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相关论文: Evidence of hydrogen diffusion in n-type GaN

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Validating material performance in electrical devices is crucial to product development. For Gallium Nitride (GaN) devices, evaluating material factors such as defects, dopant concentration, and overall production quality is essential to…

We study the adsorption behavior of Ga on (0001) GaN surfaces combining experimental specular reflection high-energy electron diffraction with theoretical investigations in the framework of a kinetic model for adsorption and ab initio…

材料科学 · 物理学 2009-11-10 C. Adelmann , J. Brault , G. Mula , B. Daudin , L. Lymperakis , J. Neugebauer

The diffusion length of minority carriers L p,n is an important characterisation parameter in semiconductor materials and is of particular interest when constructing devices such as solar cells (Hovel 1975), double hetero junction lasers…

材料科学 · 物理学 2007-05-23 D. Alexiev , D. A. Prokopovich , L. Mo

Accessing unexplored conditions in crystal growth often reveals remarkable surprises and new regimes of physical behavior. In this work, performing molecular beam epitaxy of the technologically important superconductor NbN at temperatures…

We present spectroscopic observations of ionized gas in the disk-halo regions of five edge-on galaxies, covering a wavelength range from [OII] 3727A to [SII] 6716.4A. The inclusion of the [OII] emission provides additional constraints on…

天体物理学 · 物理学 2009-11-07 B. Otte , J. S. Gallagher , R. J. Reynolds

Propagation and relaxation of nonequilibrium quasiparticles in superconductors are of key importance for functioning of numerous nanoscale devices, enabling operation of some of them, and limiting the performance of the others. The…

超导电性 · 物理学 2020-10-21 Maciej Zgirski , Marek Foltyn , Alexander Savin , Andrii Naumov , Konrad Norowski

The phase behavior of poly (N-isopropylacrylamide) nanoparticles dispersed in aqueous medium is investigated as a function of temperature using static and dynamic light scattering techniques. The diameter, d of the particles, as determined…

软凝聚态物质 · 物理学 2008-06-11 J. Brijitta , B. V. R. Tata , T. Kaliyappan

High entropy alloys (HEAs) have emerged as a new class of multicomponent materials, which have potential for high temperature applications. Phase stability and creep deformation, two key selection criteria for high temperature materials,…

材料科学 · 物理学 2017-07-14 M. Vaidya , K. G. Pradeep , B. S. Murty , G. Wilde , S. V. Divinski

Growth kinetics of AlGaN in NH3 MBE under significant Ga desorption was studied. It was found that the addition of gallium stimulates 2D growth and provides better morphology of films compared to pure AlN. The effect was experimentally…

We reveal a dramatic departure of electron thermodiffusion in solids relative to the commonly accepted picture of the ideal free-electron gas model. In particular, we show that the interaction with the lattice and impurities, combined with…

介观与纳米尺度物理 · 物理学 2020-10-28 Deng Pan , Hongxing Xu , F. Javier García de Abajo

To contemplate an alternative approach for the minimization of diffusion at high temperature depositions, present findings impart viability of room-temperature deposited reactively sputtered ScN thin film samples. The adopted room…

The HIFI instrument on board the Herschel Space Observatory has been used to observe interstellar nitrogen hydrides along the sight-line towards G10.6-0.4 in order to improve our understanding of the interstellar chemistry of nitrogen. We…

Cubic GaN layers were grown by plasma-assisted molecular beam epitaxy on 3C-SiC (001)substrates. In situ reflection high energy electron diffraction was used to quantitatively determine the Ga coverage of the GaN surface during growth.…

材料科学 · 物理学 2007-05-23 J. Schoermann , S. Potthast , D. J. As , K. Lischka

High-energy-resolution GaN $\alpha$-particle detectors have significant potential for space radiation, nuclear instrumentation, and harsh-environment applications. However, existing GaN $\alpha$-particle detectors still face several key…

Cubic (zinc-blende) Ga1-xMnxN layers were grown by plasma-assisted molecular beam epitaxy on GaAs (001) substrates. Some of the structures also contained cubic AlN buffer layers. Auger Electron Spectroscopy and Secondary Ion Mass…

Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, we report the growth of ultrawide-bandgap boron nitride (BN) thin films on wide-bandgap gallium nitride (GaN) by…

Supercontinua are broadband spectra that are essential to optical spectroscopy, sensing, imaging, and metrology. They are generated from ultrashort laser pulses through nonlinear frequency conversion in fibers, bulk media, and…

Understanding diffusion of large solutes such as hydrogen and lithium in solids is of paramount importance for energy storage in metal hydrides and advanced batteries. Due to its high gravimetric and volumetric densities, magnesium is a…

应用物理 · 物理学 2021-05-05 Xiaoyang Duan , Ronald Griessen , Rinke J. Wijngaarden , Simon Kamin , Na Liu

The 21 cm hyperfine transition of the atomic hydrogen (HI) in ground state is a powerful probe of the neutral gas content of the universe. This radio frequency transition has been used routinely for decades to observe, both in emission and…

星系天体物理 · 物理学 2019-11-26 Preetha Saha , Nirupam Roy , Mukul Bhattacharya

Optical heating of plasmonic nanostructures is a critical challenge in nanoscale systems. Although plasmonic effects enable enhanced optical functionalities, the associated temperature rise can degrade performance in heat-sensitive…

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