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Van der Waals magnetic materials are currently of great interest as materials for applications in future ultrathin nanoelectronics and nanospintronics. Due to weak coupling between individual monolayers, these materials can be easily…

介观与纳米尺度物理 · 物理学 2023-11-21 Wojciech Rudziński , Józef Barnaś , Anna Dyrdał

Van der Waals heterostructures formed by two different monolayer semiconductors have emerged as a promising platform for new optoelectronic and spin/valleytronic applications. In addition to its atomically thin nature, a two-dimensional…

Electron valleys in transition-metal dichalcogenide monolayers drive novel physics and allow designing multifunctional architectures for applications. We propose to manipulate the electron valleys in these systems for spin/valley filter and…

介观与纳米尺度物理 · 物理学 2021-11-15 Ao Zhang , Kaike Yang , Yun Zhang , Anlian Pan , Mingxing Chen

Monolayers of semiconducting transition metal dichalcogenides exhibit intriguing fundamental physics of strongly coupled spin and valley degrees of freedom for charge carriers. While the possibility of exploiting these properties for…

Two-dimensional semiconductors feature valleytronics phenomena due to locking of the spin and momentum valley of the electrons. However, the valley polarization is intrinsically limited in monolayer crystals by the fast intervalley…

介观与纳米尺度物理 · 物理学 2019-07-10 Long Zhang , Rahul Gogna , G. William Burg , Jason Horng , Eunice Paik , Yu-Hsun Chou , Kyounghwan Kim , Emanuel Tutuc , Hui Deng

We present a theoretical analysis of valley pseudospin control in the transition metal dichalcogenide (TMD) monolayer by utilizing the magnetic proximity effect of 2D magnetic layer and, propose self-consistent analysis of photoluminescence…

介观与纳米尺度物理 · 物理学 2026-05-20 V. N. Mantsevich

Long-lived interlayer excitons with distinct spin-valley physics in van der Waals heterostructures based on transition metal dichalcogenides make them promising for information processing in next-generation devices. While the emission…

介观与纳米尺度物理 · 物理学 2021-10-18 Alberto Ciarrocchi , Dmitrii Unuchek , Ahmet Avsar , Kenji Watanabe , Takashi Taniguchi , Andras Kis

Bandstructure engineering using alloying is widely utilised for achieving optimised performance in modern semiconductor devices. While alloying has been studied in monolayer transition metal dichalcogenides, its application in van der Waals…

In this letter, we investigate the stable and commensurate van der Waals heterostructures of metallic and semiconducting $1H$ transition-metal dichalcogenides, NbS$_2$ and MoSe$_2$ (WSe$_2$), which possess almost the same lattice constant…

介观与纳米尺度物理 · 物理学 2023-06-16 Tetsuro Habe

The band structure of transition metal dichalcogenides (TMDCs) with valence band edges at different locations in the momentum space could be harnessed to build devices that operate relying on the valley degree of freedom. To realize such…

介观与纳米尺度物理 · 物理学 2016-09-06 Oriol Lopez Sanchez , Dmitry Ovchinnikov , Shikhar Misra , Adrien Allain , Andras Kis

Valleytronics targets the exploitation of the additional degrees of freedom in materials where the energy of the carriers may assume several equal minimum values (valleys) at non-equivalent points of the reciprocal space. In single layers…

Degenerate extrema in the energy dispersion of charge carriers in solids, also referred to as valleys, can be regarded as a binary quantum degree of freedom, which can potentially be used to implement valleytronic concepts in van der Waals…

Van der Waals (vdW) heterobilayers formed by two-dimensional (2D) transition metal dichalcogenides (TMDCs) created a promising platform for various electronic and optical properties. ab initio band results indicate that the band offset of…

材料科学 · 物理学 2020-09-04 Yuanyuan Wang , Fengping Li , Wei Wei , Baibiao Huang , Ying Dai

Even if individual two-dimensional materials own various interesting and unexpected properties, the stacking of such layers leads to van der Waals solids which unite the characteristics of two dimensions with novel features originating from…

介观与纳米尺度物理 · 物理学 2020-06-04 Thorsten Deilmann , Michael Rohlfing , Ursula Wurstbauer

van der Waals stacking of two-dimensional (2D) materials offers a powerful platform for engineering material interfaces with tailored electronic and optical properties. While most van der Waals multilayers have featured inorganic…

The twist degree of freedom provides a powerful new tool for engineering the electrical and optical properties of van der Waals heterostructures. Here, we show that the twist angle can be used to control the spin-valley properties of…

Monolayer transition metal dichalcogenides have emerged as prominent candidates to explore the complex interplay between the spin and the valleys degrees of freedom. The strong spin-orbit interaction and broken inversion symmetry within…

Twistronic assembly of 2D materials employs the twist angle between adjacent layers as a tuning parameter for designing the electronic and optical properties of van der Waals heterostructures. Here, we study how interlayer hybridization,…

介观与纳米尺度物理 · 物理学 2021-06-21 Fábio Ferreira , Samuel Magorrian , Vladimir Enaldiev , David Ruiz-Tijerina , Vladimir Fal'ko

The coupled spin and valley degrees of freedom in transition metal dichalcogenides (TMDs) are considered a promising platform for information processing. Here, we use a TMD heterostructure ${\text{MoS}_{2}-\text{MoSe}_{2}}$ to study optical…

Excitons in monolayer semiconductors have large optical transition dipole for strong coupling with light field. Interlayer excitons in heterobilayers, with layer separation of electron and hole components, feature large electric dipole that…

介观与纳米尺度物理 · 物理学 2019-03-07 Wei-Ting Hsu , Bo-Han Lin , Li-Syuan Lu , Ming-Hao Lee , Ming-Wen Chu , Lain-Jong Li , Wang Yao , Wen-Hao Chang , Chih-Kang Shih
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