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Transition metal dichalcogenides (TMDs) are layered semiconducting van der Waal crystals and promising materials for a wide range of electronic and optoelectronic devices. Realizing practical electrical and optoelectronic device…

介观与纳米尺度物理 · 物理学 2019-08-05 Hao Lee , S. Deshmukh , Jing Wen , V. Z. Costa , J. S. Schuder , M. Sanchez , A. S. Ichimura , Eric Pop , Bin Wang , A. K. M. Newaz

We study the electronic structure and transport properties of zigzag and armchair monolayer molybdenum disulfide nanoribbons using an 11-band tight-binding model that accurately reproduces the material's bulk band structure near the band…

介观与纳米尺度物理 · 物理学 2017-02-02 Emilia Ridolfi , Leandro R. F. Lima , Eduardo R. Mucciolo , Caio H. Lewenkopf

Ab initio density functional theory calculations are carried out to predict the electronic properties and relative stability of gallium sulfide nanoribbons (Ga2S2-NRs) with either zigzag- or armchair-terminated edges. It is found that the…

介观与纳米尺度物理 · 物理学 2016-10-12 Bao-Ji Wang , Xiao-Hua Li , Li-Wei Zhang , Guo-Dong Wang , San-Huang Ke

Monolayers of transition metal dichalcogenides are semiconducting materials which offer many prospects in optoelectronics. A monolayer of molybdenum disulfide (MoS2) has a direct bandgap of 1.88 eV. Hence, when excited with optical photon…

We investigate the resonant optical response of single material-anisotropic nanoparticles (NPs) of molybdenum disulfide (MoS$_2$) and their two-dimensional arrays (metasurfaces) irradiated by plane waves of the telecomunication optical…

Precise manipulation of electronic band structures of two-dimensional (2D) transition metal dichalcogenides and oxides (TMD&Os) via localised strain engineering is an exciting avenue for exploiting their unique characteristics for…

The large family of layered transition-metal dichalcogenides is widely believed to constitute a second family of two-dimensional (2D) semiconducting materials that can be used to create novel devices that complement those based on graphene.…

We present our study on atomic, electronic, magnetic and phonon properties of one dimensional honeycomb structure of molybdenum disulfide (MoS$_2$) using first-principles plane wave method. Calculated phonon frequencies of bare armchair…

材料科学 · 物理学 2011-05-24 C. Ataca , H. Şahin , E. Aktürk , S. Ciraci

The emergence of transition metal dichalcogenides (TMDs) as 2D electronic materials has stimulated proposals of novel electronic and photonic devices based on TMD heterostructures. Here we report the determination of band offsets in TMD…

Wrinkles and nanobubbles are an integral and often unavoidable part of integrating 2D van der Waals semiconductors into actual device architectures. Despite their ubiquitous nature, quantitative correlation between such spatially…

材料科学 · 物理学 2026-04-01 Soumyadip Hazra , Sraboni Dey , Arijit Kayal , Narendra Shah , Renjith Nadarajan , Joy Mitra

Two dimensional transition metal dichalcogenides (TMDC) have very interesting properties for optoelectronic devices. In this work we theoretically investigate and predict that superlattices comprised of MoS$_{2}$ and WSe$_{2}$ multilayers…

材料科学 · 物理学 2013-10-29 Yong-Hong Zhao , Feng Yang , Jian Wang , Hong Guo , Wei Ji

Monolayers (ML) of Group-6 transition-metal dichalcogenides (TMDs) are semiconducting two-dimensional materials with direct bandgap, showing promising applications in various fields of science and technology, such as nanoelectronics and…

Integration of semiconducting transition metal dichalcogenides (TMDs) into functional optoelectronic circuitries requires an understanding of the charge transfer across the interface between the TMD and the contacting material. Here, we use…

Monolayer Molybdenum Disulfide (MoS2) with a direct band gap of 1.8 eV is a promising two-dimensional material with a potential to surpass graphene in next generation nanoelectronic applications. In this letter, we synthesize monolayer MoS2…

介观与纳米尺度物理 · 物理学 2013-06-18 Han Liu , Mengwei Si , Sina Najmaei , Adam T. Neal , Yuchen Du , Pulickel M. Ajayan , Jun Lou , Peide D. Ye

We probe the room temperature photoluminescence of $N$-layer molybdenum ditelluride (MoTe$_2$) in the continuous wave (cw) regime. The photoluminescence quantum yield of monolayer MoTe$_2$ is three times larger than in bilayer MoTe$_2$ and…

介观与纳米尺度物理 · 物理学 2016-09-02 Guillaume Froehlicher , Etienne Lorchat , Stéphane Berciaud

This study presents a comprehensive first-principles investigation of the structural, electronic and optical properties of monolayer \ch{Mo_{1-x}W_xS2} alloys, systematically exploring the full compositional range ($x=0$ to $1$) using…

The millimeter sized monolayer and bilayer 2H-MoTe2 single crystal samples are prepared by a new mechanical exfoliation method. Based on such high-quality samples, we report the first direct electronic structure study on them, using…

Monolayers of transition-metal dichalcogenides (TMDs) hold great promise as future nanoelectronic and optoelectronic devices. An essential feature for achieving high device performance is the use of suitable supporting substrates, which can…

材料科学 · 物理学 2021-03-10 Nourdine Zibouche , Martin Schlipf , Feliciano Giustino

The discovery of graphene has put the spotlight on other layered materials including transition metal dichalcogenites (TMD) as building blocks for novel heterostructures assembled from stacked atomic layers. Molybdenum disulfide, MoS2, a…

介观与纳米尺度物理 · 物理学 2014-09-19 Chih-Pin Lu , Guohong Li , Jinhai Mao , Li-Min Wang , Eva Y. Andrei

Monolayer MoS$_2$ is a direct band gap semiconductor with potential applications in optoelectronics and photonics. MoS$_2$ also has a large optical nonlinearity. However, the atomic thickness of the monolayer limits the strength of the…