相关论文: Adjustable quantum interference oscillations in Sb…
Three-dimensional topological insulators are characterized by the presence of a bandgap in their bulk and gapless Dirac fermions at their surfaces. New physical phenomena originating from the presence of the Dirac fermions are predicted to…
External control over the electron and hole wavefunctions geometry and topology is investigated in a p-i-n diode embedding a dot-in-a-well InAs/GaAsSb quantum structure with type II band alignment. We find highly tunable exciton dipole…
In magnetic topological insulators (TIs), the interplay between magnetic order and nontrivial topology can induce fascinating topological quantum phenomena, such as the quantum anomalous Hall effect, chiral Majorana fermions and axion…
For quantum electronics, the possibility to finely tune the properties of magnetic topological insulators (TIs) is a key issue. We studied solid solutions between two isostructural Z$_2$ TIs, magnetic MnBi$_2$Te$_4$ and nonmagnetic…
We report an experimental study of electron transport properties of MnSe/(Bi,Sb)2Te3 heterostructures, in which MnSe is an antiferromagnetic insulator, and (Bi,Sb)2Te3 is a three-dimensional topological insulator (TI). Strong magnetic…
The band structure, intra- and interband scattering processes of the electrons at the surface of a bismuth-bilayer on Bi$_2$Se$_3$ have been experimentally investigated by low-temperature Fourier-transform scanning tunneling spectroscopy.…
A newly discovered topological insulator (AgxPb1-xSe)5(Bi2Se3)3m, m=2, has a band gap of 0.5 eV, the largest value ever reported in topological insulators (TIs). We present a magnetoconductivity study of the Dirac electrons of this compound…
Anomalous resistance upturn and downturn have been observed on the topological insulator (TI) surface in superconductor-TI (NbN-Bi1.95Sb0.05Se3) heterostructures at ~ mm length scales away from the interface. Magnetotransport measurements…
Atomically precise graphene nanoribbons (GNRs) have emerged as promising candidates for nanoelectronic applications due to their widely tunable energy band gaps resulting from lateral quantum confinement and edge effects. Here we report on…
Contacts between high critical field superconductors and semiconductor nanowires are important in the context of topological quantum circuits in which superconductivity must be sustained to high magnetic fields. Here we demonstrate…
Different types of angular magnetoresistance oscillations in quasi-one-dimensional layered materials, such as organic conductors (TMTSF)2X, are explained in terms of Aharonov-Bohm interference in interlayer electron tunneling. A…
We report the growth of single-crystalline Bi2Se3 nanoribbons with lengths up to several millimeters via a catalyst-free physical vapor deposition method. Scanning transmission electron microscopy analysis reveals that the nanoribbons grow…
Metal-semiconductor interfaces play a central role in micro and nano-electronic devices as heat dissipation or temperature drop across these interfaces can significantly affect device performance. Prediction of accurate thermal boundary…
Three-dimensional topological insulators (TIs) attract much attention due to its topologically protected Dirac surface states. Doping into TIs or their proximity with normal superconductors can promote the realization of topological…
(Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ alloys are non-degenerate topological insulators (TIs) whose Dirac point (DP) can be tuned within the bulk bandgap by varying the composition, effectively reducing bulk conduction while allowing surface carrier…
Recently, Kayyalha et al. (2019 Phys. Rev. Lett. 122 047003) reported on anomalous enhancement of the self-field critical currents, Ic(sf,T), at low temperatures in Nb/BiSbTeSe2-nanoribbon/Nb Josephson junctions. The enhancement was…
Magnetic topological insulators (TIs) provide a highly tunable platform for engineering quantum states that emerge from the interplay between topology and magnetism. In this review article, we summarize experimental progress over the past…
When a topological insulator (TI) is in contact with a ferromagnet, both time reversal and inversion symmetries are broken at the interface. An energy gap is formed at the TI surface, and its electrons gain a net magnetic moment through…
We study transport across a time-dependent magnetic barrier present on the surface of a three-dimensional topological insulator. We show that such a barrier can be implemented for Dirac electrons on the surface of a three-dimensional…
Three dimensional topological insulators embody a newly discovered state of matter characterized by conducting spin-momentum locked surface states that span the bulk band gap as demonstrated via spin-resolved ARPES measurements . This…