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相关论文: Low-Temperature Thermopower in CoSbS

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We study Coulomb blockade oscillations of thermoelectric coefficients of a single electron transistor based on a quantum dot strongly coupled to one of the leads by a quantum point contact. At temperatures below the charging energy E_C the…

介观与纳米尺度物理 · 物理学 2009-11-07 K. A. Matveev , A. V. Andreev

There is evidence that magnetism can potentially increase the thermopower of materials, most likely due to magnon scattering, suggesting the incorporation of intrinsic magnetic semiconductors in non-magnetic thermoelectric materials. Here,…

Today solid-state cooling technologies below liquid nitrogen boiling temperature (77 K), crucial to quantum information technology and probing quantum state of matter, are greatly limited due to the lack of good thermoelectric and/or…

材料科学 · 物理学 2022-12-28 Peng Li , Pengfei Qiu , Qing Xu , Jun Luo , Yifei Xiong , Jie Xiao , Niraj Aryal , Qiang Li , Lidong Chen , Xun Shi

Today, high-performance thermoelectric and thermomagnetic materials operating in the low-temperature regime, particularly below the boiling point of liquid nitrogen remain scarce. Most thermomagnetic materials reported to date exhibit a…

材料科学 · 物理学 2025-07-29 Antu Laha , Sarah Paone , Niraj Aryal , Qiang Li

We calculate the thermoelectric power (or thermopower) of many semiconducting single wall carbon nanotubes (s-SWNTs) within a diameter range 0.5-1.5 nm by using the Boltzmann transport formalism combined with an extended tight-binding…

介观与纳米尺度物理 · 物理学 2015-10-27 Nguyen T. Hung , Ahmad R. T. Nugraha , Eddwi H. Hasdeo , Mildred S. Dresselhaus , Riichiro Saito

Substitution of Sb in FeSb$_2$ by less than 0.5% of Te induces a transition from a correlated semiconductor to an unconventional metal with large effective charge carrier mass $m^*$. Spanning the entire range of the semiconductor-metal…

材料科学 · 物理学 2016-08-14 P. Sun , M. Søndergaard , Y. Sun , S. Johnsen , B. B. Iversen , F. Steglich

We study the thermopower of a quantum dot weakly coupled to two reservoirs by tunnel junctions. At low temperatures the transport through the dot is suppressed by charging effects (Coulomb blockade). As a result the thermopower shows an…

介观与纳米尺度物理 · 物理学 2009-11-07 M. Turek , K. A. Matveev

This paper reports thermopower and conductivity measurements through the metal-insulator transition for 2-dimensional electron gases in high mobility Si-MOSFETs. At low temperatures both thermopower and conductivity show critical behaviour…

强关联电子 · 物理学 2009-11-07 R. Fletcher , V. M. Pudalov , A. D. B. Radcliffe , C. Possanzini

This letter reports thermopower and conductivity measurements through the metal-insulator transition for 2-dimensional electron gases in high mobility Si-MOSFET's. At low temperatures both thermopower and conductivity show critical behavior…

无序系统与神经网络 · 物理学 2007-05-23 R. Fletcher , V. M. Pudalov , A. D. B. Radcliffe , C. Possanzini

We report temperature and magnetic field dependence of the thermal transport properties in single crystals of (Sr/Ca)MnBi$_2$ with linear energy dispersion. In SrMnBi$_2$ thermopower is positive, indicating hole-type carriers and the…

材料科学 · 物理学 2012-04-11 Kefeng Wang , Limin Wang , C. Petrovic

We show that synthesis-induced Metal -Insulator transition (MIT) for electronic transport along the orthorombic c axis of FeSb$_{2}$ single crystals has greatly enhanced electrical conductivity while keeping the thermopower at a relatively…

强关联电子 · 物理学 2012-10-12 Qing Jie , Rongwei Hu , Emil Bozin , A. Llobet , I. Zaliznyak , C. Petrovic , Q. Li

We review many-body effects, their microscopic origin, as well as their impact onto thermoelectricity in correlated narrow-gap semiconductors. Members of this class---such as FeSi and FeSb$_2$---display an unusual temperature dependence in…

强关联电子 · 物理学 2018-04-11 Jan M. Tomczak

We study thermoelectric transport at low temperatures in correlated Kondo insulators, motivated by the recent observation of a high thermoelectric figure of merit(ZT) in $FeSb_2$ at $T \sim 10 K$. Even at room temperature, correlations have…

材料科学 · 物理学 2013-08-14 Seungmin Hong , Pouyan Ghaemi , Joel E. Moore , Philip W. Phillips

We report a thermal transport study of IrSbSe, which crystallizes in a noncentrosymmetric cubic structure with the $P2_13$ space group and shows a narrow-gap semiconducting behavior. The large discrepancy between the activation energy for…

强关联电子 · 物理学 2022-11-08 Yu Liu , Milinda Abeykoon , Niraj Aryal , David Graf , Zhixiang Hu , Weiguo Yin , C. Petrovic

Ultrathin layers of semiconducting molybdenum disulfide (MoS2) offer significant prospects in future electronic and optoelectronic applications. Although an increasing number of experiments bring light into the electronic transport…

介观与纳米尺度物理 · 物理学 2014-07-10 Jing Wu , Hennrik Schmidt , Amara Kiran Kumar , Xiangfan Xu , Goki Eda , Barbaros Özyilmaz

Topological Kondo insulator SmB6 has attracted quite a lot of attentions from condensed matter physics community. A number of unique electronic properties, including low- temperature resistivity anomaly, 1D electronic transport and 2D Fermi…

材料科学 · 物理学 2016-07-07 Zengji Yue , Qinjun Chen , Xiaolin Wang

Nanostructured composites and nanowire arrays of traditional thermoelectrics like Bi, Bi(1-x)Sb(x) and Bi(2)Te(3) have metallic Rashba surface spin-orbit bands featuring high mobilities rivaling that of the bulk for which topological…

材料科学 · 物理学 2015-05-30 T. E. Huber , K. Owusu , S. Johnson , A. Nikolaeva L. Konopko , R. C. Johnson , M. J. Graf

With decreasing density $n_s$ the thermopower $S$ of a low-disorder 2D electron system in silicon is found to exhibit a sharp increase by more than an order of magnitude, tending to a divergence at a finite, disorder-independent density…

强关联电子 · 物理学 2015-06-03 A. Mokashi , S. Li , Bo Wen , S. V. Kravchenko , A. A. Shashkin , V. T. Dolgopolov , M. P. Sarachik

We report results of low-temperature thermodynamic and transport measurements of Pb_{1-x}Tl_{x}Te single crystals for Tl concentrations up to the solubility limit of approximately x = 1.5%. For all doped samples, we observe a…

强关联电子 · 物理学 2009-11-10 Y. Matsushita , H. Bluhm , T. H. Geballe , I. R. Fisher

We present a study of electronic transport in individual Bi nanowires of large diameter relative to the Fermi wavelength. Measurements of the resistance and thermopower of intrinsic and Sn-doped Bi wires with various wire diameters, ranging…

介观与纳米尺度物理 · 物理学 2009-11-13 A. Nikolaeva , T. E. Huber , D. Gitsu , L. Konopko
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