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相关论文: On the Dopability of Semiconductors and Governing …

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Doping of semiconductors by impurity atoms enabled their widespread technological application in micro and opto-electronics. For colloidal semiconductor nanocrystals, an emerging family of materials where size, composition and shape-control…

材料科学 · 物理学 2021-05-25 David Mocatta , Guy Cohen , Jonathan Schattner , Oded Millo , Eran Rabani , Uri Banin

The doping of semiconductor materials is a fundamental part of modern technology, but the classical approaches have in many cases reached their limits both in regard to achievable charge carrier density, as well as mobility. Modulation…

Doping mobile carriers into ordinary semiconductors such as Si, GaAs, and ZnO was the enabling step in the electronic and optoelectronic revolutions. The recent emergence of a class of "Quantum Materials", where uniquely quantum…

材料科学 · 物理学 2020-11-30 Alex Zunger , Oleksandr I. Malyi

The control over material properties attainable through molecular doping is essential to many technological applications of organic semiconductors, such as OLED or thermoelectrics. These excitonic semiconductors typically reach the…

材料科学 · 物理学 2021-07-14 Massimiliano Comin , Simone Fratini , Xavier Blase , Gabriele D'Avino

Modeling the electronic and optical properties of organic semiconductors remains a challenge for theory, despite the remarkable progress achieved in the last three decades. The complexity of these systems, including structural (dis)order…

In organic electronics, conductivity doping is used primarily to eliminate charge injection barriers in organic light-emitting diodes, organic photovoltaics and other electronic devices. Therefore, research on conductivity doping is…

材料科学 · 物理学 2025-05-15 Artem Fediai , Franz Symalla , Tobias Neumann , Wolfgang Wenzel

The search for semiconductors with high thermoelectric figure of merit has been greatly aided by theoretical modeling of electron and phonon transport, both in bulk materials and in nanocomposites. Recent experiments have studied…

强关联电子 · 物理学 2015-06-25 Subroto Mukerjee , J. E. Moore

Enhancing the dopability of semiconductors via strain engineering is critical to improving their functionalities, which is, however, largely hindered by the lack of fundamental rules. In this Letter, for the first time, we develop a unified…

材料科学 · 物理学 2021-10-27 Xiaolan Yan , Pei Li , Su-Huai Wei , Bing Huang

Doping and disorder are inseparable in the superconducting cuprates. Assuming the simplest possible disordered doping, we construct a semiphenomenological model and analyze its experimental consequences. Among the affected experimental…

超导电性 · 物理学 2009-10-31 Ivar Martin , Alexander V. Balatsky

The behavior of spin diffusion in doped semiconductors is shown to be qualitatively different than in undoped (intrinsic) ones. Whereas a spin packet in an intrinsic semiconductor must be a multiple-band disturbance, involving inhomogeneous…

材料科学 · 物理学 2009-10-31 Michael E. Flatte , Jeff M. Byers

While topological superconductors are predicted to provide building blocks for fault-tolerant quantum computing, one of the remaining challenges is to find a convenient experimental platform that would allow patterning of circuits. We find…

介观与纳米尺度物理 · 物理学 2016-10-28 Jerome T. Mlack , Atikur Rahman , Gopinath Danda , Natalia Drichko , Sarah Friedensen , Marija Drndic , Nina Markovic

A material which is an insulator entirely because of interaction effects is called a correlated insulator. Examples are trans-polyacetylene and the cuprate high temperature superconductors. Whereas doping of a band insulator results in a…

凝聚态物理 · 物理学 2016-08-31 S. A. Kivelson , V. J. Emery

Within the kinetic energy driven superconducting mechanism, the magnetic nature of cuprate superconductors is discussed. It is shown that the superconducting state is controlled by both charge carrier gap function and quasiparticle coherent…

超导电性 · 物理学 2007-05-23 Shiping Feng , Tianxing Ma , Huaiming Guo

The superconducting properties of a recently proposed phenomenological model for a weakly doped antiferromagnet are analyzed, taking into account fluctuations of the phase of the order parameter. In this model, we assume that the doped…

超导电性 · 物理学 2009-11-11 V. M. Loktev , V. M. Turkowski

Two-dimensional (2D) semiconductors are likely to dominate next-generation electronics due to their advantages in compactness and low power consumption. However, challenges such as high contact resistance and inefficient doping hinder their…

材料科学 · 物理学 2024-10-11 Raagya Arora , Ariel R. Barr , Daniel T. Larson , Michele Pizzochero , Efthimios Kaxiras

A simple model of cuprate superconductivity with an electron spectrum prepared by doping is developed. The pair-transfer interaction couples the itinerant band with two components ("hot'' and "cold'') of the defect subsystem. There are…

超导电性 · 物理学 2007-05-23 N. Kristoffel , P. Rubin

Hyperdoping consists of the intentional introduction of deep-level dopants into a semiconductor in excess of equilibrium concentrations. This causes a broadening of dopant energy levels into an intermediate band between the valence and…

Motivated by the discovery of superconductivity in boron-doped (B-doped) diamond, we investigate the localization and superconductivity in heavily doped semiconductors. The competition between Anderson localization and s-wave…

超导电性 · 物理学 2009-11-13 Youichi Yanase , Naoyuki Yorozu

While space-charge-limited current measurements are often used to characterize charge-transport in relatively intrinsic, low-mobility semiconductors, it is currently difficult to characterize lightly or heavily doped semiconductors with…

应用物理 · 物理学 2020-12-02 Jason A. Röhr , Roderick C. I. MacKenzie

Doping asymmetry is a notable phenomenon with semiconductors and a particularly longstanding challenge limiting the applications of most wide-band-gap semiconductors, which are inherent of spontaneous heavy n- or p-type doping because of…

材料科学 · 物理学 2023-07-14 Kai Liu , Zhibin Yi , Guangfu Luo
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