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We present a theoretical investigation of the voltage-driven metal insulator transition based on solving coupled Boltzmann and Hartree-Fock equations to determine the insulating gap and the electron distribution in a model system -- a one…

强关联电子 · 物理学 2018-12-03 Giuliano Chiriacò , Andrew J. Millis

A systematic method of calculating the dynamical conductivity tensor in a general multiband electronic model with strong boson-mediated electron-electron interactions is described. The theory is based on the exact semiclassical expression…

强关联电子 · 物理学 2013-03-13 I. Kupcic , Z. Rukelj , S. Barisic

We study the electronic spectral properties in two examples of strongly interacting systems: a Mott-Hubbard insulator with additional electron-boson interactions, and a polaronic semiconductor. An approximate unified framework is developed…

强关联电子 · 物理学 2009-11-11 S. Fratini , S. Ciuchi

Based on an invariant embedding principle for the backscattering function we calculate the electron emission yield for metal surfaces at very low electron impact energies. Solving the embedding equation within a quasi-isotropic…

材料科学 · 物理学 2022-04-06 F. X. Bronold , H. Fehske

Many computational models have been developed to predict the rates of atomic displacements in two-dimensional (2D) materials under electron beam irradiation. However, these models often drastically underestimate the displacement rates in 2D…

An analysis of Luttinger's theorem shows that -- contrary to recent claims -- it is not valid for a generic Mott insulator. For a two-orbital Hubbard model with two electrons per site the crossover from a non-magnetic correlated insulating…

强关联电子 · 物理学 2009-11-11 A. Rosch

We present systematic theoretical results on thermoelectric effects in semimetals based on the variational method of the linearized Boltzmann equation. Inelastic electron-hole scattering is known to play an important role in the unusual…

强关联电子 · 物理学 2023-03-31 Keigo Takahashi , Hiroyasu Matsuura , Hideaki Maebashi , Masao Ogata

We show that doped Mott insulators exhibit a collective degree of freedom, not made out of the elemental excitations, because the number of single-particle addition states at low energy per electron per spin is greater than one. The…

强关联电子 · 物理学 2008-05-30 Philip Phillips , Ting-Pong Choy , Robert G. Leigh

We use the dynamical mean field method to investigate electronic properties of heterostructures in which finite number of Mott-insulator layers are embedded in a spatially infinite band-insulator. The evolution of the correlation effects…

强关联电子 · 物理学 2009-11-10 Satoshi Okamoto , Andrew J. Millis

We calculate the electronic transport properties of a system which is irradiated by a homogeneous microwave field. Within a Boltzmann equation approach, a general expression for the conductivity tensor is derived and evaluated for a quasi…

凝聚态物理 · 物理学 2009-10-28 Tobias Brandes

We employ a field-theoretical approach to analyze the Bose-Hubbard model on a lattice, with a focus on the low-energy properties across the Mott insulator (MI) to superfluid (SF) transition. Prior approaches approximated the partition…

量子气体 · 物理学 2025-05-08 Idan S. Wallerstein , Eytan Grosfeld

We present a theoretical treatment of the surprisingly large damping observed recently in one-dimensional Bose-Einstein atomic condensates in optical lattices. We show that time-dependent Hartree-Fock-Bogoliubov (HFB) calculations can…

其他凝聚态物理 · 物理学 2009-11-10 Julio Gea-Banacloche , Ana Maria Rey , Guido Pupillo , Carl J. Williams , Charles W. Clark

The Mott transition in a multi-orbital Hubbard model involving subbands of different widths is studied within the dynamical mean field theory. Using the iterated perturbation theory for the quantum impurity problem it is shown that at low…

强关联电子 · 物理学 2009-11-10 A. Liebsch

Recent neutron scattering experiments on V2O3 show that the magnetic fluctuations on the metallic side of the antiferromagnetic metal-insulator transition are not related to the spin structure of the insulator, but rather to the…

强关联电子 · 物理学 2016-08-31 T. Wolenski , M. Grodzicki , J. Appel

The anisotropic two-orbital Hubbard model is investigated at low temperatures using high-precision quantum Monte Carlo (QMC) simulations within dynamical mean-field theory (DMFT). We demonstrate that two distinct orbital-selective Mott…

强关联电子 · 物理学 2015-06-25 N. Blümer , C. Knecht , K. Pozgajcic , P. G. J. van Dongen

Hall and optical conductivity experiments on the cuprates indicate that the low-energy fermionic degrees of freedom in a doped Mott insulator posess a component that is dynamcially generated and hence determined by the temperature. We show…

强关联电子 · 物理学 2013-05-29 Shiladitya Chakraborty , Seungmin Hong , Philip Phillips

We consider the interaction-driven Mott transition at zero temperature from the viewpoint of microscopic Fermi liquid theory. To this end, we derive an exact expression for the Landau parameters within the dynamical mean-field theory (DMFT)…

We study the Hubbard model at half band-filling on a Bethe lattice with infinite coordination number in the paramagnetic insulating phase at zero temperature. We use the dynamical mean-field theory (DMFT) mapping to a single-impurity…

强关联电子 · 物理学 2009-11-10 Satoshi Nishimoto , Florian Gebhard , Eric Jeckelmann

The iterative perturbation theory of the dynamical mean field theory is generalized to arbitrary electron occupation in case of multi-orbital Hubbard bands. We present numerical results of doubly degenerate Eg bands in a simple cubic…

强关联电子 · 物理学 2007-12-06 Takeo Fujiwara , Susumu Yamamoto , Yasushi Ishii

The quadratic low-temperature dependence of resistance in ordinary metals is determined by the momentum relaxation due to electron-electron scattering in the presence Umklapp processes and scattering on impurities. In metals without…

强关联电子 · 物理学 2021-05-12 V. P. Mineev