相关论文: Helium effects and bubbles formation in irradiated…

The binary alloy of titanium-tungsten (TiW) is an established diffusion barrier in high-power semiconductor devices, owing to its ability to suppress the diffusion of copper from the metallisation scheme into the surrounding silicon…

Integration of Samarium Cobalt hard magnets on silicon requires buffer/protective layers that can enhance the magnetic properties of the magnet while preserving its structure and chemical composition after post-annealing treatments needed…

We studied the thermal conductivity of superfluid $^3$He in a 2.5 mm effective diameter and 0.15 m long channel connecting the two volumes of our experimental assembly. The main volume contained pure solid $^4$He, pure liquid $^3$He and…

By means of fluctuationnal electrodynamics, we calculate radiative heat flux between two pla-nar materials respectively made of SiC and SiO2. More specifically, we focus on a first (direct) situation where one of the two materials (for…

A high-intensity proton beam exposure with 181 MeV energy has been conducted at Brookhaven Linac Isotope Producer facility on various material specimens for accelerator targetry applications, including titanium alloys as a beam window…

Superlattices (SLs) consisted of alternating Bi2Se3 and In2Se3 layers are grown on Si(111) by molecular-beam epitaxy. Bi2Se3, a three-dimensional topological insulator (TI), showed good chemical and structural compatibility with In2Se3, a…

Precipitates are main microstructural features to provide high temperature creep strength and radiation resistance in structural materials for fusion energy systems. However, the mechanisms of precipitate stability under irradiation in…

Metal atoms and small clusters introduced into superfluid helium (He II) concentrate there in quantized vortices to form (by further coagulation) the thin nanowires. The nanowires' thickness and structure are well predicted by a…

We present resistivity measurements of Mott insulator NiS2 single crystals after heat treatment. We find a strong increase of the low temperature resistivity that relaxes back towards the pristine behaviour over several days with a time…

We have performed a detailed analysis of the electron temperature and density in the the Ring Nebula using the calibrated HST WFC3 images described in the preceding paper. The electron temperature (Te) determined from [N II] and [O III]…

La3Co4Sn13 is a superconducting material with transition temperature at Tc = 2.70 K, which presents a superlattice structural transition at T* ~ 150 K, a common feature for this class of compounds. However, for this material, it is not…

Metal-semiconductor interfaces play a central role in micro and nano-electronic devices as heat dissipation or temperature drop across these interfaces can significantly affect device performance. Prediction of accurate thermal boundary…

Iron oxide nano particles with nominal Fe2O3 stoichiometry were synthesized by a wet, soft chemical method with the heat treatment temperatures from 250{\deg}C to 900{\deg}C in air. The variation in the structural properties of the nano…

Focused ion beam milling allows manipulation of the shape and size of nanostructures to create geometries potentially useful for opto-electronics, thermoelectrics, and quantum computing. We focus on using the ion beam to control the…

Laser ablation through liquid is an important process that have to be studied for applications which use laser ablation in liquid (LAL) and laser shock peening (LSP). LAL is employed for production of suspensions of nanoparticles, while LSP…

The interactions of atomic and molecular hydrogen with bare interstellar dust grain surfaces are important for understanding H2 formation at relatively high temperatures (>20 K). We investigate the diffusion of physisorbed H atoms and the…

We have investigated the effect that dissipation may have on the cavitation process in normal liquid $^3$He. Our results indicate that a rather small dissipation decreases sizeably the quantum-to-thermal crossover temperature $T^*$ for…

In this paper, we report the effect of filament radius and filament resistivity on the saturated temperature of ZnO, TiO2, WO3 and HfO2 Resistive Random Access Memory (RRAM) devices. We resort to the thermal reaction model of RRAM for the…

The morphological evolution and the effect of growth temperature on size, orientation and composition of molecular beam epitaxy grown Ge-Si islands on Si(5 5 12) surfaces have been investigated in the temperature range from room temperature…

Pure Topological Insulating materials preserve a unique electronic state comprising of bulk insulating gap and conducting surface states. Here we use bulk Bi2Se3 single crystals possessing Se vacancy defects as a prototype topological…