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Motived by experimentally synthesized $\mathrm{MoSi_2N_4}$ (\textcolor[rgb]{0.00,0.00,1.00}{Science 369, 670-674 (2020})), the intrinsic piezoelectricity in monolayer $\mathrm{XSi_2N_4}$ (X=Ti, Zr, Hf, Cr, Mo and W) are studied by density…

材料科学 · 物理学 2021-01-01 San-Dong Guo , Yu-Tong Zhu , Wen-Qi Mu

Motivated by the fact that septuple-atomic-layer MnBi$_2$Te$_4$ can be structurally viewed as the combination of double-atomic-layer MnTe intercalating into quintuple-atomic-layer Bi$_2$Te$_3$, we present a general approach of constructing…

The recent synthesis of MoSi2N4 material, along with theoretical predictions encompassing the entire family of chemical analogs, has opened up a new array of low-dimensional materials for a diverse range of optoelectronics and photovoltaics…

材料科学 · 物理学 2023-09-21 Muhammad Sufyan Ramzan , Tomasz Woźniak , Agnieszka Kuc , Caterina Cocchi

We predict enormous piezoelectric effects in intrinsic monolayer group IV monochalcogenides (MX, M=Sn or Ge, X=Se or S), including SnSe, SnS, GeSe and GeS. Using first-principle simulations based on the modern theory of polarization, we…

材料科学 · 物理学 2015-11-05 Ruixiang Fei , Wenbin Li , Ju Li , Li Yang

Piezoelectricity appears in the inversion asymmetric crystal that converts mechanical deformational force to electricity. Two-dimensional transition metal dichalcolgenide (TMDC) monolayers exhibit the piezoelectric effect due to the…

应用物理 · 物理学 2019-12-13 Sheng Yu , Quinton Rice , Tikaram Neupane , Bagher Tabibi , Felix Jaetae Seo

Chemical vapor deposition has been most recently employed to fabricate centimeter-scale high-quality single-layer MoSi2N4 (Science; 2020;369; 670). Motivated by this exciting experimental advance, herein we conduct extensive…

We find that several layer-phase group-III monochalcogenides, including GaS, GaSe and InSe, are piezoelectric in the monolayer form. First-principles calculations reveal that the piezoelectric coefficients of monolayer GaS, GaSe and InSe…

材料科学 · 物理学 2016-01-22 Wenbin Li , Ju Li

Very recently, a new type of two-dimensional layered material MoSi2N4 has been fabricated, which is semiconducting with weak interlayer interaction, high strength, and excellent stability. We systematically investigate theoretically the…

材料科学 · 物理学 2021-02-24 Hongxia Zhong , Wenqi Xiong , Pengfei Lv , Jin Yu , Shengjun Yuan

Two-dimensional heterostructure of WSe2/MoS2 atomic layers has unique piezoelectric characteristics which depends on the number of atomic layer, stacking type, and interlayer interaction size. The van der Waals heterostructure of p- and…

介观与纳米尺度物理 · 物理学 2019-12-13 Sheng Yu , Tikaram Neupane , Dulitha Jayakodige , Zhuo Yang

The septuple-atomic-layer $\mathrm{VSi_2P_4}$ with the same structure of experimentally synthesized $\mathrm{MoSi_2N_4}$ is predicted to be a spin-gapless semiconductor (SGS). In this work, the biaxial strain is applied to tune electronic…

材料科学 · 物理学 2021-02-03 San-Dong Guo , Wen-Qi Mu , Yu-Tong Zhu , Xing-Qiu Chen

The advancement of two-dimensional polar metals tends to be limited by the incompatibility between electric polarity and metallicity as well as dimension reduction. Here, we report polar and metallic Janus monolayers of MoSi$_2$N$_4$ family…

材料科学 · 物理学 2023-06-13 Yan Yin , Qihua Gong , Min Yi , Wanlin Guo

We investigated the interlayer coupling effect in homobilayer structures of MSi2X4 with M = Mo/W and X = N/P/As. Through the combination of first-principles calculations and analytical formulations, the equilibrium interlayer distance,…

材料科学 · 物理学 2024-10-08 Qian Wang , Na Zhang , Hongyi Yu

The electronic properties of a field-effect transistor with two different structures of MoSi$_2$N$_4$ and WSi$_2$N$_4$ monolayers as the channel material in the presence of biaxial strain are investigated. The band structures show that…

材料科学 · 物理学 2022-06-09 Nayereh Ghobadi , Manouchehr Hosseini , Shoeib Babaee Touski

Based on first-principles calculations, we have investigated the structural stability, electronic structures, and thermal properties of the monolayer XSi2N4 (X= Ti, Mo, W) and their lateral (LH) and vertical heterostructures (VH). We find…

材料科学 · 物理学 2022-03-29 Ghulam Hussain , Mazia Asghar , Muhammad Waqas Iqbal , Hamid Ullah , Carmine Autieri

Recent experimental synthesis of ambient-stable MoSi2N4 monolayer have garnered enormous research interests. The intercalation morphology of MoSi2N4 - composed of a transition metal nitride (Mo-N) inner sub-monolayer sandwiched by two…

Experimentally synthesized $\mathrm{MoSi_2N_4}$ (\textcolor[rgb]{0.00,0.00,1.00}{Science 369, 670-674 (2020)}) is a piezoelectric semiconductor. Here, we systematically study the large biaxial (isotropic) strain effects (0.90 to 1.10) on…

材料科学 · 物理学 2021-01-15 Xiao-Shu Guo , San-Dong Guo

Metal contacts to two-dimensional (2D) semiconductors are ubiquitous in modern electronic and optoelectronic devices. Such contacts are, however, often plagued by strong Fermi level pinning (FLP) effect which reduces the tunability of the…

Janus two-dimensional (2D) materials have attracted much attention due to possessing unique properties caused by their out-of-plane asymmetry, which have been achieved in many 2D families. In this work, the Janus monolayers are predicted in…

材料科学 · 物理学 2021-01-15 San-Dong Guo , Wen-Qi Mu , Yu-Tong Zhu , Ru-Yue Han , Wen-Cai Ren

Very recently, the two-dimensional (2D) form of MoSi2N4 has been successfully fabricated [Hong et al., Sci. 369, 670 (2020)]. Motivated by theses recent experimental results, herein we investigate the structural, mechanical, thermal,…

Piezoelectricity offers precise and robust conversion between electricity and mechanical force. Here we report the first experimental evidence of piezoelectricity in a single layer of molybdenum disulfide (MoS2) crystal as a result of…

材料科学 · 物理学 2014-09-01 Hanyu Zhu , Yuan Wang , Jun Xiao , Ming Liu , Shaomin Xiong , Zi Jing Wong , Ziliang Ye , Xiaobo Yin , Xiang Zhang
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