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The development of altermagnets is fundamentally important for advancing spintronic device technology, but remains unpractical for the weak spin splitting in most cases, especially in two-dimensional materials. Based on spin group symmetry…

材料科学 · 物理学 2026-02-03 Xinyu Yang , Shan-Shan Wang , Shuai Dong

Spintronics is a rapidly evolving technology that utilizes the spin of electrons along with their charge to enable high speed, low power and non volatile electronic devices. The development of novel materials with tailored magnetic and…

材料科学 · 物理学 2025-04-25 Ravinder Kumar , Sachin Gupta

The antiferromagnetic (AFM) semimetal YbMnSb$_2$ has recently been identified as a candidate topological material, driven by time-reversal symmetry breaking. Depending on the ordered arrangement of Mn spins below the N\'{e}el temperature,…

We have theoretically designed the half-metallic (HM) antiferromagnets (AFMs) in thiospinel systems, $\rm Mn(CrV)S_{4}$ and $\rm Fe_{0.5}Cu_{0.5}(V_{0.5}Ti_{1.5})S_{4}$, based on the electronic structure studies in the local-spin-density…

材料科学 · 物理学 2009-11-07 Min Sik Park , B. I. Min

Altermagnetic (AM) materials have recently attracted significant interest due to the non-relativistic momentum-dependent spin splitting of their electronic band structure which may be useful for antiferromagnetic (AFM) spintronics. So far,…

材料科学 · 物理学 2024-09-04 Kartik Samanta , Ding-Fu Shao , Evgeny Y. Tsymbal

Determination of the magnetic structure and confirmation of the presence or absence of inversion ($\mathcal{P}$) and time reversal ($\mathcal{T}$) symmetry is imperative for correctly understanding the topological magnetic materials. Here…

Spin gapless semiconductors based Heusler alloys are the special class of materials due to their unique band structure, high spin polarization and high Curie temperature. These materials exhibit a distinct electronic structure: a nonzero…

Half-metallic antiferromagnets are the ideal materials for spintronic applications since their zero magnetization leads to lower stray fields and thus tiny energy losses. Starting from the Mn$_2$VAl and Mn$_2$VSi alloys we substitute Co or…

材料科学 · 物理学 2007-09-01 I. Galanakis , K. Ozdogan , E. Sasioglu , B. Aktas

Half-metals are ferromagnets hosting spin-polarized conducting carriers and crucial for spintronics applications. The chromium spinel HgCr2Se4 represents a unique type of half-metal, which features a half-metal to semiconductor transition…

Altermagnetism represents a recently established class of collinear magnetism that combines zero net magnetization with momentum-dependent spin polarization, enabled by symmetry constraints rather than spin-orbit coupling. This distinctive…

材料科学 · 物理学 2026-03-16 Ali Sufyan , Brahim Marfoua , J. Andreas Larsson , Erik van Loon , Rickard Armiento

Half-metallic Heusler alloy compounds with Curie temperatures above room temperature are suitable candidate electrode materials for injecting large spin-polarised charge carriers into the semiconducting barriers at the ferromagnet…

材料科学 · 物理学 2025-04-23 Aloka Ranjan Sahoo , Sharat Chandra

Half-metallic ferromagnetism (HMFM) occurs rarely in materials and yet offers great potential for spintronic devices. Recent experiments suggest a class of compounds with the `ThCr$_{2}$Si$_{2}$' (122) structure -- isostructural and…

材料科学 · 物理学 2020-08-18 Sinead M. Griffin , Jeffrey B. Neaton

We investigate the superconductivity of two-dimensional spin-1/2 Fermi systems with $d$-wave altermagnetism under external magnetic field near zero temperature. At large altermagnetic coupling without magnetic field, we show that…

超导电性 · 物理学 2026-01-13 Hui Hu , Zhao Liu , Xia-Ji Liu

Among Heusler compounds, the ones being magnetic semiconductors (also known as spin-filter materials) are widely studied as they offer novel functionalities in spintronic/magnetoelectronic devices. The spin-gapless semiconductors are a…

材料科学 · 物理学 2017-06-12 M. Tas , E. Sasioglu , C. Friedrich , I. Galanakis

We demonstrate efficient spin-polarized tunneling between a ferromagnetic metal and a ferromagnetic semiconductor with highly mismatched conductivities. This is indicated by a large tunneling magnetoresistance (up to 30%) at low…

材料科学 · 物理学 2009-11-07 S. H. Chun , S. J. Potashnik , K. C. Ku , P. Schiffer , N. Samarth

The recent development of MBE techniques for growth of III-V ferromagnetic semiconductors has created materials with exceptional promise in spintronics, i.e. electronics that exploit carrier spin polarization. Among the most carefully…

材料科学 · 物理学 2015-06-25 A. H. MacDonald , P. Schiffer , N. Samarth

Half-metallic Heusler compounds are of significant interest for spintronics. For device fabrication, compounds that can be epitaxially grown on III-V semiconductors are particularly attractive. We present a first-principles investigation of…

We found that magnetic ground state of one-dimensional atomic chains of carbon-transition metal compounds exhibit half-metallic properties. They are semiconductors for one spin-direction, but show metallic properties for the opposite…

材料科学 · 物理学 2009-11-11 S. Dag , S. Tongay , T. Yildirim , E. Durgun , R. T. Senger , C. Y. Fong , S. Ciraci

Altermagnetic materials, with real-space antiferromagnetic arrangement and reciprocal-space anisotropic spin splitting, have attracted much attention. However, the spin splitting is small in most altermagnetic materials, which is a…

材料科学 · 物理学 2025-02-26 Peng-Jie Guo , Xiao-Yao Hou , Ze-Feng Gao , Huan-Cheng Yang , Wei Ji , Zhong-Yi Lu

The central target of spintronics research is to achieve flexible control of highly efficient and spin-polarized electronic currents. Based on first-principles calculations and k-p models, we demonstrate that Cu2S/MnSe heterostructures are…

材料科学 · 物理学 2019-01-04 Yang Xue , Bao Zhao , Yan Zhu , Tong Zhou , Jiayong Zhang , Ningbo Li , Hua Jiang , Zhongqin Yang