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相关论文: III-Nitride Nanowire Based Light Emitting Diodes o…

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This article presents the use of flexible metal foam substrates for the growth of III-nitride nanowire light emitters to tackle the inherent limitations of thin-film light emitting diodes as well as fabrication and application issues of…

应用物理 · 物理学 2020-09-07 Michael A. Mastro , Neeraj Nepal , Fritz Kub , Jennifer K. Hite , J. Kim , Charles R. Eddy

Bottom up nanowires are attractive for realizing semiconductor devices with extreme heterostructures because strain relaxation through the nanowire sidewalls allows the combination of highly lattice mismatched materials without creating…

III-nitride alloys are wide band gap semiconductors with a broad range of applications in optoelectronic devices such as light emitting diodes and laser diodes. Indium gallium nitride light emitting diodes have been successfully produced…

材料科学 · 物理学 2022-09-07 Arlinda Hill

Gallium nitride nanowires were grown on c-plane, r-plane and m-plane sapphire substrates in a showerhead metalorganic chemical vapor deposition system using nickel catalyst with trimethylgallium and ammonia as precursors. We studied the…

Light emitting diodes (LEDs) based on Gallium Nitride (GaN) have been revolutionizing various applications in lighting, displays, medical equipment, and other fields. However, their energy efficiency is still below expectations in many…

综合物理 · 物理学 2020-11-18 Joachim Piprek

The first selective growth of graphenic carbon thin films on silicon dioxide is reported. A preliminary e-beam exposure of the substrate is found to strongly affect the process of such films growth. The emphasis is placed on the influence…

材料科学 · 物理学 2015-12-24 Maxim Knyazev , Daria Sedlovets , Oleg Trofimov , Arkady Redkin

Poly(ethylene imine) functionalized carbon nanotube thin films, prepared using the vacuum filtration method, were decorated with Au nanoparticles by in situ reduction of HAuCl4 under mild conditions. These Au nanoparticles were subsequently…

材料科学 · 物理学 2008-12-16 P. K. Mohseni , G. Lawson , C. Couteau , G. Weihs , A. Adronov , R. R. LaPierre

Using nanowires for photodetection constitutes an opportunity to enhance the absorption efficiency while reducing the electrical cross-section of the device. They present interesting features like compatibility with silicon substrates,…

材料科学 · 物理学 2019-04-30 Maria Spies , Eva Monroy

Boron nitride is a promising material for nanotechnology applications due to its two-dimensional graphene-like, insulating, and highly-resistant structure. Recently it has received a lot of attention as a substrate to grow and isolate…

材料科学 · 物理学 2013-09-25 Claudio Attaccalite , Ludger Wirtz , Andrea Marini , Angel Rubio

Hybrid silicon nanowires with an integrated light-emitting segment can significantly advance nanoelectronics and nanophotonics. They would combine transport and optical characteristics in a nanoscale device, which can operate in the…

Point defects in hexagonal boron nitride have emerged as a promising quantum light source due to their bright and photostable room temperature emission. In this work, we study the incorporation of quantum emitters during chemical vapor…

Carbon nitrides have recently come into focus for photo- and thermal catalysis, both as support materials for metal nanoparticles as well as photocatalysts themselves. While many approaches for the synthesis of three-dimensional carbon…

The normal paper used in any printer is among the cheapest flexible organic materials that exist. We demonstrate that we can print on paper high-frequency circuits tunable with an applied dc voltage. This is possible with the help of an ink…

介观与纳米尺度物理 · 物理学 2015-05-13 M. Dragoman , E. Flahaut , D. Dragoman , M. Al Ahmad , R. Plana

Optoelectronic measurements of carbon nanotube transistors have shown a wide variety of sensitivites to the incident light. Direct photocurrent processes compete with a number of extrinsic mechanisms. Here we show that visible light…

材料科学 · 物理学 2015-05-13 Matthew S. Marcus , J. M. Simmons , O. M. Castellini , R. J. Hamers , M. A. Eriksson

Light emitting diodes (LEDs) were fabricated using ensembles of free-standing (In,Ga)N/GaN nanowires (NWs) grown on Si substrates in the self-induced growth mode by molecular beam epitaxy. Electron beam induced current analysis,…

Very recently, it has been shown that an abundant material, polymeric carbon nitride, can produce hydrogen from water under visible-light irradiation in the presence of a sacrificial donor [1]. We will present here the preparation and…

We have studied nickel, gold, and ferritin coatings on catalytically grown multiwall carbon nanotubes, as well as the generation of secondary nanotubes by resubmitting the decorated nanotubes to the chemical vapor deposition process. Nickel…

材料科学 · 物理学 2015-07-20 Christian Klinke , Erik Delvigne , Johannes V. Barth , Klaus Kern

We report a significant and persistent enhancement of the conductivity in free-standing non intentionnaly doped InAs nanowires upon irradiation in ultra high vacuum. Combining four-point probe transport measurements performed on nanowires…

介观与纳米尺度物理 · 物理学 2013-07-10 Corentin Durand , Maxime Berthe , Younes Makoudi , Jean-Philippe Nys , Renaud Leturcq , Philippe Caroff , Bruno Grandidier

The miniaturization of diagnostic devices that exploit optical detection schemes requires the design of light-sources combining small size, high performance for effective excitation of chromophores, and mechanical flexibility for easy…

The fabrication of three-dimensional (3D) nanostructures is of great interest to many areas of nanotechnology currently challenged by fundamental limitations of conventional lithography. One of the most promising direct-write methods for 3D…

介观与纳米尺度物理 · 物理学 2020-01-07 L. Skoric , D. Sanz-Hernández , F. Meng , C. Donnelly , S. Merino-Aceituno , A. Fernández-Pacheco
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