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The outstanding transport properties expected at the edge of two-dimensional time-reversal invariant topological insulators have proven to be challenging to realize experimentally, and have so far only been demonstrated in very short…

介观与纳米尺度物理 · 物理学 2020-04-06 Luca Vannucci , Thomas Olsen , Kristian S. Thygesen

Three dimensional topological insulator crystals consist of an insulating bulk enclosed by metallic surfaces, and detailed theoretical predictions about the surface state band topology and spin texture are available. While several…

Two-dimensional (2D) topological electronic insulators are known to give rise to gapless edge modes, which underlie low energy dynamics, including electrical and thermal transport. This has been thoroughly investigated in the context of…

介观与纳米尺度物理 · 物理学 2022-05-10 Udit Khanna , Yuval Gefen , Ora Entin-Wohlman , Amnon Aharony

We investigate the effects of magnetic and nonmagnetic impurities on the two-dimensional surface states of three-dimensional topological insulators (TIs). Modeling weak and strong TIs using a generic four-band Hamiltonian, which allows for…

介观与纳米尺度物理 · 物理学 2016-02-26 Andreas Pieper , Holger Fehske

To harness the true potential of topological insulators as quantum materials for information processing, it is imperative to maximise topological surface state conduction, while simulateneously improving their quantum coherence. However,…

介观与纳米尺度物理 · 物理学 2018-08-21 Abhishek Banerjee , R. Ganesan , P. S. Anil Kumar

Topological insulator (TI) is an exciting discovery because of its robustness against disorder and interactions. Recently, higher-order TIs have been attracting increasing attention, because they host 1D topologically-protected hinge states…

介观与纳米尺度物理 · 物理学 2021-10-27 Peng-Lu Zhao , Xiao-Bin Qiang , Hai-Zhou Lu , X. C. Xie

Two-dimensional (2D) topological insulators (TIs), a new state of quantum matter, are promising for achieving the low-power-consuming electronic devices owning to the remarkable robustness of their conducting edge states against…

材料科学 · 物理学 2016-11-15 Yandong Ma , Liangzhi Kou , Ying Dai , Thomas Heine

Topological insulators are novel quantum materials with metallic surface transport, but insulating bulk behavior. Often, topological insulators are dominated by bulk contributions due to defect induced bulk carriers, making it difficult to…

Hybrid superconductor-topological insulator (TI) nanostructures constitute a promising materials platform for exploring proximity-induced superconductivity in systems with topologically protected surface states. A key obstacle has been the…

Bi2Se3 is theoretically predicted1 2and experimentally observed2,3 to be a three dimensional topological insulator. For possible applications, it is important to understand the electronic structure of the planar device. In this work,…

Topological insulator (TI) represents an unconventional quantum phase of matter with insulating bulk bandgap and metallic surface states. Recent theoretical calculations and photoemission spectroscopy measurements show that Group V-VI…

介观与纳米尺度物理 · 物理学 2010-07-09 Desheng Kong , Wenhui Dang , Judy J. Cha , Hui Li , Stefan Meister , Hailin Peng , Zhongfan Liu , Yi Cui

Recently, the impact of disorder on topological properties has attracted significant attention in photonics, especially the intriguing disorder-induced topological phase transitions in photonic topological Anderson insulators (PTAIs).…

光学 · 物理学 2025-01-22 Zhe Li , Ziming Chen , Deyang Kong , Yongzhuo Li , Kaiyu Cui , Xue Feng , Yidong Huang

This study investigates the influence of indium doping on the defect states in (Bi0.3Sb0.7)2Te3 (BST) ternary topological insulators. Thin (10 nm) and thick (60 nm) films of pristine BST and indium-doped BST (In0.14(Bi0.3Sb0.7)1.86Te3) were…

材料科学 · 物理学 2025-08-12 Kanav Sharma , Ritam Banerjee , Anuvab Nandi , Radha Krishna Gopal , Chiranjib Mitra

Hybrid superconductor/semiconductor devices constitute a powerful platform to investigate the emergence of new topological state of matter. Among all possible semiconductor materials, InAs represents a promising choice, owing to its high…

We report the composition and gate voltage induced tuning of transport properties in chemically synthesized Bi2(Te1-xSex)3 nanoribbons. It is found that increasing Se concentration effectively suppresses the bulk carrier transport and…

介观与纳米尺度物理 · 物理学 2013-05-21 ZhenHua Wang , Richard L. J. Qiu , Chee Huei Lee , ZhiDong Zhang , Xuan P. A. Gao

Hybrid graphene-topological insulator (TI) devices were fabricated using a mechanical transfer method and studied via electronic transport. Devices consisting of bilayer graphene (BLG) under the TI Bi$_2$Se$_3$ exhibit differential…

We report thermoelectric (TE) properties of topological surface Dirac states (TSDS) in three-dimensional topological insulators (3D-TIs) purely isolated from the bulk by employing single crystal Bi$_{2-x}$Sb$_x$Te$_{3-y}$Se$_y$ films…

Topological insulators are a class of solids in which the nontrivial inverted bulk band structure gives rise to metallic surface states that are robust against impurity scattering. In three-dimensional (3D) topological insulators, however,…

We study a two-dimensional (2D) tight-binding model of a topological crystalline insulator (TCI) protected by rotation symmetry. The model is built by stacking two Chern insulators with opposite Chern numbers which transform under conjugate…

介观与纳米尺度物理 · 物理学 2019-07-22 Shang Liu , Ashvin Vishwanath , Eslam Khalaf

Three dimensional topological insulator represents a class of novel quantum phases hosting robust gapless boundary excitations, which is protected by global symmetries such as time reversal, charge conservation and spin rotational symmetry.…

介观与纳米尺度物理 · 物理学 2014-03-25 Yuan-Ming Lu , Dung-Hai Lee