相关论文: Magnetoresistive Sensor Detectivity: A Comparative…

Oscillatory tunneling magnetoresistance (TMR) as a function of spacer thickness is investigated theoretically for a magnetic tunnel junction with a nonmagnetic layer inserted between the tunnel barrier and the ferromagnetic layer. TMR is…

Magnetoresistance (MR) sensors provide cost-effective solutions for diverse industrial and consumer applications, including emerging fields such as internet-of-things (IoT), artificial intelligence and smart living. Commercially available…

Magnetic sensors are important for detecting nuclear magnetization signals in nuclear magnetic resonance (NMR). As a complementary analysis tool to conventional high-field NMR, zero- and ultralow-field (ZULF) NMR detects nuclear…

We report that low frequency (up to 200 kHz) noise spectra of magnetic tunnel junctions with areas ~10^{-10}cm^2$ at 10 Kelvin deviate significantly from the typical 1/f behavior found in large area junctions at room temperature. In most…

The tunnel magnetoresistance (TMR) effect observed in magnetic tunnel junctions (MTJs) is commonly used in many spintronic applications because the effect can easily convert from local magnetic states to electric signals in a wide range of…

Here, a generalized induction coil sensor model, more generalized than other models, has been considered and the equivalent magnetic field of the coil thermal noise and the sensor signal to noise ratio are calculated theoretically based on…

In the absence of any external applied magnetic field, we have found that a magnetic tunnel junction (MTJ) can produce a significant output direct voltage under microwave radiation at frequencies, which are far from the ferromagnetic…

Performance of magnetoresistive sensors is today mainly limited by their 1/f low-frequency noise. Here, we study this noise component in vortex-based TMR sensors. We compare the noise level in different magnetization configurations of the…

This paper presents the design and implementation of a magnetic signal scanning and imaging system based on the giant magnetoimpedance (GMI) effect. The system employs a pair of performance-matched GMI sensing elements configured as a…

We theoretically investigated a method to detect a single skyrmion in a magnetic tunneling junction (MTJ) geometry. Using the tunneling Hamiltonian approach, we calculated the tunneling magnetoresistance (TMR) ratio of the…

The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs) was calculated in range of the quantum-ballistic model. The simulation was performed for electron tunneling through the insulating…

Here we demonstrate that both, tunnel magneto resistance (TMR) and resistive switching (RS), can be observed simultaneously in nano-scale magnetic tunnel junctions. The devices show bipolar RS of 6 % and TMR ratios of about 100 %. For each…

The tunneling magnetoresistance (TMR) of a hexagonal array of dipolar coupled anisotropic magnetic nanoparticles is studied using a resistor network model and a realistic micromagnetic configuration obtained by Monte Carlo simulations.…

Perpendicular magnetic tunnel junctions (MTJ) with a bottom pinned reference layer and a composite free layer (FL) are investigated. Different thicknesses of the FL were tested to obtain an optimal balance between tunneling…

Micromagnetic sensors play a major role towards the miniaturization in the industrial society. The adoption of new and emerging sensor technologies like anisotropic magnetoresistance (AMR), giant magnetoresistance (GMR) and tunnel…

Being nonlinear dynamic systems, magnetic read sensors should respond to an excitation signal of a frequency considerably different from their natural ferromagnetic resonance (FMR) frequencies. Because of the magnetization dynamics'…

Flexible electronics is an emerging field in many applications ranging from in vivo biomedical devices to wearable smart systems. The capability of conforming to curved surfaces opens the door to add electronic components to miniaturized…

In the development of any type of magnetic field sensor based on magnetic films, special consideration must be given to the magnetic layer component. The presented work investigates the use of flux closing magnetostrictive multilayers for…

Magnetic tunnel junctions (MTJs) have been widely applied in spintronic devices for efficient spin detection through the imbalance of spin polarization at the Fermi level. The van der Waals (vdW) nature of two-dimensional (2D) magnets with…

Magnetic tunnel junctions (MTJs) are key components of spintronic devices, such as magnetic random-access memories. Normally, MTJs consist of two ferromagnetic (FM) electrodes separated by an insulating barrier layer. Their key functional…