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相关论文: Mode Delocalization in Disordered Photonic Chern I…

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We show the existence of energies exhibiting dynamical delocalization in discrete 2D Chern insulators perturbed by a random potential in a general setting. Our proof exploits two main features of the model: jumps in the integer value of the…

数学物理 · 物理学 2026-05-07 Gianluca Panati , Constanza Rojas-Molina , Vincenzo Rossi

The Chern-Hopf insulator is an unconventional three-dimensional topological insulator with a bulk gap and gapless boundary states without protection from global discrete symmetries. This study investigates its fate in the presence of…

无序系统与神经网络 · 物理学 2025-05-13 Soumya Bera , Ivan Dutta , Roderich Moessner , Kush Saha

We consider the two-dimensional topological Chern insulator in the presence of static disorder. Generic quantum states in this system are Anderson localized. However, topology requires the presence of a subset of critical states, with…

介观与纳米尺度物理 · 物理学 2023-08-29 Mateo Moreno-Gonzalez , Johannes Dieplinger , Alexander Altland

We provide evidence that, alongside topologically protected edge states, two-dimensional Chern insulators also support localised bulk states deep in their valance and conduction bands. These states manifest when local potential gradients…

介观与纳米尺度物理 · 物理学 2020-07-24 Chris N. Self , Alvaro Rubio-García , Juan Jose García-Ripoll , Jiannis K. Pachos

A central property of Chern insulators is the robustness of the topological phase and edge states to impurities in the system. Despite this, Chern number cannot be straightforwardly calculated in the presence of disorder. Recently, work has…

强关联电子 · 物理学 2022-10-20 Peru d'Ornellas , Ryan Barnett , Derek K. K. Lee

We analyse the topological transition and localization evolution of disordered two dimensional systems with non trivial topology based on bipartite lattices. Chern insulators with broken time reversal symmetry show non standard behavior for…

介观与纳米尺度物理 · 物理学 2015-09-03 Eduardo V. Castro , M. Pilar López-Sancho , María A. H. Vozmediano

We investigate the scattering and localization properties of edge and bulk states in a disordered two-dimensional topological insulator when they coexist at the same fermi energy. Due to edge-bulk backscattering (which is not prohibited…

介观与纳米尺度物理 · 物理学 2014-08-26 Yan-Yang Zhang , Man Shen , Xing-Tao An , Qing-Feng Sun , Xin-Cheng Xie , Kai Chang , Shu-Shen Li

The quantum anomalous Hall system with Chern number 2 can be destroyed by sufficiently strong disorder. During its process towards localization, it was found that the electronic states will be directly localized to an Anderson insulator…

介观与纳米尺度物理 · 物理学 2016-01-12 Zhi-Gang Song , Yan-Yang Zhang , Jun-Tao Song , Shu-Shen Li

We explore the physics of a Chern insulator subjected to a two step Floquet drive. We analytically obtain the phase diagram and show that the system can exhibit different topological phases characterized by presence and chirality of…

无序系统与神经网络 · 物理学 2016-12-07 Sthitadhi Roy , G. J. Sreejith

We derive the expression for the local Hall conductivity for systems that lack translation symmetry and use it to study the local fluctuations of the Hall signal around disordered patches in magnetic insulators. We find that the regime in…

介观与纳米尺度物理 · 物理学 2026-03-11 Zachariah Addison , Nandini Trivedi

Three dimensional topological insulators are bulk insulators with $\mathbf{Z}_2$ topological electronic order that gives rise to conducting light-like surface states. These surface electrons are exceptionally resistant to localization by…

介观与纳米尺度物理 · 物理学 2017-03-07 Yishuai Xu , Janet Chiu , Lin Miao , Haowei He , Zhanybek Alpichshev , A. Kapitulnik , Rudro R. Biswas , L. Andrew Wray

We use the method of bulk-boundary correspondence of topological invariants to show that disordered topological insulators have at least one delocalized state at their boundary at zero energy. Those insulators which do not have chiral…

无序系统与神经网络 · 物理学 2015-08-06 A. Essin , V. Gurarie

Topological insulators are characterized by specially protected conduction on their outer boundaries. We show that the protected edge conduction exhibited by 2-D topological insulators (and also Chern insulators) is independent of…

介观与纳米尺度物理 · 物理学 2015-09-01 Quansheng Wu , Liang Du , Vincent E. Sacksteder

The quest for nonequilibrium quantum phase transitions is often hampered by the tendency of driving and dissipation to give rise to an effective temperature, resulting in classical behavior. Could this be different when the dissipation is…

无序系统与神经网络 · 物理学 2021-06-30 Alon Beck , Moshe Goldstein

Chern insulators are band insulators which exhibit a gap in the bulk and gapless excitations in the edge. Detection of Chern insulators is a serious challenge in cold atoms since the Hall transport measurements are technically unrealistic…

介观与纳米尺度物理 · 物理学 2013-09-30 Xiong-Jun Liu , K. T. Law , T. K. Ng , Patrick A. Lee

Three-dimensional (3D) topological materials exhibit much richer phenomena than their lower-dimensional counterparts. Here, we propose self-localized topological states (i.e., topological solitons) in a 3D nonlinear photonic Chern…

光学 · 物理学 2022-05-24 Rujiang Li , Pengfei Li , Yongtao Jia , Ying Liu

Topological systems are inherently robust to disorder and continuous perturbations, resulting in dissipation-free edge transport of electrons in quantum solids, or reflectionless guiding of photons and phonons in classical wave systems…

材料科学 · 物理学 2018-07-04 Xiang Ni , Matthew Weiner , Andrea Alù , Alexander B. Khanikaev

We evaluate the real-space second Chern number of four-dimensional Chern insulators using the kernel polynomial method. Our calculations are performed on a four-dimensional system with $30^4$ sites, and the numerical results agree well with…

介观与纳米尺度物理 · 物理学 2026-02-04 Rui Chen , Bin Zhou

It is often thought that emergent phenomena in topological phases of matter are destroyed when tuning to a critical point. In particular, topologically protected edge states supposedly delocalize when the bulk correlation length diverges.…

强关联电子 · 物理学 2020-03-13 Ruben Verresen

Quantum Hall systems are characterized by the quantization of the Hall conductance -- a bulk property rooted in the topological structure of the underlying quantum states. In condensed matter devices, material imperfections hinder a direct…

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