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相关论文: Electron Correlation driven Metal-Insulator transi…

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The insulator-to-metal transition (IMT) in vanadium dioxide (VO2) has garnered extensive attention for its potential applications in ultrafast switches, neuronal network architectures, and storage technologies. However, a significant…

材料科学 · 物理学 2025-01-07 Feng-Wu Guo , Wen-Hao Liu , Zhi Wang , Shu-Shen Li , Lin-Wang Wang , Jun-Wei Luo

Photo-induced insulator-metal transition in VO$_2$ and the related transient and multi-timescale structural dynamics upon photoexcitation are explained within a unified framework. Holes created by photoexcitation weaken the V-V bonds and…

材料科学 · 物理学 2013-01-29 Xun Yuan , Wenqing Zhang , Peihong Zhang

Controlling the insulator-metal transition (IMT) in correlated oxide system through oxygen vacancy ordering opens up a new paradigm for exploring exotic structural transformation and physical functionality. Oxygen vacancy serves as a…

材料科学 · 物理学 2025-12-19 Xuanchi Zhou , Xiaohui Yao , Xiaomei Qiao , Jiahui Ji , Guowei Zhou , Huihui Ji , Xiaohong Xu

Strain engineering is a powerful technology which exploits stationary external or internal stress of specific spatial distribution for controlling the fundamental properties of condensed materials and nanostructures. This advanced technique…

We present a coordinated study of the paramagnetic-to-antiferromagnetic, rhombohedral-to-monoclinic, and metal-to-insulator transitions in thin-film specimens of the classic Mott insulator V$_2$O$_3$ using low-energy muon spin relaxation,…

The in-plane magnetoconductance of the strongly interacting two-dimensional electron system in a silicon MOSFET (metal-oxide-semiconductor-field-effect transistor) exhibits an unmistakeable kink at a well-defined electron density, $n_k$.…

强关联电子 · 物理学 2019-04-12 Shiqi Li , Qing Zhang , Pouyan Ghaemi , M. P. Sarachik

We have studied electrical switching with S-shaped I-V characteristics in two-terminal MOM devices based on vanadium dioxide thin films. The switching effect is associated with the metal-insulator phase transition. Relaxation oscillations…

应用物理 · 物理学 2020-01-08 Alexander Pergament , Andrei Velichko , Maksim Belyaev , Vadim Putrolaynen

The discovery of the metal-insulator transition (MIT) in two-dimensional (2D) electron systems challenged the veracity of one of the most influential conjectures in the physics of disordered electrons, which states that `in two dimensions,…

强关联电子 · 物理学 2017-12-06 S. Anissimova , S. V. Kravchenko , A. Punnoose , A. M. Finkel'stein , T. M. Klapwijk

Nitrogen vacancy (NV) centers, optically-active atomic defects in diamond, have attracted tremendous interest for quantum sensing, network, and computing applications due to their excellent quantum coherence and remarkable versatility in a…

介观与纳米尺度物理 · 物理学 2021-04-06 Nathan J. McLaughlin , Yoav Kalcheim , Albert Suceava , Hailong Wang , Ivan K. Schuller , Chunhui Rita Du

An abrupt first-order metal-insulator transition (MIT) without structural phase transition is first observed by current-voltage measurements and micro-Raman scattering experiments, when a DC electric field is applied to a Mott insulator…

强关联电子 · 物理学 2015-06-24 Yong-Sik Lim , Hyun-Tak Kim , B. G. Chae , D. H. Youn , K. O. Kim , K. Y. Kang , S. J. Lee , K. Kim

We consider a minimal model to investigate the metal-insulator transition in VO$_2$. We adopt a Hubbard model with two orbital per unit cell, which captures the competition between Mott and singlet-dimer localization. We solve the model…

强关联电子 · 物理学 2017-01-12 Óscar Nájera , Marcello Civelli , Vladimir Dobrosavljević , Marcelo J. Rozenberg

The role of orbital ordering on metal-insulator transition of transition-metal oxides is investigated by the cluster self-consistent field approach in the strong correlation regime. A clear dependence of the insulating gap on the orbital…

强关联电子 · 物理学 2007-09-25 Dong-Meng Chen , Liang-Jian Zou

Appropriate consideration of the electron correlation is essential to reproduce the intriguing metal-insulator transition accompanying the Peierls-type structural transition in VO$_2$. In the density functional theory-based approach, this…

强关联电子 · 物理学 2021-03-16 Sooran Kim

VO2, of interest for decades due to both its phenomenology and its potential applications, has a monoclinic distortion of the rutile crystal structure at ambient temperature that is coupled to its metal-insulator transition (MIT). In…

材料科学 · 物理学 2022-07-14 Xin Gui , Robert J. Cava

Electron-phonon coupling is central to many condensed matter phenomena. Harnessing these effects for novel material functionality in materials always involves non-equilibrium electronic states, which in turn alter quasi-free-carrier density…

To explore the driving mechanisms of the metal-insulator transition (MIT) and the structural transition in VO2, we have investigated phonon dispersions of rutile VO2 (R-VO2) in the DFT and the DFT+U (U : Coulomb correlation) band…

强关联电子 · 物理学 2013-05-09 Sooran Kim , Kyoo Kim , Chang-Jong Kang , B. I. Min

We study electronic transport through a one-dimensional array of sites by using a tight binding Hamiltonian, whose site-energies are drawn from a chaotic sequence. The correlation degree between these energies is controlled by a parameter…

介观与纳米尺度物理 · 物理学 2009-11-10 R. A. Pinto , M. Rodriguez , J. A. Gonzalez , E. Medina

The optical properties of vanadium dioxide ($VO_2$) can be tuned via metal-insulator transition. In this work different types of one-dimensional photonic structure-based microcavities that embed vanadium dioxide have been studied in the…

光学 · 物理学 2022-08-30 Francesco Scotognella

In this overview we provide a general introduction to metal-insulator transitions, with focus on specific mechanisms that can localize the electrons in absence of magnetic or charge ordering, and produce well defined quantum critical…

强关联电子 · 物理学 2011-12-30 V. Dobrosavljevic

The single crystal VO2, exihibiting a first-order metal-insulator transition (MIT) at 67.2 degrees C and an insulator-insulator transition (IIT) at ~49.7 degrees C, is grown. From synchrotron-based x-ray microdiffraction analysis, the IIT…