相关论文: High-Frequency GaAs Optomechanical Bullseye Resona…
A hybrid device comprising a (Al)GaAs quantum dot heterostructure and a LiNbO$_3$ surface acoustic wave resonator is fabricated by heterointegration. High acoustic quality factors $Q>4000$ are demonstrated for an operation frequency…
Type-II W-lasers have made an important contribution to the development of mid-infrared laser diodes. In this paper, we show that a similar approach can yield high performance lasers in the optical communications wavelength range.…
We present the first observation of optomechanical coupling in ultra-high Q crystalline whispering-gallery-mode (WGM) resonators. The high purity of the crystalline material enables optical quality factors in excess of 10^{10} and finesse…
Gallium-nitride (GaN) is a promising material platform for integrated electro-optic devices due to its wide direct bandgap, pronounced nonlinearities and high optical damage threshold. Low-loss ridge waveguides in GaN layers were recently…
Integrated quantum photonics is a promising approach for future practical and large-scale quantum information processing technologies, with the prospect of on-chip generation, manipulation and measurement of complex quantum states of light.…
In this work, we experimentally investigate the frequency limit of Hall effect sensor designs based on a 2 dimensional electron gas (2DEG) gallium arsenide/aluminum gallium arsenide (GaAs/AlGaAs) heterostructure. The frequency limit is…
We adopt the Ramsey's method of separated oscillatory fields to study coherences of the mechanical system in an optomechanical resonator. The high resolution Ramsey fringes are observed in the emission optical field, when two pulses…
The combination of nonlinear and integrated photonics has recently seen a surge with Kerr frequency comb generation in micro-resonators as the most significant achievement. Efficient nonlinear photonic chips have myriad applications…
High-efficient heat dissipation plays critical role for high-power-density electronics. Experimental synthesis of ultrahigh thermal conductivity boron arsenide (BAs, 1300 W m-1K-1) cooling substrates into the wide-bandgap semiconductor of…
Surface acoustic wave (SAW) resonators provide a compact platform for confining microwave-frequency phonons and are widely used in radio-frequency technologies, but their operation at gigahertz frequencies and cryogenic temperatures remains…
The interaction of optical and mechanical modes in nanoscale optomechanical systems has been widely studied for applications ranging from sensing to quantum information science. Here, we develop a platform for cavity optomechanical circuits…
In this report, certain claims regarding the design criteria and characterizations of plasmonic bullseye (BE) structures are investigated. Does the matching of the grating's periodicity to the wavelength of surface waves results in a strong…
We present our results for simultaneous measurement of the refractive indices of gallium arsenide (GaAs) and aluminum gallium arsenide (Al$_\mathrm{x}$Ga$_\mathrm{1-x}$As) from $2.0$ to $7.1\,\mathrm{\mu m}$ ($5000$ to…
We report first studies of long-lived oscillations in optical pump-probe measurements on GaSb-GaAs heterostructures. The oscillations arise from a photogenerated coherent longitudinal acoustic phonon wave, which travels from the top surface…
Validating material performance in electrical devices is crucial to product development. For Gallium Nitride (GaN) devices, evaluating material factors such as defects, dopant concentration, and overall production quality is essential to…
In the last decade, remarkable advances in integrated photonic technologies have enabled table-top experiments and instrumentation to be scaled down to compact chips with significant reduction in size, weight, power consumption, and cost.…
Two-dimensional (2D) layered materials, transition metal dichalcogenides and black phosphorus, have attracted much interest from the viewpoints of fundamental physics and device applications. The establishment of new functionalities in…
Electrically tunable devices contribute significantly to key functions of photonics integrated circuits. Here, we demonstrate the tuning of the optical index of refraction based on hybrid integration of multi-layered anisotropic GaGeTe on a…
Gallium antimonide (GaSb) is a key material for near- and mid-infrared photonics, enabling high-performance laser architectures and detectors. Design and simulation of such devices depend on accurate optical material data, especially the…
Radiation-induced defects can have a significant impact on the longevity and performance of semiconductor devices. We present an Atomistically Informed Device Engineering (AIDE) method that integrates first-principles defect properties and…