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相关论文: Transport Properties in Gapped Bilayer Graphene

200 篇论文

The electronic properties of graphene superlattices have attracted intense interest that was further stimulated by the recent observation of novel many-body states at "magic" angles in twisted bilayer graphene (BLG). For very small…

We study the superlattice minibands produced by the interplay between moir\'e pattern induced by hexagonal BN substrate on graphene layer and the interlayer coupling in bilayer graphene with Bernal stacking (BLG). We compare moir\'e…

介观与纳米尺度物理 · 物理学 2013-11-20 M. Mucha-Kruczynski , J. Wallbank , V. I. Fal'ko

We have utilized the finite-difference approach to explore electron-tunneling properties in gapped graphene through various electrostatic-potential barriers changing from Gaussian to a triangular envelope function in comparison with a…

介观与纳米尺度物理 · 物理学 2021-10-27 Farhana Anwar , Andrii Iurov , Danhong Huang , Godfrey Gumbs , Ashwani Sharma

The optical conductivities of graphene layers are strongly dependent on their stacking orders. Our first-principle calculations show that while the optical conductivities of single layer graphene (SLG) and bilayer graphene (BLG) with Bernal…

We investigate the quantum tunneling of electrons in an AA-stacked bilayer graphene (BLG) $n$-$p$ junction and $n$-$p$-$n$ junction. We show that Klein tunneling of an electron can occur in this system. The quasiparticles are not only…

介观与纳米尺度物理 · 物理学 2013-12-04 Matthew Sanderson , Yee Sin Ang , Chao Zhang

We investigate the transport properties of double-gated bilayer graphene nanoribbons at room temperature. The devices were fabricated using conventional CMOS-compatible processes. By analyzing the dependence of the resistance at the charge…

介观与纳米尺度物理 · 物理学 2015-05-18 Bartholomaeus N. Szafranek , Daniel Schall , Martin Otto , Daniel Neumaier , Heinrich Kurz

A conversion of AA- to AB-stacking bilayer graphene (BLG) due to interlayer interaction is demonstrated. Two types of interlayer interactions, an attractive and a repulsive, between the Boron and Nitrogen dopant atoms in BLG are found. In…

介观与纳米尺度物理 · 物理学 2022-04-05 Nzar Rauf Abdullah , Hunar Omar Rashid , Chi-Shung Tang , Andrei Manolescu , Vidar Gudmundsson

We report the experimental observation of Fabry-P\'erot (FP) interference in the conductance of a gate-defined cavity in a dual-gated bilayer graphene (BLG) device. The high quality of the BLG flake, combined with the device's electrical…

We investigated a suspended bilayer graphene where the bottom (top) layer is doped by boron (nitrogen) substitutional atoms by using Density Functional Theory (DFT) calculations. We found that at high dopant concentration (one B-N pair…

材料科学 · 物理学 2016-05-25 Daniele Giofré , Davide Ceresoli , Mario I. Trioni

We present a detailed numerical study of the electronic transport properties of bilayer and trilayer graphene within a framework of single-electron tight-binding model. Various types of disorder are considered, such as resonant (hydrogen)…

介观与纳米尺度物理 · 物理学 2011-01-04 Shengjun Yuan , Hans De Raedt , Mikhail I. Katsnelson

We investigate electronic transport in twisted bilayer graphene (tBLG) under variable temperatures ($T$), carrier densities ($n$), and transverse magnetic fields, focusing on samples with small-twist-angles ($\theta$). These samples show…

介观与纳米尺度物理 · 物理学 2018-08-24 Ting-Fung Chung , Yang Xu , Yong P. Chen

In this paper, the effects of the external transverse magnetic field $B$ (perpendicular to the surface of the layers) on the electronic and excitonic properties are studied in the AA-stacked bilayer graphene (BLG). The effects of the…

强关联电子 · 物理学 2022-05-19 V. Apinyan , T. K. Kopec

We present transport measurements on a bilayer graphene sheet with homogeneous back gate and split top gate. The electronic transport data indicates the capability to direct electron flow through graphene nanostructures purely defined by…

介观与纳米尺度物理 · 物理学 2012-10-10 S. Dröscher , C. Barraud , K. Watanabe , T. Taniguchi , T. Ihn , K. Ensslin

Bilayer graphene (BLG) possesses a finite bandgap when a potential difference is introduced between the two graphene layers. The potential difference is known to be introduced by surface charge transfer. Thus, it is expected that a finite…

材料科学 · 物理学 2014-12-04 Ryo Nouchi

We demonstrate that the one-dimensional (1D) transport channels that appear in the gap when graphene nanoroads are embedded in boron-nitride (BN) sheets are more robust when they are inserted at AB/BA grain boundaries. Our conclusions are…

介观与纳米尺度物理 · 物理学 2012-06-22 Jeil Jung , Zhenhua Qiao , Qian Niu , Allan H. MacDonald

By means of atomistic tight-binding calculations, we investigate the transport properties of vertical devices made of two incommensurately misoriented graphene layers. With a chosen transport direction (Ox-axis), we define two classes of…

介观与纳米尺度物理 · 物理学 2015-12-23 Viet Hung Nguyen , Philippe Dollfus

We theoretically study the transport properties of both monolayer and bilayer graphene in the presence of electron-hole puddles induced by charged impurities which are invariably present in the graphene environment. We calculate the…

介观与纳米尺度物理 · 物理学 2011-09-28 Qiuzi Li , E. H. Hwang , S. Das Sarma

We consider the conductance of a normal-superconductor junction in bilayer graphene in the framework of the Dirac-Bogoliubov-De-Gennes equation. A remarkable suppression of the conductance at voltages just below the superconducting gap is…

介观与纳米尺度物理 · 物理学 2009-11-13 T. Ludwig

The effect of a randomly fluctuating gap, created by a random staggered potential, is studied in a monolayer and a bilayer of graphene. The density of states, the one-particle scattering rate and transport properties (diffusion coefficient…

介观与纳米尺度物理 · 物理学 2009-03-24 K. Ziegler

Graphene, as an atomic-thick ultrasoft membrane, almost has no resistance against out-of-plane deformations and, therefore, it is always wrinkled to a certain degree. Recently, corrugated structures and their effects on the electronic…

介观与纳米尺度物理 · 物理学 2016-09-13 Si-Yu Li , Hua Jiang , Jiao-Jiao Zhou , Haiwen Liu , Fan Zhang , Lin He