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相关论文: Strain fields in twisted bilayer graphene

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Twisted bilayer graphene (TBG) exhibits a wide range of intriguing physical properties, such as superconductivity, ferromagnetism, and superlubricity. Depending on the twist angle, periodic moir\'e superlattices form in twisted bilayer…

介观与纳米尺度物理 · 物理学 2022-06-07 Vahid Morovati , Zhiming Xue , Kenneth M. Liechti , Rui Huang

Van der Waals heterostructures obtained by artificially stacking two-dimensional crystals represent the frontier of material engineering, demonstrating properties superior to those of the starting materials. Fine control of the interlayer…

The interplay of twist and strain in bilayer graphene enables the formation of moir\'e patterns and narrow bands that host correlated and topological phases. While magic-angle twisted bilayer graphene has been widely studied, strain…

介观与纳米尺度物理 · 物理学 2026-03-10 Federico Escudero , Dong Wang , Pierre A. Pantaleón , Shengjun Yuan , Francisco Guinea , Zhen Zhan

In twisted bilayer graphene (TBG) devices, local strains frequently coexist and intertwine with the twist-angle-dependent moir\'e superlattice, significantly influencing the electronic properties of TBG, yet their combined effects remain…

Strain, both naturally occurring and deliberately engineered, can have a considerable effect on the structural and electronic properties of 2D and layered materials. Uniaxial or biaxial heterostrain modifies the stacking arrangement of…

材料科学 · 物理学 2022-10-19 Nina C. Georgoulea , Stephen R. Power , Nuala M. Caffrey

The study of moir\'e engineering started with the advent of van der Waals heterostructures in which stacking two-dimensional layers with different lattice constants leads to a moir\'e pattern controlling their electronic properties. The…

介观与纳米尺度物理 · 物理学 2023-08-28 F. Mesple , N. R. Walet , G. Trambly de Laissardière , F. Guinea , D. Dosenovic , H. Okuno , C. Paillet , A. Michon , C. Chapelier , V. T. Renard

We report deterministic control over moir\'e superlattice interference pattern in twisted bilayer graphene by implementing designable device-level heterostrain with process-induced strain engineering, a widely used technique in industrial…

Experiments on bilayer graphene unveiled a fascinating realization of stacking disorder where triangular domains with well-defined Bernal stacking are delimited by a hexagonal network of strain solitons. Here we show by means of numerical…

介观与纳米尺度物理 · 物理学 2018-04-13 Fernando Gargiulo , Oleg V. Yazyev

We develop a theory for a qualitatively new type of disorder in condensed matter systems arising from local twist-angle fluctuations in two strongly coupled van der Waals monolayers twisted with respect to each other to create a flat band…

无序系统与神经网络 · 物理学 2020-06-30 Justin H. Wilson , Yixing Fu , S. Das Sarma , J. H. Pixley

Van der Waals materials composed of stacks of individual atomic layers have attracted considerable attention due to their exotic electronic properties that can be altered by, for example, manipulating the twist angle of bilayer materials or…

材料科学 · 物理学 2021-05-14 Michael J Zachman , Jacob Madsen , Xiang Zhang , Pulickel M Ajayan , Toma Susi , Miaofang Chi

A unique attribute of atomically thin quantum materials is the in-situ tunability of their electronic band structure by externally controllable parameters like electrostatic doping, electric field, strain, electron interactions, and…

Continuum atomic relaxation models for twisted bilayer graphene involve minimization of the sum of intralayer elastic energy and interlayer adhesion energy. The elastic energy favors a rigid twist i.e. no distortion in the twisted honeycomb…

强关联电子 · 物理学 2025-10-10 Jian Kang , Oskar Vafek

We demonstrate that stacking layered materials allows a novel type of strain engineering where each layer is strained independently, which we call heterostrain. We combine detailed structural and spectroscopic measurements with…

介观与纳米尺度物理 · 物理学 2018-04-18 L. Huder , A. Artaud , T. Le Quang , G. Trambly de Laissardière , A. G. M. Jansen , G. Lapertot , C. Chapelier , V. T. Renard

The recently observed unconventional ferroelectricity in AB bilayer graphene sandwiched by hexagonal Boron Nitride (hBN) presents a new platform to manipulate correlated phases in multilayered van der Waals heterostructures. We present a…

介观与纳米尺度物理 · 物理学 2022-11-30 Ziyan Zhu , Stephen Carr , Qiong Ma , Efthimios Kaxiras

By means of atomistic tight-binding calculations, we investigate the effects of uniaxial strain on the electronic bandstructure of twisted graphene bilayer. We find that the bandstructure is dramatically deformed and the degeneracy of the…

介观与纳米尺度物理 · 物理学 2015-07-13 Viet Hung Nguyen , Philippe Dollfus

In two-dimensional (2D) twisted bilayers, the van der Waals (vdW) interlayer interaction introduces atomic-scale reconstruction at interface by locally rotating lattice to form strain-field vortex networks in their moir\'e superlattice.…

介观与纳米尺度物理 · 物理学 2021-12-23 Ya-Ning Ren , Yi-Wen Liu , Chao Yan , Lin He

We present a theoretical study of the effects of heterostrain and lattice relaxation on the optical conductivity of twisted bilayer graphene near the magic angle, based on the band structures obtained from a continuum model. We find that…

介观与纳米尺度物理 · 物理学 2021-07-07 Zhen-Bing Dai , Yan He , Zhiqiang Li

Van der Waals layered materials with well-defined twist angles between the crystal lattices of individual layers have attracted increasing attention due to the emergence of unexpected material properties. As many properties critically…

Several numerical studies have shown that the electronic properties of twisted bilayers of graphene (TBLG) and transition metal dichalcogenides (TMDs) are tunable by strain engineering of the stacking layers. In particular, the flatness of…

介观与纳米尺度物理 · 物理学 2023-07-24 Marwa Mannaï , Sonia Haddad

Here we study the evolution of local electronic properties of a twisted graphene bilayer induced by a strain and a high curvature. The strain and curvature strongly affect the local band structures of the twisted graphene bilayer; the…

介观与纳米尺度物理 · 物理学 2015-06-05 Wei Yan , Wen-Yu He , Zhao-Dong Chu , Mengxi Liu , Lan Meng , Rui-Fen Dou , Yanfeng Zhang , Zhongfan Liu , Jia-Cai Nie , Lin He
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