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Nd$_{2-x}$Ce$_x$CuO$_{4\pm\delta}$ (NCCO) epitaxial thin films have been deposited on (100) SrTiO$_3$ substrates by DC sputtering technique in different atmosphere. The as-grown samples show different dependence of the in-plane resistivity…

We report magnetic measurements up to 1200 K on three different multi-walled carbon nanotube mat samples using Quantum Design vibrating sample magnetometers. Three different samples prepared from arc discharge or chemical vapor deposition…

超导电性 · 物理学 2007-05-23 Guo-meng Zhao , Pieder Beeli

We have studied the effect of magnetic field on a non-stoichiometric Heusler alloy Ni$_{50}$Mn$_{35}$In$_{15}$ that undergoes a martensitic as well as a magnetic transition near room temperature. Temperature dependent magnetization…

材料科学 · 物理学 2009-11-13 P. A. Bhobe , K. R. Priolkar , A. K. Nigam

Tunneling surface current through a thin ferromagnetic barrier in a three-dimensional topological insulator is shown to possess an extraordinary response to the orientation of barrier magnetization. In contrast to conventional…

强关联电子 · 物理学 2015-05-27 B. D. Kong , Y. G. Semenov , C. Krowne , K. W. Kim

We use the thickness of Cu layers to control all-optical switching of magnetization in adjacent Gd$_{24}$(Fe$_9$0Co$_{10}$)$_{76}$ films. While increasing the Cu thickness from 5 to 900nm has no effect on the switching threshold, it…

The material dependence of hot electron magnetotransport in a spin-valve transistor has been theoretically explored. We calculate the parallel and anti-parallel collector current changing the types and relative spin orientation of the…

凝聚态物理 · 物理学 2007-05-23 Jisang Hong

The temperature-driven reorientation transition which, up to now, has been studied by use of Heisenberg-type models only, is investigated within an itinerant-electron model. We consider the Hubbard model for a thin fcc(100) film together…

强关联电子 · 物理学 2009-10-31 T. Herrmann , M. Potthoff , W. Nolting

Thermoelectric effects in magnetic nanostructures and the so-called spin caloritronics are attracting much interest. Indeed it provides a new way to control and manipulate spin currents which are key elements of spin-based electronics. Here…

We report a systematic study of current-induced perpendicular magnetization switching in W/Co$_{x}$Tb$_{1-x}$/Al thin films with strong perpendicular magnetic anisotropy. Various Co$_{x}$Tb$_{1-x}$ ferrimagnetic alloys with different…

We report a study of the low-temperature heat transport in the quasi-one-dimensional S = 1/2 alternating antiferromagnetic-ferromagnetic chain compound (CH_{3})_{2}NH_{2}CuCl_{3}. Both the temperature and magnetic-field dependencies of…

强关联电子 · 物理学 2011-10-20 L. M. Chen , X. M. Wang , W. P. Ke , Z. Y. Zhao , X. G. Liu , C. Fan , Q. J. Li , X. Zhao , X. F. Sun

Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast switching speeds and robustness against magnetic fields. Different device concepts have been predicted and experimentally demonstrated, such as…

The temperature dependence of a system exhibiting a `metal-insulator transition in two dimensions at zero magnetic field' (MIT) is studied up to 90K. Using a classical scattering model we are able to simulate the non-monotonic temperature…

强关联电子 · 物理学 2015-06-24 V. Senz , T. Ihn , T. Heinzel , K. Ensslin , G. Dehlinger , D. Grützmacher , U. Gennser , E. H. Hwang , S. Das Sarma

Two-dimensional magnets could potentially revolutionize information technology, but their potential application to cooling technology and magnetocaloric effect (MCE) in a material down to the monolayer limit remain unexplored. Herein, we…

材料科学 · 物理学 2023-03-29 Weiwei He , Yan Yin , Qihua Gong , Richard F. L. Evans , Oliver Gutfleisch , Baixiang Xu , Min Yi , Wanlin Guo

The magnetocaloric effect in exchange-coupled synthetic-antiferromagnet multilayers is investigated experimentally and theoretically. We observe a temperature-controlled inversion of the effect, where the entropy increases on switching the…

介观与纳米尺度物理 · 物理学 2021-09-17 D. M. Polishchuk , M. Persson , M. M. Kulyk , E. Holmgren , G. Pasquale , A. Ullah , R. Skomski , V. Korenivski

Perpendicular magnetic tunnel junctions with GdOX tunneling barriers have shown a unique voltage controllable interlayer magnetic coupling effect. Here we investigate the quality of the GdOX barrier and the coupling mechanism in these…

材料科学 · 物理学 2018-03-14 T. Newhouse-Illige , Y. H. Xu , Y. H. Liu , S. Huang , H. Kato , C. Bi , M. Xu , B. J. LeRoy , W. G. Wang

The periodic response of magnetoresistance to an externally tunable parameter, such as magnetic field or chemical composition, in the bulk or an artificially designed material has been exploited for technological applications as well as to…

材料科学 · 物理学 2012-09-04 S. Dickert , D. K. Singh , R. Thantirige , M. T. Tuominen

We report tunnel magnetoresistance (TMR) ratios as high as 472% at room temperature and 804% at 5 K in pseudo-spin valve (SV) CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) annealed at 450oC, which is approaching the theoretically…

材料科学 · 物理学 2009-11-11 Jun Hayakawa , Shoji Ikeda , Young Min Lee , Fumihiro Matsukura , Hideo Ohno

We report measurements of the resistance of silicon MOSFETs as a function of temperature in high parallel magnetic fields where the 2D system of electrons has been shown to be fully spin-polarized. A magnetic field suppresses the metallic…

强关联电子 · 物理学 2009-10-31 K. M. Mertes , Hairong Zheng , S. A. Vitkalov , M. P. Sarachik , T. M. Klapwijk

In general, it is difficult to access the thermal conductivity of thin insulating films experimentally just by electrical means. Here, we present a new approach utilizing the tunnel magneto-Seebeck effect (TMS) in combination with…

We investigated the dependence of giant tunnel magnetoresistance (TMR) on the thickness of an MgO barrier and on the annealing temperature of sputtered CoFeB/MgO/CoFeB magnetic tunnel junctions deposited on SiO2/Si wafers. The…

其他凝聚态物理 · 物理学 2009-11-11 Jun Hayakawa , Shoji Ikeda , Fumihiro Matsukura , Hiromasa Takahashi , Hideo Ohno