相关论文: Thickness-dependent electron momentum relaxation t…
Terahertz time-domain conductivity measurements in 2 to 100 nm thick iron films resolve the femtosecond time delay between applied electric fields and resulting currents. This response time decreases for thinner metal films. The macroscopic…
The magnetic dynamics of low-dimensional iron ion chains have been studied with regards to the tunable finite-sized chain length using iron phthalocyanine thin films. The deposition temperature varies the diffusion length during thin film…
Magnetic relaxation and critical current density have been measured on a $MgB_2$ thin film in a wide region of temperature with the magnetic field up to 8 T. The irreversibility line has also been determined. It is found that the relaxation…
Shrinking CMOS interconnect dimensions to the nanometer scale intensifies electron scattering at surfaces, interfaces, and grain boundaries, causing severe conductivity loss and challenging copper-based designs. Here we present a…
It is shown that the conductance relaxations observed in electrical field effect measurements on granular Al films are the sum of two contributions. One is sensitive to gate voltage changes and gives the already reported anomalous…
We present field effect measurements on discontinuous 2D thin films which are composed of a sub monolayer of nano-grains of Au, Ni, Ag or Al. Like other electron glasses these systems exhibit slow conductance relaxation and memory effects.…
Spin relaxation in the ultrathin metallic films of stacked microelectronic devices is investigated on the basis of a modified Landau-Lifshitz equation of micromagnetic dynamics in which the damping torque is treated as originating from the…
We have recently found in insulating granular Al thin film a new experimental feature (Delahaye et al., Phys. Rev. Lett. 106, 186602, 2011), namely the existence of a conductance relaxation that is not sensitive to gate voltage changes.…
Electron transport is studied in surface oxidized single-crystal copper thin films with a thickness of up to 5.6 nm by applying density functional theory and density functional tight binding methods to determine electron transport…
A theory for calculating spin wave relaxation times based on the magnon-electron interaction is developed. The theory incorporates a thin film geometry and is valid for a large range of magnon frequencies and wave vectors. For high…
The performance of low temperature detectors utilizing thermal effects is determined by their energy relaxation properties. Usually, heat transport experiments in mesoscopic structures are carried out in the steady-state, where temperature…
We propose a model for the description of the transport properties of metallic films on a large scale of slab thickness. This model is based on solving the linearized Boltzmann equation in relaxation-time approximation using {\it ab initio}…
The near threshold "soft breakdown" measurements of PVC films conductivity are investigated. In a wide range of external electric field strength for various rather thick (>20 mkm) PVC films the resistance shows strong nonlinearity and seems…
Transient reflectivity measurements of thin films, ranging from 6 to 40 nm in thickness, of the topological insulator Bi2Se3 revealed a strong dependence of the carrier relaxation time on the film thickness. For thicker films the relaxation…
The analysis of quantum corrections to magnetoconductivity of thin Au films responsible for by the effect of weak electron localization has made it possible to determine the temperature dependences of electron phase relaxation time in the…
The effect of thickness on the width of the percolation threshold in metal-dielectric composite films was examined. The distribution of current intensities through cubic networks of metal and dielectric components was determined using…
We report on the direct measurement of the electron-phonon relaxation time, {\tau}eph, in disordered TiN films. Measured values of {\tau}eph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T-3…
In this work, we combine conventional linear response time-domain THz spectroscopy with non-linear THz-pump THz-probe techniques to study metallic strained thin films of $\mathrm{Ca}_2\mathrm{RuO}_4$, which undergo a transition into a…
In this paper we report the observation of curent induced change of resistance of thin metallic oxide films. The resistance changes at a very low current (current density $J \geq 10^{3}$ A/cm$^{2}$). We find that the time dependence…
We have measured directly the thermal conductance between electrons and phonons in ultra-thin Hf and Ti films at millikelvin temperatures. The experimental data indicate that electron-phonon coupling in these films is significantly…