相关论文: Valley current in graphene through electron-phonon…
We investigate interaction-induced valley domain walls in bilayer graphene in the $\nu=0$ quantum Hall state, subject to a perpendicular electric field that is antisymmetric across a line in the sample. Such a state can be realized in a…
Dirac electrons in graphene have a valley degree of freedom that is being explored as a carrier of information. In that context of "valleytronics" one seeks to coherently manipulate the valley index. Here we show that reflection from a…
We study the electron scattering produced by local out-of-plane strain deformations in the form of Gaussian bumps in graphene. Of special interest is to take into account the scalar field associated with the redistribution of charge due to…
We develop a theory of Coulomb interaction-related contribution to the photogalvanic current of the carriers of charge in two-dimensional non-centrosymmetric Dirac materials possessing a nontrivial structure of valleys and exposed to an…
Due to their possibility to encode information and realize low-energy-consumption quantum devices, control and manipulation of the valley degree of freedom have been widely studied in electronic systems. In contrast, the phononic…
Valley currents and non-local resistances of graphene nanostructures with broken inversion symmetry are considered theoretically in the linear response regime. Scattering state wave functions of electrons entering the nanostructure from the…
We study graphene with an adsorbed spin texture, where the localized spins create a periodic magnetic flux. The latter produces gaps in the graphene spectrum and breaks the valley symmetry. The resulting effective electronic model, which is…
We report a study of one-dimensional subband splitting in a bilayer graphene quantum point contact in which quantized conductance in steps of $4\,e^2/h$ is clearly defined down to the lowest subband. While our source-drain bias spectroscopy…
Realizations of some topological phases in two-dimensional systems rely on the challenge of jointly incorporating spin-orbit and magnetic exchange interactions. Here, we predict the formation and control of a fully valley-polarized quantum…
We propose a simple, yet highly efficient and robust device for producing valley polarized current in graphene. The device comprises of two distinct components; a region of uniform uniaxial strain, adjacent to an out-of-plane magnetic…
Valley filtering processes have been explored in different graphene-based configurations and scenarios to control transport responses. Here we propose graphene multi-terminal set-ups properly designed to obtain valley filtered currents in a…
Because the valleys in the band structure of graphene are related by time-reversal symmetry, electrons from one valley are reflected as holes from the other valley at the junction with a superconductor. We show how this Andreev reflection…
We report on the possibility to simultaneously generate in graphene a {\it bulk valley-polarized dissipative transport} and a {\it quantum valley Hall effect} by combining strain-induced gauge fields and real magnetic fields. Such unique…
In graphene, the valleys represent spin-like quantities and can act as a physical resource in valley-based electronics to novel quantum computation schemes. Here we demonstrate a direct route to tune and read the valley quantum states of…
We develop a unified viscous hydrodynamics for charge and valley transport in gapped graphene in the quantum Hall regime. We redefine Hall viscosity as a response to static electric-field gradients instead of strain, establishing a…
It is quite easy to control spin polarization and spin direction of a system via magnetic fields. However, there is no such a direct and efficient way to manipulate valley pseudospin degree of freedom. Here, we demonstrate experimentally…
Graphene, and other members of the monolayer Xene family, represent an ideal materials platform for "valleytronics", the control of valley localized charge excitations. The absence of a gap in these semi-metals, however, precludes valley…
Recent experiments have studied the temperature and gate voltage dependence of nonlocal transport in bilayer graphene, identifying features thought to be associated with the two-dimensional semiconductor's bulk intrinsic valley Hall effect.…
Low-energy excitations in graphene exhibit relativistic properties due to the linear dispersion relation close to the Dirac points in the first Brillouin zone. Two of the Dirac points located at opposite corners of the first Brillouin zone…
A valley filter capable of generating a valley-polarized current is a crucial element in valleytronics, yet its implementation remains challenging. Here, we propose a valley filter made of a graphene bilayer which exhibits a 1D moir\'{e}…