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相关论文: Magnetoexcitons in transition-metal dichalcogenide…

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Two-dimensional (2D) transition-metal dichalcogenide (TMD) MX$_2$ (M = Mo, W; X= S, Se, Te) possess unique properties and novel applications. In this work, we perform first-principles calculations on the van der Waals (vdW) stacked MX$_2$…

Semiconductor heterostructures are the fundamental platform for many important device applications such as lasers, light-emitting diodes, solar cells and high-electron-mobility transistors. Analogous to traditional heterostructures, layered…

Interlayer excitons (IXs), composed of electron and hole states localized in different layers, excel in bilayers composed of atomically thin van der Waals materials such as semiconducting transition metal dichalcogenides (TMDs) due to…

介观与纳米尺度物理 · 物理学 2024-07-16 Mauro Brotons-Gisbert , Brian D. Gerardot , Alexander W. Holleitner , Ursula Wurstbauer

We theoretically investigate the magneto-optical (MO) properties of monolayer (ML) transition metal dichalcogenides (TMDs) in the presence of external electrical and quantizing magnetic fields and of the proximity-induced exchange…

介观与纳米尺度物理 · 物理学 2024-11-05 Y. Li , Y. M. Xiao , W. Xu , L. Ding , M. V. Milošević , F. M. Peeters

We theoretically investigated the coupling between the exciton internal and center-of-mass motions in monolayer transition metal dichalcogenides subjected to a periodic electrostatic potential. The coupling leads to the emergence of…

介观与纳米尺度物理 · 物理学 2024-04-16 Fujia Lu , Qianying Hu , Yang Xu , Hongyi Yu

We present a comprehensive theoretical analysis of composite excitonic states in doped transition-metal dichalcogenide monolayers. Making use of the pair distribution function, we introduce a method to include the effect of screening in the…

介观与纳米尺度物理 · 物理学 2022-02-22 Dinh Van Tuan , Hanan Dery

Monolayer transition metal dichalcogenides (1L-TMDs) have tremendous potential as atomically thin, direct bandgap semiconductors that can be used as convenient building blocks for quantum photonic devices. However, the short exciton…

The multivalley band structure of monolayer transition metal dichalcogenides (TMDs) gives rise to intravalley and intervalley excitons. Much knowledge of these excitons has been gained, but fundamental questions remain, such as how to…

介观与纳米尺度物理 · 物理学 2021-12-08 Ngoc-Cam Hoang , Thanh-Phuc Nguyen , Vladimir A. Osipov

Monolayer transition metal dichalcogenides host a variety of optically excited quasiparticles species that stem from two-dimensional confinement combined with relatively large carrier effective masses and reduced dielectric screening. The…

We develop a systematic theory for excitons subject to Fermi-Hubbard physics in moir\'e twisted transition metal dichalcogenides (TMDs). Specifically, we consider excitons in moir\'e systems for which the valence band is in the…

强关联电子 · 物理学 2023-06-07 T. -S. Huang , Yang-Zhi Chou , C. L. Baldwin , Fengcheng Wu , Mohammad Hafezi

We report 65 tesla magneto-absorption spectroscopy of exciton Rydberg states in the archetypal monolayer semiconductor WSe$_2$. The strongly field-dependent and distinct energy shifts of the 2s, 3s, and 4s excited neutral excitons permits…

介观与纳米尺度物理 · 物理学 2018-02-07 Andreas V. Stier , Nathan P. Wilson , Kirill A. Velizhanin , Junichiro Kono , Xiaodong Xu , Scott A. Crooker

Monolayer Transition Metal Dichalcogenides (TMDCs) are promising candidates for quantum technologies, such as quantum dots, because they are truly two-dimensional semiconductors with a direct band gap. In this work, we analyse theoretically…

介观与纳米尺度物理 · 物理学 2018-02-28 Alessandro David , Guido Burkard , Andor Kormányos

The ability to control the properties of twisted bilayer transition metal dichalcogenides in situ makes them an ideal platform for investigating the interplay of strong correlations and geometric frustration. Of particular interest are the…

The recent proposal of using an anisotropic vacuum for generating valley coherence in transition metal dichalcogenide (TMDC) monolayers has expanded the potential of such valley degrees of freedom for applications in valleytronics. In this…

光学 · 物理学 2020-10-28 Mandar Sohoni , Pankaj K. Jha , Muralidhar Nalabothula , Anshuman Kumar

Transition metal dichalcogenides (TMDs) are two-dimensional (2D) materials with remarkable electrical, optical and chemical properties. One promising strategy to tailor TMD properties of TMDs is to create alloys through dopant-induced…

材料科学 · 物理学 2023-05-24 Mengqi Fang , Eui-Hyeok Yang

Monolayer transition-metal dichalcogenides are direct gap semiconductors with great promise for optoelectronic devices. Although spatial correlation of electrons and holes plays a key role, there is little experimental information on such…

材料科学 · 物理学 2015-06-23 A. T. Hanbicki , M. Currie , G. Kioseoglou , A. L. Friedman , B. T. Jonker

Moir\'{e} superlattices in transition metal dichalcogenides (TMDs) heterobilayers exhibit various correlated insulating states driven by long-range Coulomb interactions, and these states crucially alter exciton resonances, particularly at…

材料科学 · 物理学 2025-11-04 Junghwan Kim , Dinh Van Tuan , Hanan Dery

A self-consistent scheme for the calculations of the interacting groundstate and the near bandgap optical spectra of mono- and multilayer transition-metal-dichalcogenide systems is presented. The approach combines a dielectric model for the…

介观与纳米尺度物理 · 物理学 2018-01-24 Lars Meckbach , Tineke Stroucken , Stephan W. Koch

Twisted bilayer transition metal dichalcogenides have emerged as important model systems for the investigation of correlated electron physics because their interaction strength, carrier concentration, band structure, and inversion symmetry…

强关联电子 · 物理学 2021-09-01 Jiawei Zang , Jie Wang , Jennifer Cano , Andrew J. Millis

We apply a multiscale modeling approach to study lattice reconstruction in marginally twisted bilayers of transition metal dichalcogenides (TMD). For this, we develop DFT-parametrized interpolation formulae for interlayer adhesion energies…

介观与纳米尺度物理 · 物理学 2020-05-21 V. V. Enaldiev , V. Zólyomi , C. Yelgel , S. J. Magorrian , V. I. Fal'ko
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