超快垂直自旋轨道转矩MRAM
材料科学
2018-03-06 v2
摘要
我们展示了三端垂直 Ta/FeCoB/MgO/FeCoB 磁隧道结的超快（低至400 ps）双极磁化翻转。当电流脉冲缩短至10 ns以下时，临界电流密度显著上升，这导致写入能量在纳秒范围内出现最小值。我们的结果表明，SOT-MRAM可实现快速且低功耗的写入操作，这使其有望用于非易失性缓存存储器应用。
引用
@article{arxiv.1509.02375,
title = {Ultra-fast perpendicular Spin Orbit Torque MRAM},
author = {Murat Cubukcu and Olivier Boulle and Nikolaï Mikuszeit and Claire Hamelin and Thomas Brächer and Nathalie Lamard and Marie-Claire Cyrille and Liliana Buda-Prejbeanu and Kevin Garello and Ioan Mihai Miron and O. Klein and G. de Loubens and V. V. Naletov and Juergen Langer and Berthold Ocker and Pietro Gambardella and Gilles Gaudin},
journal= {arXiv preprint arXiv:1509.02375},
year = {2018}
}
备注
15 pages, 3 figures