利用沟道效应正电子源特性的实验测定
加速器物理
2008-11-26 v1
摘要
数值模拟与“原理验证”实验清楚地显示了使用晶体作为专用于直线对撞机强流正电子源的光子发生器的价值。利用SPS-CERN的10 GeV次级电子束轰击轴向取向厚钨晶体的实验研究，已于2000年5月至8月间准备并实施。在简要回顾利用取向晶体中沟道效应的正电子源主要特征后，描述了实验装置。特别强调了由漂移室部分浸没于磁场中构成的正电子探测器。在入射电子能量5至40 GeV范围内，于4和8 mm晶体及混合靶中均观察到取向晶体中光子与正电子产额的增强。本文给出该实验的初步结果。
引用
@article{arxiv.physics/0008036,
title = {Experimental Determination of the Characteristics of a Positron Source Using Channeling},
author = {R. Chehab and R. Cizeron and C. Sylvia and V. Baier and K. Beloborodov and A. Bukin and S. Burdin and T. Dimova and A. Drozdetsky and V. Druzhinin and M. Dubrovin and V. Golubev and S. Serednyakov and V. Shary and V. Strakhovenko and X. Artru and M. Chevallier and D. Dauvergne and R. Kirsch and Ph. Lautesse and J-C. Poizat and J. Remillieux and A. Jejcic and P. Keppler and J. Major and L. Gatignon and G. Bochek and V. Kulibaba and N. Maslov and A. Bogdanov and A. Potylitsin and I. Vnukov},
journal= {arXiv preprint arXiv:physics/0008036},
year = {2008}
}
备注
3 pages, 6 figures, submitted to Linac2000