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Anomalous Hall effect (AHE), which arises when a current is passed through a ferromagnetic material subjected to a perpendicular magnetic field, is proportional to the magnetization of the sample.Additional hump-like features in AHE are…

材料科学 · 物理学 2022-02-09 Nandana Bhattacharya , S. Middey

We use a lowest Landau level model to study the recent observation of an anomalous Hall effect in twisted bilayer graphene. This effective model is rooted in the occurrence of Chern bands which arise due to the coupling between the graphene…

强关联电子 · 物理学 2020-04-28 Nick Bultinck , Shubhayu Chatterjee , Michael P. Zaletel

Controlling magnetic order in magnetic topological insulators (MTIs) is a key to developing spintronic applications with MTIs, and is commonly achieved by changing the magnetic doping concentration, which inevitably affects…

介观与纳米尺度物理 · 物理学 2021-07-30 Xiong Yao , Hee Taek Yi , Deepti Jain , Myung-Geun Han , Seongshik Oh

The anomalous Hall effect (AHE), which in long-range ordered ferromagnets appears as a voltage transverse to the current and usually is proportional to the magnetization, often is believed to be of negligible size in antiferromagnets due to…

Chern insulator ferromagnets are characterized by a quantized anomalous Hall effect, and have so far been identified experimentally in magnetically-doped topological insulator (MTI) thin films and in bilayer graphene moir{\'e}…

强关联电子 · 物理学 2020-12-11 Jihang Zhu , Jung-Jung Su , Allan H. MacDonald

We present measurements of inverse spin Hall effects (ISHEs) in which the conversion of a spin current into a charge current via the ISHE is detected not as a voltage in a standard open circuit but directly as the charge current generated…

介观与纳米尺度物理 · 物理学 2014-06-24 Y. Omori , F. Auvray , T. Wakamura , Y. Niimi , A. Fert , Y. Otani

Graphene is a light material for long-distance spin transport due to its low spin-orbit coupling, which at the same time is the main drawback to exhibit a sizeable spin Hall effect. Decoration by light atoms has been predicted to enhance…

Anti-ferromagnetic materials have the possibility to offer ultra fast, high data density spintronic devices. A significant challenge is the reliable detection of the state of the antiferromagnet, which can be achieved using exchange bias.…

材料科学 · 物理学 2021-03-17 Sarah Jenkins , Roy. W. Chantrell , Richard. F. L. Evans

Electric gating can strongly modulate a wide variety of physical properties in semiconductors and insulators, such as significant changes of conductivity in silicon, appearance of superconductivity in SrTiO3, the paramagnet-ferromagnet…

介观与纳米尺度物理 · 物理学 2018-10-24 Sergey Dushenko , Masaya Hokazono , Kohji Nakamura , Yuichiro Ando , Teruya Shinjo , Masashi Shiraishi

Despite many years of efforts, attempts to reach the quantum regime of topological surface states (TSS) on an electrically tunable topological insulator (TI) platform have so far failed on binary TI compounds such as Bi2Se3 due to high…

材料科学 · 物理学 2019-08-12 N. Koirala , M. Salehi , J. Moon , S. Oh

Self-intercalated chromium tellurides Cr1+xTe2 have garnered growing attention due to their high-temperature ferromagnetism, tunable spin structures and air stability, all of which are vital for versatile applications in next-generation…

Domain switching is the cornerstone of ferroelectric materials. Most associated functionalities can be tuned via domain switching, including but not limited to piezoelectricity, thermal conductivity, domain wall conductivity and topological…

In ferromagnets, electric current generally induces transverse Hall voltage in proportion to magnetization (anomalous Hall effect), and it is frequently used for electrical readout of the up and down spin states. While these properties are…

Valley Hall effect is fundamental to valleytronics and provides a promising avenue for advancing information technology. While conventional valley Hall effect requires the inversion symmetry breaking, the recently proposed nonlinear valley…

介观与纳米尺度物理 · 物理学 2025-10-16 Ruijing Fang , Jie Zhang , Zhichao Zhou , Xiao Li

The exfoliation of layered magnetic materials generates atomically thin flakes characterized by an ultrahigh surface sensitivity, which makes their magnetic properties tunable via external stimuli, such as electrostatic gating and proximity…

Discoveries of interfacial topological Hall effect (THE) provide an ideal platform for exploring physics arising from the interplay between topology and magnetism. The interfacial topological Hall effect is closely related to the…

The enhanced photonic spin hall effect (PSHE) plays a positive role in the flexible manipulation of photons. Here, by combining Dirac semimetals with Bragg reflector constructed by one-dimensional photonic crystal, we theoretically design a…

光学 · 物理学 2022-06-22 Keqiang Yin , Luzihao Li , Qijun Ma , Jie Jiang , Leyong Jiang

My research is dedicated to the electronic properties of functional oxides. My activity specifically focuses on ferroelectric tunnel junctions in which an ultrathin layer of ferroelectric material is intercalated between two metallic…

材料科学 · 物理学 2020-11-17 Vincent Garcia

The search of novel topological phases, such as the quantum anomalous Hall insulator (QAHI) or the axion insulator, has motivated different schemes to introduce magnetism into topological insulators. One scheme is to introduce ferromagnetic…

介观与纳米尺度物理 · 物理学 2022-10-11 Andres E. Llacsahuanga Allcca , Xing-Chen Pan , Ireneusz Miotkowski , Katsumi Tanigaki , Yong P. Chen

Kagome metals are topological materials with a rich phase diagram featuring various charge density wave orders and even unconventional superconductivity. However, little is still known about possible spin-polarized responses in these…

材料科学 · 物理学 2024-12-17 Diana Golovanova , Hengxin Tan , Tobias Holder , Binghai Yan