相关论文: A singlet triplet hole spin qubit in planar Ge

We analyze a prototypical particle-in-a-box model for a hole spin qubit. This quantum dot is subjected to static magnetic and electric fields, and to a radio-frequency electric field that drives Rabi oscillations owing to spin-orbit…

We propose a new scheme for individual addressing of trapped ion qubits, selecting them via their motional frequency. We show that geometric phase gates can perform single-qubit rotations using the coherent interference of spin-independent…

Acceptor dopant atoms in silicon have recently been identified as compelling candidates for spin-based quantum technologies. Interest in acceptor qubits ultimately derives from the properties of acceptor bound holes, where spin-orbit…

Hole spin relaxation in [001] strained asymmetric Si/Si$_{0.7}$Ge$_{0.3}$ (Ge/Si$_{0.3}$Ge$_{0.7}$) quantum wells is investigated in the situation with only the lowest hole subband being relevant. The effective Hamiltonian of the lowest…

Silicon spin qubits are a promising candidate for quantum computing, thanks to their high coherence, high controllability and manufacturability. However, the most scalable complementary metal-oxide-semiconductor (CMOS) based implementations…

The double quantum dot device benefits from the advantages of both the spin and charge qubits, while offering ways to mitigate their drawbacks. Careful gate voltage modulation can grant greater spinlike or chargelike dynamics to the device,…

Spins in SiGe quantum dots are promising candidates for quantum bits but are also challenging due to the valley degeneracy which could potentially cause spin decoherence and weak spin-orbital coupling. In this work we demonstrate that…

We demonstrate a 12 quantum dot device fabricated on an undoped Si/SiGe heterostructure as a proof-of-concept for a scalable, linear gate architecture for semiconductor quantum dots. The device consists of 9 quantum dots in a linear array…

In this work, we study hole transport in a planar silicon metal-oxide-semiconductor based double quantum dot. We demonstrate Pauli spin blockade in the few hole regime and map the spin relaxation induced leakage current as a function of…

Motion of electrons can influence their spins through a fundamental effect called spin-orbit interaction. This interaction provides a way to electrically control spins and as such lies at the foundation of spintronics. Even at the level of…

Silicon spin qubits are promising candidates for building scalable quantum computers due to their nanometre scale features. However, delivering microwave control signals locally to each qubit poses a challenge and instead methods that…

Geometric gates that use the global property of the geometric phase is believed to be a powerful tool to realize fault-tolerant quantum computation. However, for singlet-triplet qubits in semiconductor quantum dot, the low Rabi frequency of…

We report the first quantum bit device implemented on a foundry-compatible Si CMOS platform. The device, fabricated using SOI NanoWire MOSFET technology, is in essence a compact two-gate pFET. The qubit is encoded in the spin degree of…

Nuclear spins with hyperfine coupling to single electron spins are highly valuable quantum bits. In this work we probe and characterise the particularly rich nuclear spin environment around single silicon vacancy color-centers (V2) in…

Holes confined in semiconductor nanostructures realize qubits where the quantum mechanical spin is strongly mixed with the quantum orbital angular momentum. The remarkable spin-orbit coupling allows for fast all electrical manipulation of…

Increasing the quantum information processing power with limited number of hosts is vital for achieving quantum advantage. Here we propose a novel scheme that achieves a scalable n-ion-2n-qubit quantum processor utilizing four internal…

To realize large-scale quantum information processes, an ideal scheme for two-qubit operations should enable diverse operations with given hardware and physical interaction. However, for spin qubits in semiconductor quantum dots, the common…

Spins in semiconductor quantum dots constitute a promising platform for scalable quantum information processing. Coupling them strongly to the photonic modes of superconducting microwave resonators would enable fast non-demolition readout…

Research on Si quantum dot spin qubits is motivated by the long spin coherence times measured in Si, yet the orbital spectrum of Si dots is increased as a result of the valley degree of freedom. The valley degeneracy may be lifted by the…

We investigate theoretically the spin purity of single holes confined in vertically coupled GaAs/AlGaAs quantum dots (QDs) under longitudinal magnetic fields. A unique behavior is observed for triangular QDs, by which the spin is largely…