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Superconducting boron doped silicon is a promising material for integrated silicon quantum devices. In particular, its low electronic density and moderate disorder make it a suitable candidate for the fabrication of large inductances with…

超导电性 · 物理学 2021-06-25 P. Bonnet , F. Chiodi , D. Flanigan , R. Delagrange , N. Brochu , D. Débarre , H. le Sueur

Stripe phases are observed experimentally in several copper-based high-Tc superconductors near 1/8 hole doping. However, the specific characteristics may vary depending on the degree of dopant disorder and the presence or absence of a low-…

超导电性 · 物理学 2013-08-23 Markus Schmid , Florian Loder , Arno P. Kampf , Thilo Kopp

The resistance of a homogeneous semiconductor increases quadratically with magnetic field at low fields and, except in very special cases, saturates at fields much larger than the inverse of the carrier mobility, a number typically of order…

凝聚态物理 · 物理学 2009-11-10 M. M. Parish , P. B. Littlewood

A study of impedance spectroscopy was done for the electrical characterization of pyrochlore materials. The experiment consisted of measurements of the dependence of the impedance of such systems with the temperature during heating (25 to…

The superconducting properties of a recently proposed phenomenological model for a weakly doped antiferromagnet are analyzed, taking into account fluctuations of the phase of the order parameter. In this model, we assume that the doped…

超导电性 · 物理学 2009-11-11 V. M. Loktev , V. M. Turkowski

The spectral breadth of conjugated polymers gives these materials a clear advantage over other molecular compounds for organic photovoltaic applications and is a key factor in recent efficiencies topping 10%. But why do excitonic…

We calculate the optical and DC conductivity for half-filled disordered Hubbard model near the Mott metal-insulator transition. As in the clean case, large metallic resistivity is driven by a strong inelastic scattering, and Drude-like peak…

强关联电子 · 物理学 2010-03-01 Milos M. Radonjic , D. Tanaskovic , V. Dobrosavljevic , K. Haule

The sheet resistance Rs of Ar+ irradiated SrTiO3 in patterns with a length scale of several microns increases significantly below 40 K in connection with driving currents exceeding a certain threshold. The initial lower Rs is recovered upon…

In this paper we report the comparative study of superconductivity by 3d (Co), 4d (Rh), 5d (Ir) element doping in SmFeAsO. X-ray diffraction patterns indicate that the material has formed the ZrCuSiAs-type structure with a space group…

超导电性 · 物理学 2010-04-22 Yanpeng Qi , Lei Wang , Zhaoshun Gao , Dongliang Wang , Xianping Zhang , Zhiyu Zhang , Yanwei Ma

The trap distribution in the conjugated polymer poly(3-hexylthiophene) was investigated by fractional thermally stimulated current measurements. Two defect states with activation energies of about 50 meV and 105 meV and Gaussian energy…

材料科学 · 物理学 2008-10-21 Julia Schafferhans , Andreas Baumann , Carsten Deibel , Vladimir Dyakonov

The effect of ambient disorders and sequence heterogeneities on the reptation of a long polymer is studied with the aid of a disordered tube model. The dynamics of a random heteropolymer is found to be much slower than that of a homopolymer…

软凝聚态物质 · 物理学 2009-10-30 D. Cule , T. Hwa

The current-dipole conductivity formula for doped three-dimensional Dirac semimetals is derived by using a modified gauge-invariant tight-binding approach. In a heavily doped regime, the effective number of charge carriers $n_{\alpha…

介观与纳米尺度物理 · 物理学 2023-10-17 I. Kupčić , J. Kordić

Infrared reflectance measurements were made with light polarized along the a- and c-axis of both superconducting and antiferromagnetic phases of electron doped Nd$_{1.85}$Ce$_{.15}$CuO$_{4+\delta}$. The results are compared to…

超导电性 · 物理学 2009-11-07 E. J. Singley , D. N. Basov , K. Kurahashi , T. Uefuji , K. Yamada

Semiconductors are currently an active topic of study due to the endless range of applications in electronic hardware and computer engineering. In this experiment, the material properties (i.e. resistivity $\rho$, Hall coefficient $R_{H}$,…

材料科学 · 物理学 2023-12-12 James Paolo Rili

Finite-difference time-domain method is employed to investigate the optical properties of semiconductor thin films patterned with circular holes. The presence of holes enhances the coupling of the incident plane wave with the thin film and…

介观与纳米尺度物理 · 物理学 2013-12-06 Minhan Lou , Hua Bao , Changying Zhao

Three dimensional topological insulators are bulk insulators with $\mathbf{Z}_2$ topological electronic order that gives rise to conducting light-like surface states. These surface electrons are exceptionally resistant to localization by…

介观与纳米尺度物理 · 物理学 2017-03-07 Yishuai Xu , Janet Chiu , Lin Miao , Haowei He , Zhanybek Alpichshev , A. Kapitulnik , Rudro R. Biswas , L. Andrew Wray

A resonant inelastic x-ray scattering study of the electronic structure of the semiconductor cuprous oxide, $\rm Cu_2O$, is reported. When the incident x-ray energy is tuned to the Cu K-absorption edge, large enhancements of the spectral…

材料科学 · 物理学 2012-06-18 Young-June Kim , J. P. Hill , H. Yamaguchi , T. Gog , D. Casa

We analyze the linear absorption spectrum of regioregular poly(3-hexylthiophene) films spun from a variety of solvents to probe directly the film microstructure and how it depends on processing conditions. We estimate the exciton bandwidth…

材料科学 · 物理学 2010-04-30 Jenny Clark , Jui-Fen Chang , Frank C. Spano , Richard H. Friend , Carlos Silva

Organic semiconductors have enough molecular versatility to feature chemo-specific electrical sensitivity to large families of chemical substituents via different intermolecular bonding modes. This study demonstrates that one single…

应用物理 · 物理学 2021-07-28 Aicha Boujnah , Aimen Boubaker , Adel Kalboussi , Kamal Lmimouni , Sebastien Pecqueur

A thin superconducting disk, with radius $R=4\xi$ and height $H=\xi$, is studied in the presence of an applied magnetic field parallel to its major axis. We study how the boundaries influence the decay of the order parameter near the edges…

超导电性 · 物理学 2007-06-09 Antonio R. de C. Romaguera , Mauro M. Doria , F. M. Peeters