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The metal-insulator transition in VO2 was investigated using the three-band Hubbard model, in which the degeneracy of the 3d orbitals, the on-site Coulomb and exchange interactions, and the effects of lattice distortion were considered. A…

凝聚态物理 · 物理学 2009-11-10 Arata Tanaka

The metal--insulator transition (MIT) for the square, simple cubic, and body-centered cubic lattices is investigated within the $t-t'$ Hubbard model at half-filling by using both the Hartree-Fock approximation (HFA) generalized for the case…

强关联电子 · 物理学 2016-11-03 M. A. Timirgazin , P. A. Igoshev , A. K. Arzhnikov , V. Yu. Irkhin

Moir\'e superlattices formed from transition metal dichalcogenides (TMDs) have been shown to support a variety of quantum electronic phases that are highly tunable using applied electromagnetic fields. While the valley character of the…

Motivated by the recent discovery of metallic kagome lattice materials, AV$_{3}$Sb$_{5}$ (A=K, Rb, Cs), we investigate the ground state of the half-filled kagome lattice Hubbard model by employing the density-matrix renormalization group…

强关联电子 · 物理学 2021-10-22 Rong-Yang Sun , Zheng Zhu

We propose a two-orbital Hubbard model on an emergent honeycomb lattice to describe the low-energy physics of twisted bilayer graphene. Our model provides a theoretical basis for studying metal-insulator transition, Landau level degeneracy…

强关联电子 · 物理学 2018-07-31 Noah F. Q. Yuan , Liang Fu

Recent experiments in moir\'{e} transition metal dichalcogenide materials have reported the observation of a continuous bandwidth-tuned transition from a metal to a paramagnetic Mott insulator at a fixed filling of one electron per…

强关联电子 · 物理学 2023-02-13 Sunghoon Kim , T. Senthil , Debanjan Chowdhury

We determine the electronic structure and phase stability of paramagnetic V$_2$O$_3$ at the Mott-Hubbard metal-insulator phase transition, by employing a combination of an ab initio method for calculating band structures with dynamical…

强关联电子 · 物理学 2015-06-11 I. Leonov , V. I. Anisimov , D. Vollhardt

Strong evidence of unconventional superconductivity has been very recently reported experimentally in twisted transition metal dichalcogenide bilayer and gathered a significant amount of interest. Here we consider the Hubbard model on a…

超导电性 · 物理学 2025-10-29 Andrzej Biborski , Michał Zegrodnik

We analyze the pressure-induced metal-insulator transition in a two-dimensional vertical stack of $H_2$ molecules in x-y plane, and show that it represents a striking example of the Mott-Hubbard-type transition. Our combined exact…

强关联电子 · 物理学 2017-08-09 Andrzej Biborski , Andrzej P. Kądzielawa , Józef Spałek

The ground state phase diagram of the half-filled repulsive Hubbard model in a bilayer is investigated using cluster dynamical mean field theory. For weak to intermediate values of Coulomb repulsion $U$, the system undergoes a transition…

强关联电子 · 物理学 2009-11-13 S. S. Kancharla , S. Okamoto

We obtain exact numerical solutions of the degenerate Hubbard model in the limit of large dimensions (or large lattice connectivity). Successive Mott-Hubbard metal insulator transitions at integer fillings occur at intermediate values of…

强关联电子 · 物理学 2009-10-28 Marcelo J. Rozenberg

In twisted bilayers of semiconducting transition metal dichalcogenides (TMDs), a combination of structural rippling and electronic coupling gives rise to periodic moir\'e potentials that can confine charged and neutral excitations. Here, we…

介观与纳米尺度物理 · 物理学 2021-05-04 Sara Shabani , Dorri Halbertal , Wenjing Wu , Mingxing Chen , Song Liu , James Hone , Wang Yao , Dmitri N. Basov , Xiaoyang Zhu , Abhay N. Pasupathy

We study the quantum phase transition from an insulator to a metal realized at t'=t'_c > 0.5t in the ground state of the half-filled Hubbard chain with both nearest-neighbor (t) and next-nearest-neighbor (t') hopping. The study is carried…

强关联电子 · 物理学 2007-05-23 G. I. Japaridze , R. M. Noack , D. Baeriswyl

Layered two-dimensional (2D) materials exhibit unique properties, expanding opportunities in material design. We investigate MX$_2$ transition metal dichalcogenides (TMDCs) (M = Mo, W; X = S, Se, Te) in homo- and heterobilayers with…

材料科学 · 物理学 2025-03-13 Yu-Hsiu Lin , William P. Comaskey , Jose L. Mendoza-Cortes

We use the Kotliar-Ruckenstein slave boson technique to treat the strong correlation of the Hubbard model. In a first part we discuss the metal to insulator transition that is occurring on the honeycomb lattice at half filling. We find the…

凝聚态物理 · 物理学 2007-05-23 Raymond Fresard , Klaus Doll

Moir\'e materials, with superlattice periodicity many times the atomic length scale, have enabled the studies of strong electronic correlations and band topology with unprecedented tunability. However, nonvolatile control of the moir\'e…

介观与纳米尺度物理 · 物理学 2022-09-15 Kaifei Kang , Wenjin Zhao , Yihang Zeng , Kenji Watanabe , Takashi Taniguchi , Jie Shan , Kin Fai Mak

Moire superlattices in twisted transition metal dichalcogenide bilayers have emerged as a rich platform for exploring strong correlations using optical spectroscopy. Despite observation of rich Mott-Wigner physics stemming from an interplay…

介观与纳米尺度物理 · 物理学 2021-11-10 Ido Schwartz , Yuya Shimazaki , Clemens Kuhlenkamp , Kenji Watanabe , Takashi Taniguchi , Martin Kroner , Ataç Imamoğlu

We theoretically study a generalized Hubbard model on moir\'e superlattices of twisted bilayers, and find very rich filling-factor-dependent quantum phase diagrams tuned by interaction strength and twist angle. Strong long-range Coulomb…

强关联电子 · 物理学 2020-11-11 Haining Pan , Fengcheng Wu , Sankar Das Sarma

We study the transition from paramagnetic metal to paramagnetic insulator by finite temperature Quantum Monte-Carlo simulations for the 2D Hubbard model at half-filling. Working at the moderately high temperature T=0.33*t where the spin…

强关联电子 · 物理学 2007-05-23 C. Groeber , M. G. Zacher , R. Eder

We study the phase diagram of a square lattice Hubbard model with a perfect vacancy superstructure. The model can be also defined on a new bipartite lattice with each building blocks consisting of a minimal square. The non-interacting model…

强关联电子 · 物理学 2013-05-29 Hua Chen , Chao Cao , Jianhui Dai