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相关论文: Strain Engineering in Monolayer WS2 and WS2 Nanoco…

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We demonstrate the continuous and reversible tuning of the optical band gap of suspended monolayer MoS2 membranes by as much as 500 meV by applying very large biaxial strains. By using chemical vapor deposition (CVD) to grow crystals that…

Layer number-dependent band structures and symmetry are vital for the electrical and optical characteristics of two-dimensional (2D) transition metal dichalcogenides (TMDCs). Harvesting 2D TMDCs with tunable thickness and properties can be…

The objective of this work is to study the effects of charge redistribution, applied layer-normal electric fields, applied strain, and layer engineering on the band alignment of Black Phosphorus (BP)/Molybdenum disulphide (MoS2)…

材料科学 · 物理学 2022-12-28 Nupur Navlakha , Priyamvada Jadaun , Leonard F. Register , Sanjay K. Banerjee

Monolayer molybdenum disulphide (MoS$_2$) is a promising two-dimensional (2D) material for nanoelectronic and optoelectronic applications. The large-area growth of MoS$_2$ has been demonstrated using chemical vapor deposition (CVD) in a…

With the advances in low dimensional transition metal dichalcolgenides (TMDCs) based metal oxide semiconductor field effect transistor (MOSFET), the interface between semiconductors and dielectrics has received considerable attention due to…

计算物理 · 物理学 2017-01-02 Sheng Yu , Shunjie Ran , Hao Zhu , Kwesi Eshun , Chen Shi , Kai Jiang , Qiliang Li

Strain engineering is a powerful tool for tuning the electronic, magnetic, and topological properties of two-dimensional (2D) materials and thin films - particularly at high values of strain (>3%) where many electronic, magnetic, and…

材料科学 · 物理学 2026-04-30 Yangchen He , Jessica Kienbaum , Wuzhang Fang , Hongrui Ma , Ying Wang , Ping Yuan , Daniel A. Rhodes

We use micro-Raman and photoluminescence (PL) spectroscopy at 300K to investigate the influence of uniaxial tensile strain on the vibrational and optoelectronic properties of monolayer and bilayer MoS2 on a flexible substrate. The initially…

介观与纳米尺度物理 · 物理学 2013-09-11 G. Wang , C. R. Zhu , B. L. Liu , X. Marie , Q. X. Feng , X. X. Wu , H. Fan , P. H. Tan , T. Amand , B. Urbaszek

Transition-metal dichalcogenide (TMD) semiconductors have been widely studied due to their distinctive electronic and optical properties. The property of TMD flakes is a function of its thickness, or layer number (N). How to determine N of…

材料科学 · 物理学 2016-03-01 Xiao-Li Li , Xiao-Fen Qiao , Wen-Peng Han , Xin Zhang , Qing-Hai Tan , Tao Chen , Ping-Heng Tan

Two-dimensional (2D) transition metal dichalcogenides (TMDs) hold great potential for future low-energy optoelectronics owing to their unique electronic, optical, and mechanical properties. Chemical vapor deposition (CVD) is the technique…

Hyperspectral photoluminescence (HSPL) imaging provides spatially resolved spectral information for monolayer transition-metal dichalcogenides (TMDs), enabling the detection of subtle variations in excitonic features that are not accessible…

材料科学 · 物理学 2026-04-03 Adam Alfrey , Cole Tait , Takashi Taniguchi , Kenji Watanabe , Steven T. Cundiff

Monolayers (MLs) of transition metal dichalcogenides (TMDs) such as WSe2 and MoSe2 can be placed by dry stamping directly on broadband dielectric resonators, which have the ability to enhance the spontaneous emission rate and brightness of…

Tunability of polar and semiconducting properties of low-dimensional transition metal dichalcogenides (TMDs) have propelled them to the forefront of fundamental and applied physical research. These materials can vary from non-polar to…

One of the exciting features of two-dimensional (2D) materials is their electronic and optical tunability through strain engineering. Previously, we found a class of 2D ferroelectric Rashba semiconductors PbX (X = S, Se, Te) with tunable…

材料科学 · 物理学 2018-06-29 Paul Z. Hanakata , A. S. Rodin , Harold S. Park , David K. Campbell , A. H. Castro Neto

Two-dimensional (2D) materials have received a lot of interest over the past decade. Especially van der Waals (vdW) 2D materials, such as transition metal dichalcogenides (TMDCs), and their heterostructures exhibit semiconducting properties…

Localized quantum emitters in transition-metal dichalcogenides (TMDs) have recently emerged as solid-state candidates for on-demand sources of single photons. Due to the role of strain in the site-selective creation of TMD emitters, their…

Strain provides an effective means to tune the electrical properties while retaining the native chemical composition of the material. Unlike three-dimensional solids, two-dimensional materials withstand higher levels of elastic strain…

介观与纳米尺度物理 · 物理学 2020-04-14 Ashby Phillip John , Arya Thenapparambil , Madhu Thalakulam

Single-layer MoS2 is a direct-gap semiconductor whose electronic band structure strongly depends on the strain applied to its crystal lattice. While uniaxial strain can be easily applied in a controlled way, e.g., by bending of a flexible…

介观与纳米尺度物理 · 物理学 2015-10-01 G. Plechinger , A. Castellanos-Gomez , M. Buscema , H. S. J. van der Zant , G. A. Steele , A. Kuc , T. Heine , C. Schüller , T. Korn

Transition metal dichalcogenide (TMD) monolayers attract great attention due to their specific structural, electronic and mechanical properties. The formation of their lateral heterostructures allows a new degree of flexibility in…

材料科学 · 物理学 2020-09-29 Sadegh Imani Yengejeh , William Wen , Yun Wang

Despite 2D materials holding great promise for a broad range of applications, the proliferation of devices and their fulfillment of real-life demands are still far from being realized. Experimentally obtainable samples commonly experience a…

介观与纳米尺度物理 · 物理学 2021-01-07 Pavel V. Kolesnichenko , Qianhui Zhang , Changxi Zheng , Michael S. Fuhrer , Jeffrey A. Davis

Strain fields, dislocations and defects may be used to control electronic properties of graphene. By using advanced imaging techniques with high-resolution transmission electron microscopes, we have measured the strain and rotation fields…

介观与纳米尺度物理 · 物理学 2015-10-20 L. L. Bonilla , A. Carpio , C. Gong , J. H. Warner