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Graphene phonons are measured as a function of electron doping via the addition of potassium adatoms. In the low doping regime, the in-plane carbon G-peak hardens and narrows with increasing doping, analogous to the trend seen in graphene…

介观与纳米尺度物理 · 物理学 2015-03-17 C. A. Howard , M. P. M. Dean , F. Withers

We study the effects of metallic doping on the electronic properties of graphene using density functional theory in the local density approximation in the presence of a local charging energy (LDA+U). The electronic properties are sensitive…

材料科学 · 物理学 2009-11-13 B. Uchoa , C. -Y. Lin , A. H. Castro Neto

We performed electron energy-loss spectroscopy studies in order to get a deeper insight into the electronic properties of potassium intercalated picene, a recently discovered superconductor. A comparison of the loss function of the undoped…

超导电性 · 物理学 2011-04-05 Friedrich Roth , Benjamin Mahns , Bernd Büchner , Martin Knupfer

We have investigated the evolution of the temperature-dependent conductivity of electron-doped pentacene (PEN) thin films, in which the electron density is controlled by means of potassium (K) intercalation. We find that the conductivity is…

强关联电子 · 物理学 2007-05-23 M. F. Craciun , S. Rogge , A. F. Morpurgo

We probe the local inhomogeneities of the electronic properties of graphene at the nanoscale using scanning probe microscopy techniques. First, we focus on the study of the electronic inhomogeneities caused by the graphene-substrate…

介观与纳米尺度物理 · 物理学 2012-10-16 A. Castellanos-Gomez , Arramel , M. Wojtaszek , R. H. M. Smit , N. Tombros , N. Agraït , B. J. van Wees , G. Rubio-Bollinger

We report significant changes of optical conductivity in single layer graphene induced by mild oxygen plasma exposure, and explore the interplay between carrier doping, disorder, and many-body interactions from their signatures in the…

Graphene has attracted great attentions since its first discovery in 2004. Various approaches have been proposed to control its physical and electronic properties. Here, we report that graphene based intercalation compounds is an efficient…

材料科学 · 物理学 2010-11-04 Da Zhan , Li Sun , Zhenhua Ni , Lei Liu , Xiaofeng Fan , Yingying Wang , Ting Yu , Yeng Ming Lam , Wei Huang , Zexiang Shen

Magnesium intercalated 'quasi-freestanding' bilayer graphene on 6H-SiC(0001) (Mg-QFSBLG) has many favorable properties (e.g., highly n-type doped, relatively stable in ambient conditions). However, intercalation of Mg underneath monolayer…

We have performed scanning gate microscopy (SGM) on graphene field effect transistors (GFET), using a biased metallic nanowire coated with a dielectric layer as a contact mode tip and local top gate. Electrical transport through graphene at…

Harnessing electronic excitations involving coherent coupling to bosonic modes is essential for the design and control of emergent phenomena in quantum materials [1]. In situations where charge carriers induce a lattice distortion due to…

Controlling the type and density of charge carriers by doping is the key step for developing graphene electronics. However, direct doping of graphene is rather a challenge. Based on first-principles calculations, a concept of overcoming…

介观与纳米尺度物理 · 物理学 2011-07-26 Bing Huang , Hongjun Xiang , Su-Huai Wei

The interband and intraband conductivities of doped graphene were theoretically investigated beyond the linear response. The new dependences of induced currents on frequency and amplitude of external electric field, the graphene temperature…

介观与纳米尺度物理 · 物理学 2013-08-19 B. M. Ruvinskii , M. A. Ruvinskii

High quality epitaxial graphene films can be applied as templates for tailoring graphene-substrate interfaces that allow for precise control of the charge carrier behavior in graphene through doping and many-body effects. By combining…

The unique optical properties of graphene, with broadband absorption and ultrafast response, make it a critical component of optoelectronic and spintronic devices. Using time-resolved momentum microscopy with high data rate and high dynamic…

Controlling doping is key to optimizing graphene for high-speed electronic and optoelectronic devices. However, its impact on non-equilibrium carrier lifetimes remains debated. Here, we systematically tune the doping level of…

Since lattice strain and charge density affect various material properties of graphene, a reliable and efficient method is required for quantification of the two variables. While Raman spectroscopy is sensitive and non-destructive, its…

介观与纳米尺度物理 · 物理学 2020-08-10 Gwanghyen Ahn , Sunmin Ryu

We report on detailed microscopy studies of graphene and few-layer-graphene produced by mechanical exfoliation on various semi-conducting substrates. We demonstrate the possibility to prepare and analyze graphene on (001)-GaAs, manganese…

材料科学 · 物理学 2009-11-13 U. Stöberl , U. Wurstbauer , W. Wegscheider , D. Weiss , J. Eroms

Thin layers of black phosphorus present an ideal combination of a 2D material with a tunable direct bandgap and high carrier mobility. However the material suffers from degradation in ambient conditions due to an oxidation reaction which…

Recently the graphene/SiC interface has emerged as a versatile platform for the epitaxy of otherwise unstable, monoelemental, two-dimensional (2D) layers via intercalation. Intrinsically capped into a van der Waals heterostructure with…

介观与纳米尺度物理 · 物理学 2022-06-23 Philipp Rosenzweig , Hrag Karakachian , Dmitry Marchenko , Ulrich Starke

We investigate molecular adsorption doping by electron withdrawing NO2 and electron donating NH3 on epitaxial graphene grown on C-face SiC substrates. Amperometric measurements show conductance changes upon introduction of molecular…

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