相关论文: Picosecond Switching of Optomagnetic Tunnel Juncti…

Event-based neuromorphic systems provide a low-power solution by using artificial neurons and synapses to process data asynchronously in the form of spikes. Ferroelectric Tunnel Junctions (FTJs) are ultra low-power memory devices and are…

Magnetic random access memory that uses magnetic tunnel junction memory cells is a high performance, non-volatile memory technology that goes beyond traditional charge-based memories. Today its speed is limited by the high magnetization of…

My research is dedicated to the electronic properties of functional oxides. My activity specifically focuses on ferroelectric tunnel junctions in which an ultrathin layer of ferroelectric material is intercalated between two metallic…

Since the discovery of the spin orbit torque (SOT) induced by spin Hall effect in heavy metals, much effort has been devoted to understanding the mechanism of the charge-to-spin conversion as well as to developing new schemes for high…

Superparamagnetic tunnel junctions (SMTJs) are promising sources for the randomness required by some compact and energy-efficient computing schemes. Coupling SMTJs gives rise to collective behavior that could be useful for cognitive…

We demonstrate ultra-fast (down to 400 ps) bipolar magnetization switching of a three-terminal perpendicular Ta/FeCoB/MgO/FeCoB magnetic tunnel junction. The critical current density rises significantly as the current pulse shortens below…

Pulsed spin-torque switching has been studied using single-shot time-resolved electrical measurements in perpendicularly magnetized magnetic tunnel junctions as a function of pulse amplitude and junction size in 50 to 100 nm diameter…

Light pulses offer a faster, more energy-efficient, and direct route to magnetic bit writing, pointing toward a hybrid memory and computing paradigm based on photon transmission and spin retention. Yet progress remains hindered, as…

Deep Spiking Neural Networks are becoming increasingly powerful tools for cognitive computing platforms. However, most of the existing literature on such computing models are developed with limited insights on the underlying hardware…

Multiferroic tunnel junctions (MFTJs) have already been proved to be promising candidates for application in spintronics devices. The coupling between tunnel magnetoresistance (TMR) and tunnel electroresistance (TER) in MFTJs can provide…

Neuromorphic computing uses brain-inspired principles to design circuits that can perform computational tasks with superior power efficiency to conventional computers. Approaches that use traditional electronic devices to create artificial…

Molecular bridges covalently bonded to two ferromagnetic electrodes can transform ferromagnetic materials and produce intriguing spin transport characteristics. This paper discusses the impact of molecule induced strong coupling on spin…

We analyse the phenomenon of back-hopping in spin-torque induced switching of the magnetization in perpendicularly magnetized tunnel junctions. The analysis is based on single-shot time-resolved conductance measurements of the pulse-induced…

The building block of in-memory computing with spintronic devices is mainly based on the magnetic tunnel junction with perpendicular interfacial anisotropy (p-MTJ). The resulting asymmetric write and read-out operations impose challenges in…

Magnetic tunnel junctions (MTJs), composed of two ferromagnetic electrodes separated by a thin insulating barrier layer, are currently used in spintronic devices, such as magnetic sensors and magnetic random access memories. Recently,…

Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and…

The ever-increasing amount of data from ubiquitous smart devices fosters data-centric and cognitive algorithms. Traditional digital computer systems have separate logic and memory units, resulting in a huge delay and energy cost for…

We study ns scale spin-torque-induced switching in perpendicularly magnetized tunnel junctions (pMTJ). Although the switching voltages match with the macrospin instability threshold, the electrical signatures of the reversal indicate the…

Electric-field control of spin states offers a promising route to ultra-low-power, ultra-fast magnetization switching in spintronic devices such as magnetic tunnel junctions (MTJs). Recent progress in modulating spin-orbit interactions at…

The combination of superconducting and magnetic materials to create novel superconducting devices has been motivated by the discovery of Josephson critical current (Ics) oscillations as a function of magnetic layer thickness and the…