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We present a general method to analyze the topological nature of the domain boundary connectivity that appeared in relaxed moir\'e superlattice patterns at the interface of 2-dimensional (2D) van der Waals (vdW) materials. At large enough…

A periodic spatial modulation, as created by a moir\'e pattern, has been extensively studied with the view to engineer and tune the properties of graphene. Graphene encapsulated by hexagonal boron nitride (hBN) when slightly misaligned with…

介观与纳米尺度物理 · 物理学 2020-01-31 M. Anđelković , S. P. Milovanović , L. Covaci , F. M. Peeters

The study of moir\'e engineering started with the advent of van der Waals heterostructures in which stacking two-dimensional layers with different lattice constants leads to a moir\'e pattern controlling their electronic properties. The…

介观与纳米尺度物理 · 物理学 2023-08-28 F. Mesple , N. R. Walet , G. Trambly de Laissardière , F. Guinea , D. Dosenovic , H. Okuno , C. Paillet , A. Michon , C. Chapelier , V. T. Renard

Topological phases of matter span a wide area of research shaping fundamental pursuits and offering promise for future applications. While a significant fraction of topological materials has been characterized using symmetry requirements of…

介观与纳米尺度物理 · 物理学 2024-02-08 Robert-Jan Slager , Adrien Bouhon , F. Nur Ünal

It has been recently established that optoelectronic and non-linear transport experiments can give direct access to the dipole moment of the Berry curvature in non-magnetic and non-centrosymmetric materials. Thus far, non-vanishing Berry…

介观与纳米尺度物理 · 物理学 2019-11-22 Raffaele Battilomo , Niccolo' Scopigno , Carmine Ortix

When combined into van der Waals heterostructures, transition metal dichalcogenide monolayers enable the exploration of novel physics beyond their unique individual properties. However, for interesting phenomena such as interlayer charge…

We analyze the electron dynamics in corrugated layers of transition-metal dichalcogenides. Due to the strong spin-orbit coupling, the intrinsic (Gaussian) curvature leads to an emergent gauge field associated with the Berry connection of…

介观与纳米尺度物理 · 物理学 2017-01-18 Hector Ochoa , Ricardo Zarzuela , Yaroslav Tserkovnyak

Layer-polarized anomalous Hall effect (LP-AHE), derived from the coupling between Berry curvature and layer degree of freedom, is of importance for both fundamental physics and device applications. Nonetheless, the current research paradigm…

材料科学 · 物理学 2022-06-24 Ting Zhang , Xilong Xu , Baibiao Huang , Ying Dai , Liangzhi Kou , Yandong Ma

Homogeneous in-plane biaxial tensile strain strengthens the out-of-plane van der Waals interaction in \MoS\ bilayers (BLs) and can be used to fine-tune their terahertz (THz) oscillations. Using ultralow-frequency Raman spectroscopy on…

材料科学 · 物理学 2026-02-13 S. Patel , Jose D. Mella , S. Puri , Salvador Barraza-Lopez , H. Nakamura

Motivated by the recent experimental developments in van der Waals heterostructures, we investigate the emergent magnetism in Mott insulator - semimetal moir\'e superlattices by deriving effective spin models and exploring their phase…

强关联电子 · 物理学 2024-11-05 M. A. Keskiner , Pouyan Ghaemi , M. Ö. Oktel , Onur Erten

Interfacial ferroelectricity emerges in heterostructures consisting of nonpolar van der Waals (vdW) layers, greatly expanding the scope of two dimensional ferroelectrics. In particular, the unconventional moire ferroelectricity observed in…

Electron motion in crystals is governed by the coupling between crystal momentum and internal degrees of freedom such as spin implicit in the band structure. The description of this coupling in terms of a momentum-dependent effective field…

介观与纳米尺度物理 · 物理学 2019-12-24 F. Couëdo , H. Irie , T. Akiho , K. Suzuki , K. Onomitsu , K. Muraki

We report deterministic control over moir\'e superlattice interference pattern in twisted bilayer graphene by implementing designable device-level heterostrain with process-induced strain engineering, a widely used technique in industrial…

To elucidate the origin of spin structure-driven anomalous Hall effect (AHE) in pyrochlore compounds, we construct the $t_{2g}$-orbital kagome lattice model and analyze the anomalous Hall conductivity (AHC). We reveal that a conduction…

强关联电子 · 物理学 2010-09-14 Takeshi Tomizawa , Hirhoshi Kontani

We have observed the Berry phase effect associated with interband coherence in topological surface states (TSSs) using two-color high-harmonic spectroscopy. This Berry phase accumulates along the evolution path of strong field-driven…

光学 · 物理学 2024-04-10 Ya Bai , Yang Jiang , Wenyang Zheng , Jiayin Chen , Shuo Wang , Candong Liu , Ruxin Li , Peng Liu

Elastic strain can displace the massless Dirac fermions in monolayer graphene in a space-dependent fashion, similar to the effect of an external magnetic field, thus giving rise to Landau quantization. We here show that the strain-induced…

介观与纳米尺度物理 · 物理学 2024-10-30 Tianyu Liu , Jun-Hong Li , Xingchuan Zhu , Huaiming Guo , Hai-Zhou Lu , X. C. Xie

We investigate the phase diagram of moir\'e double bilayer transition metal dichalcogenides with ABBA stacking as a function of twist angle and applied pressure. At hole filling $\nu = 2$ per moir\'e unit cell, the noninteracting system…

介观与纳米尺度物理 · 物理学 2026-02-02 Jan Biedermann , Lukas Janssen

Moire superlattices formed in van der Waals heterostructures due to twisting, lattice mismatch and strain present an opportunity for creating novel metamaterials with unique properties not present in the individual layers themselves.…

We study the effect of spatial modulations in the interlayer hopping of graphene bilayers, such as those that arise upon shearing or twisting. We show that their single-particle physics, characterized by charge accumulation and recurrent…

介观与纳米尺度物理 · 物理学 2012-05-24 Pablo San-Jose , Jose Gonzalez , Francisco Guinea

One intriguing fingerprint of surface states in topological insulators is the Aharonov-Bohm effect in magnetoconductivity of nanowires. We show that surface states in nanowires of Dirac materials (bismuth, bismuth antimony, and lead tin…

介观与纳米尺度物理 · 物理学 2017-03-10 V. V. Enaldiev , V. A. Volkov