相关论文: Anomalous Subthreshold Behaviors in Negative Capac…
The dependence of random telegraph noise (RTN) amplitude on the gate overdrive in a junctionless field-effect transistor (FinFET) with rectangular and trapezoidal channel (fin) cross sections manufactured using silicon-on-insulator…
The transversal and longitudinal resistance in the quantum Hall effect regime was measured in a Si MOSFET sample in which a slot-gate allows one to vary the electron density and filling factor in different parts of the sample. In case of…
The DC and AC conductivities of the n-GaAs/AlAs heterostructure with two filled size quantization levels are studied within a wide magnetic field range. The electron spectrum of such heterostructure is characterized by two subbands…
We study the ratchet effect in a narrow pinning-free superconductive ring based on time-dependent Ginzburg-Landau (TDGL) equations. Voltage responses to external dc an ac currents at various magnetic fields are studied. Due to asymmetric…
Spin imbalance is predicted to lead to suppression of superconductivity. We report phenomena manifesting this effect under spin-polarized quasiparticle currents in ferromagnet-superconductor-ferromagnet single electron transistors. The…
Tunneling conductance spectroscopy in normal metal-superconductor junctions is an important tool for probing Andreev bound states in mesoscopic superconducting devices, such as Majorana nanowires. In an ideal superconducting device, the…
We have investigated the spectrum of discrete electronic states in single, nm-scale Al particles incorporated into new tunneling transistors, complete with a gate electrode. The addition of the gate has allowed (a) measurements of the…
A new description is proposed for the low-field critical behavior of type-II superconductors. The starting point is the Ginzburg-Landau theory in presence of an external magnetic field H. A set of fictitious vortex variables and a singular…
From measurements of the ^{63}Cu Knight shift (K) and the nuclear spin-lattice relaxation rate (1/T_{1}) under magnetic fields from zero up to 28 T in the slightly overdoped superconductor TlSr_{2}CaCu_{2}O_{6.8} (T_{c}=68 K), we find that…
Scaling field-effect transistors (FETs) into the sub-10-nm regime fundamentally alters the transport mechanism, challenging long-standing design rules. This study investigates monolayer TMD FETs with channel lengths from 12 nm to 3 nm,…
Conductance measurements of carbon nanotubes containing gated local depletion regions exhibit plateaus as a function of gate voltage, spaced by approximately e2/h, the quantum of conductance for a single (non-degenerate) mode. Plateau…
Manipulating quantum state via electrostatic gating has been intriguing for many model systems in nanoelectronics. When it comes to the question of controlling the electron spins, more specifically, the magnetism of a system, tuning with…
A numerical simulation of spin-dependent quantum transport for a spin field effect transistor (spinFET) is implemented in a widely used simulator nanoMOS. This method includes the effect of both spin relaxation in the channel and the…
We propose and analyze a novel dual-gate Spin Field Effect Transistor (SpinFET) with half-metallic ferromagnetic source and drain contacts. The transistor has two gate pads that can be biased independently. It can be switched ON or OFF with…
Processes that lead to the critical-current suppression and change of impedance of a superconductor under the application of an external voltage is an active area of research, especially due to various possible technological applications.…
We use an aluminium single electron transistor with a magnetic gate to directly quantify the chemical potential anisotropy of GaMnAs materials. Uniaxial and cubic contributions to the chemical potential anisotropy are determined from field…
Electrostatic doping in materials can lead to various exciting electronic properties, such as metal-insulator transition and superconductivity, by altering the Fermi level position or introducing exotic phases. Cd3As2, a three-dimensional…
Persistent scaling behavior of magnetization in layered high $T_c$ superconductors with short--range columnar defects is explained within the Ginzburg Landau theory. In the weak field region, the scaling function differs from that of a…
The topological quantum field-effect transition in buckled 2D-Xenes can potentially be engineered to enable sub-thermionic transistor operation coupled with dissipationless ON-state conduction. Substantive device design strategies to…
With the downscaling of MOSFETs to nanometer dimensions, transistor electrical parameter variability is produced by factors other than variations of physical dimensions and doping profiles, which are there since device fabrication and…