKKY interaction between the localized magnetic moments and become readily spin-polarized…

强关联电子 · 物理学 2015-05-27 M. Uchida , Y. Onose , Y. Tokura

When electron doped, the layered transition metal nitrides ${\cal T}$NCl (${\cal T}$ = group IVB transition metal ion) become impressive superconductors with critical temperature T$_c$= 15-26K. Here we take the most studied member, ZrNCl,…

超导电性 · 物理学 2015-06-22 Antia S. Botana , Warren E. Pickett

Here, we report an evolution of structural, magnetic and transport behavior in doped SrRu$_{1-x}$Ga$_x$O$_3$ ($x$ $\le$ 0.2). The nonmagnetic dopant Ga$^{3+}$ (3$d^{10}$) not only acts for magnetic site dilution in SrRuO$_3$ but also it…

强关联电子 · 物理学 2019-10-10 Renu Gupta , Imtiaz Noor Bhatti , A K Pramanik

Modulation-doped AlGaAs/GaAs heterostructures are utilized extensively in the study of quantum transport in nanostructures, but charge fluctuations associated with remote ionized dopants often produce deleterious effects. Electric…

介观与纳米尺度物理 · 物理学 2015-06-19 Sumit Mondal , Geoffrey C. Gardner , John D. Watson , Saeed Fallahi , Amir Yacoby , Michael J. Manfra

Fluorite structure ferroelectrics, especially hafnium oxide, are widely investigated for their application in non-volatile memories, sensors, actuators, RF devices and energy harvesters. Due to the metastable nature of the ferroelectric…

The role of defects in solids of mixed ionic-covalent bonds such as ferroelectric oxides is complex. Current understanding of defects on ferroelectric properties at the single-defect level remains mostly at the empirical level, and the…

材料科学 · 物理学 2017-09-13 Shi Liu , R. E. Cohen

The defect induced chemical expansion in acceptor-doped barium zirconate is investigated using density-functional theory (DFT) calculations. The two defect species involved in the hydration reaction, the +2 charged oxygen vacancy and the…

材料科学 · 物理学 2015-09-01 Erik Jedvik , Anders Lindman , Magnús Þór Benediktsson , Göran Wahnström

We use a combination of ab initio calculations and statistical mechanics to investigate the substitution of Li+ for Mg2+ in magnesium hydride (MgH2) accompanied by the formation of hydrogen vacancies with positive charge (with respect to…

材料科学 · 物理学 2015-05-20 Kyle C. Smith , Timothy S. Fisher , Umesh V. Waghmare , Ricardo Grau-Crespo

The carrier type and density in Bi2Se3 single crystals are systematically tuned by introducing a calcium (Ca) dopant. A carrier density of ~1x1017 cm-3 which corresponds to ~25 meV in the Fermi energy is obtained in both n- and p-type…

材料科学 · 物理学 2015-05-19 Zhiyong Wang , Tao Lin , Peng Wei , Xinfei Liu , Randy Dumas , Kai Liu , Jing Shi

Liquid-argon scintillation detectors are used in fundamental physics experiments and are being considered for security applications. Previous studies have suggested that the addition of small amounts of xenon dopant improves performance in…

We have studied metal/organic semiconductor charge injection in poly(3-hexylthiophene) (P3HT) field-effect transistors with Pt and Au electrodes as a function of annealing in vacuum. At low impurity dopant densities, Au/P3HT contact…

介观与纳米尺度物理 · 物理学 2007-05-23 B. H. Hamadani , H. Ding , Y. Hao , D. Natelson

Superconductivity in copper oxides emerges on doping holes or electrons into their Mott insulating parent compounds. The spin excitations are thought to be the mediating glue for the pairing in superconductivity. Here the momentum and…

超导电性 · 物理学 2017-03-28 Pengfei Jing , Huaisong Zhao , Lulin Kuang , Yu Lan , Shiping Feng

Helium nanodroplets are widely used as a cold, weakly interacting matrix for spectroscopy of embedded species. In this work we excite or ionize doped He droplets using synchrotron radiation and study the effect onto the dopant atoms…

Here we report the structural, electrical and magnetic properties of Fe doped La0.7Ca0.3Mn1-xFexO3 with x = 0.0 to 1.0 prepared by conventional solid state reaction method. Simulated data on XRD shows an increase in volume with an increase…

强关联电子 · 物理学 2012-01-23 Neeraj Kumar , H. Kishan , V. P. S. Awana

We report the doping high concentration of tetravalent Ge4+ ions (5 mol % for x = 0.05 to 30 mol % for x = 0.30) at the Fe3+ sites of Fe2-xGexO3 system by chemical coprecipitation route. The charge state of Fe and Ge ions has been modified…

材料科学 · 物理学 2023-09-08 Divya Sherin G T , R. N Bhowmik

Ce3+ doped SrS phosphors with a charge-compensating Na+ for light-emitting diode (LED) applications have been successfully synthesized via a solid-state reaction method, which can be indexed to rock-salt-like crystal structures of Fm-3m…