相关论文: A Cascade Electron Source Based on Series Horizont…
Several models of thermionic energy nanoconverters have been proposed to study the transport phenomena that take place in electronic devices. For example, in resonant tunneling junctions those phenomena are manifested through the…
The vacuum arc ion source has evolved into a more or less standard laboratory tool for the production of high-current beams of metal ions, and is now used in a number of different embodiments at many laboratories around the world.…
Electron tunneling through small metallic islands with low capacitance is studied. The large charging energy in these systems is responsible for nonperturbative Coulomb blockade effects. We further consider the effect of electron…
Recently, epitaxially connected at facets semiconductor nanocrystals (NCs) have been introduced to fascilitate the electron transport between nanocrystals. To fully deploy their potential a better understanding of the exciton transfer…
Low power consumption in both static and dynamic modes of operation is a key requirement in modern, highly scaled nanoelectronics. Tunneling field-effect transistors (TFETs) that exploit direct band-to-band tunneling of charges and exhibit…
We propose a novel probe technique capable of performing local low-temperature spectroscopy on a 2D electron system (2DES) in a semiconductor heterostructure. Motivated by predicted spatially-structured electron phases, the probe uses a…
We performed scanning tunneling spectroscopic experiments on hole-doped NdBa$_2$Cu$_3$O$_{7-\delta}$. The d$I$/d$V$ curves obtained at 4.2 K are asymmetric with clear peak-dip and hump structures. Energy derivatives of these curves show…
The tunnel junction between tip and sample in a scanning tunneling microscope is an ideal platform to access the local density of states in the sample through the differential conductance. We show that the energy resolution that can be…
Numerical simulations and `proof of principle' experiments showed clearly the interest of using crystals as photon generators dedicated to intense positron sources for linear colliders. An experimental investigation, using a 10 GeV…
Monte-Carlo simulation calculation have been performed for 855 MeV electrons channeling in (110) planes of a diamond single crystal. The continuum potential picture has been utilized. Both, the transverse potential and the angular…
The development of a high intensity negative ion source is part of a considerably larger activity presently undergoing at CEA Saclay in the field of high intensity linear accelerators. Preliminary studies toward the construction of a 2.45…
Atomic sized plasmonic tunnel junctions are of fundamental interest, with great promise as the smallest on-chip light sources in various optoelectronic applications. Several mechanisms of light emission in electrically driven plasmonic…
Atomic and single-molecule junctions represent the ultimate limit to the miniaturization of electrical circuits. They are also ideal platforms to test quantum transport theories that are required to describe charge and energy transfer in…
To analyze the state of injected carrier streams of different electron sources, we propose to use correlation measurements at a quantum point contact with the different sources connected via chiral edge states to the two inputs. In…
A novel variable dc-link voltage technique is proposed to reduce the traction losses for electrical drive applications. A 100-unit cascaded multilevel converter is developed to generate the variable dc-link voltage. Experimental measurement…
We present a dynamical theory which incorporates the electron-electron correlations and the effects of external magnetic fields for an electron escaping from a helium surface. Analytical expressions for the escape rate can be obtained in…
Electronic transport across n-Si-alkyl monolayer/Hg junctions is, at reverse and low forward bias, independent of alkyl chain-length from 18 down to 1 or 2 carbons! This and further recent results indicate that electron transport is…
Due to their wide band gaps, III-N materials can exhibit behaviors ranging from the semiconductor class to the dielectric class. Through an analogy between a Metal/AlGaN/AlN/GaN diode and a MOS contact, we make use of this dual nature and…
Nanodevices consisting of a quantum dot tunnel coupled to one superconducting and two normal electrodes may serve as a source of entangled electrons. As a result of crossed Andreev reflection the Cooper pair of s-wave character may be split…
Scalable trapped-ion quantum computing requires fast and reliable transport of ions through complex, segmented radiofrequency trap architectures without inducing excessive motional excitation. We present a numerical toolchain for the…