相关论文: Single Microhole per Pixel in CMOS Image Sensor wi…

We report recent progress toward on-chip single photon emission and detection in the near infrared utilizing semiconductor nanowires. Our single photon emitter is based on a single InAsP quantum dot embedded in a p-n junction defined along…

This paper presents the design and test results of a prototype monolithic pixel sensor manufactured in deep-submicron fully-depleted Silicon-On-Insulator (SOI) CMOS technology. In the SOI technology, a thin layer of integrated electronics…

The Skipper-in-CMOS image sensor integrates the non-destructive readout capability of Skipper Charge Coupled Devices (Skipper-CCDs) with the high conversion gain of a pinned photodiode in a CMOS imaging process, while taking advantage of…

We have used a mesh experiment in order to measure the sub-pixel structure of the EPIC MOS CCDs on-board the XMM/NEWTON satellite. The EPIC MOS CCDs have 40 $\mu$m-square pixels which have an open electrode structure in order to improve the…

Miniaturized spectrometers employing chip solutions are essential for a wide range of applications, such as wearable health monitoring, biochemical sensing, and portable optical coherence tomography. However, the development of integrated…

An array of DEPFET pixels is one of several concepts to implement an active pixel sensor. Similar to PNCCD and SDD detectors, the typically 0.45 mm thick silicon sensor is fully depleted by the principle of sideward depletion. They have…

In single pixel photography an image is sampled with a programmable optical element like a digital micromirror array or a spatial light modulator that can project an orthogonal base. The light reflected or diffracted is collected by a lens…

The study proposes to use the photon trapping micro-structures to enhance quantum efficiency of the mid infrared photodetectors. The nanostructure that is consist of micro holes reduces reflection and bends the near normally incident light…

We demonstrate a large grid of individually addressable superconducting single photon detectors on a single chip. Each detector element is fully integrated into an independent waveguide circuit with custom functionality at telecom…

The development of CMOS pixel sensors with column parallel read-out and integrated zero-suppression has resulted in a full size, nearly 1 Megapixel, prototype with ~100 \mu s read-out time. Its performances are quite close to the ILD vertex…

In this contribution, we explore the imaging limits of terahertz single-pixel cameras and present a way to improve the achievable signal-to-noise ratio and spatial resolution using a technique called dithering masks. The proposed procedure…

We demonstrate a 64-pixel free-space-coupled array of superconducting nanowire single photon detectors optimized for high detection efficiency in the near-infrared range. An integrated, readily scalable, multiplexed readout scheme is…

CMOS sensors were successfully implemented in the STAR tracker [1]. LHC experiments have shown that efficient b tagging, reconstruction of displaced vertices and identification of disappearing tracks are necessary. An improved vertex…

In this paper we show that the sensitivity of absorption imaging of ultracold atoms can be significantly improved by imaging in a standing-wave configuration. We present simulations of single-atom absorption imaging both for a…

A broad range of scientific and industrial disciplines require precise optical measurements at very low light levels. Single-photon detectors combining high efficiency and high time resolution are pivotal in such experiments. By using…

We present a compact, noise-resilient reconstructive spectrometer-on-a-chip that achieves high-resolution hyperspectral imaging across an extended near-infrared (NIR) range up to 1100nm. The device integrates monolithically fabricated…

CMOS detectors offer many advantages over CCDs for optical and UV astronomical applications, especially in space where high radiation tolerance is required. However, astronomical instruments are most often designed for low light-level…

To understand the scientific imaging capability, one must characterize the intra-pixel sensitivity variation (IPSV) of the CMOS image sensor. Extracting an IPSV map contributes to an improved detector calibration that allows to eliminate…

Monolithic pixel sensors for charged particle detection and imaging applications have been designed and fabricated using commercially available, deep-submicron Silicon-On-Insulator (SOI) processes, which insulate a thin layer of integrated…

We report on the extension of the spectral sensitivity of superconducting nanowire single-photon detectors to a wavelength of 29 $\mu$m. This represents the first demonstration of a time correlated single-photon counting detector at these…