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We consider the most energetically favorable symmetry-allowed spin-singlet and spin-triplet superconducting pairing symmetries in twisted bilayer graphene at the magic angle, whose normal state physics is described by a six-band effective…

The surprising insulating and superconducting states of narrow-band graphene twisted bilayers have been mostly discussed so far in terms of strong electron correlation, with little or no attention to phonons and electron-phonon effects. We…

强关联电子 · 物理学 2019-10-16 M. Angeli , E. Tosatti , M. Fabrizio

We study the electronic band structure and the topological property of the twisted double bilayer graphene, or a pair of AB-stacked bilayer graphenes rotationally stacked on top of each other. We consider two different arrangements, AB-AB…

介观与纳米尺度物理 · 物理学 2019-06-10 Mikito Koshino

If we stack up two layers of graphene while changing their respective orientation by some twisting angle, we end up with a system that has striking differences when compared to single-layer graphene. For a very specific value of this twist…

介观与纳米尺度物理 · 物理学 2024-09-18 Eduardo B. Molinero , Anushree Datta , María J. Calderón , Elena Bascones , Rui E. F. Silva

We report on ground- and excited state transport through an electrostatically defined few-hole quantum dot in bilayer graphene in both parallel and perpendicular applied magnetic fields. A remarkably clear level scheme for the two-particle…

介观与纳米尺度物理 · 物理学 2019-07-17 A. Kurzmann , M. Eich , H. Overweg , M. Mangold , F. Herman , P. Rickhaus , R. Pisoni , Y. Lee , R. Garreis , C. Tong , K. Watanabe , T. Taniguchi , K. Ensslin , T. Ihn

The effect of an hexagonal boron nitride (hBN) layer close aligned with twisted bilayer graphene (TBG) is studied. At sufficiently low angles between twisted bilayer graphene and hBN, $\theta_{hBN} \lesssim 2^\circ$, the graphene electronic…

强关联电子 · 物理学 2020-10-28 Tommaso Cea , Pierre A. Pantaleon , Francisco Guinea

We examine the coexisting spin and charge density waves as a possible ground state of the magic-angle twisted bilayer graphene. When interactions are not included, the spectrum of the material has 4 (8 if spin is taken into account) almost…

强关联电子 · 物理学 2023-04-24 A. O. Sboychakov , A. V. Rozhkov , A. L. Rakhmanov

We show that the recently observed superconductivity in twisted bilayer graphene (TBG) can be explained as a consequence of the Kohn-Luttinger (KL) instability which leads to an effective attraction between electrons with originally…

介观与纳米尺度物理 · 物理学 2019-01-21 J. González , T. Stauber

Strong interaction between electrons in two-dimensional systems in the presence of a high magnetic field gives rise to fractional quantum Hall states that host quasiparticles with fractional charge and fractional exchange statistics. Here,…

We derive a material-realistic real-space many-body Hamiltonian for twisted bilayer graphene from first principles, including both single-particle hopping terms for $p_z$ electrons and long-range Coulomb interactions. By disentangling low-…

介观与纳米尺度物理 · 物理学 2022-01-24 Tom Westerhout , Mikhail I. Katsnelson , Malte Rösner

The recently demonstrated unconventional superconductivity in twisted bilayer graphene (tBLG) opens the possibility for interesting applications of two-dimensional layers that involve correlated electron states. Here we explore the…

介观与纳米尺度物理 · 物理学 2018-08-30 Stephen Carr , Shiang Fang , Pablo Jarillo-Herrero , Efthimios Kaxiras

Bilayer graphene -- two coupled single graphene layers stacked as in graphite -- provides the only known semiconductor with a gap that can be tuned externally through electric field effect. Here we use a tight binding approach to study how…

介观与纳米尺度物理 · 物理学 2010-04-29 Eduardo V. Castro , N. M. R. Peres , J. M. B. Lopes dos Santos , F. Guinea , A. H. Castro Neto

Motivated by the recently observed insulating states in twisted bilayer graphene, we study the nature of the correlated insulating phases of the twisted bilayer graphene at commensurate filling fractions. We use the continuum model and…

强关联电子 · 物理学 2020-07-23 Yi Zhang , Kun Jiang , Ziqiang Wang , Fuchun Zhang

The stacking and bending of graphene are trivial but extremely powerful agents of control over graphene's manifold physics. By changing the twist angle, one can drive the system over a plethora of exotic states via strong electron…

介观与纳米尺度物理 · 物理学 2020-02-19 Jana Vejpravova , Barbara Pacakova , Mildred S. Dresselhaus , Jing Kong , Martin Kalbac

Twisted double- and mono-bilayer graphene are graphene-based moir\'e materials hosting strongly correlated fermions in a gate-tunable conduction band with a topologically non-trivial character. Using unbiased exact diagonalization…

强关联电子 · 物理学 2023-03-22 Patrick H. Wilhelm , Thomas C. Lang , Mathias S. Scheurer , Andreas M. Läuchli

The recently realized bilayer graphene system with a twist angle of $30^\circ$ offers a new type of quasicrystal which unites the dodecagonal quasicrystalline nature and graphene's relativistic properties. Here, we introduce a concise…

介观与纳米尺度物理 · 物理学 2019-05-10 Pilkyung Moon , Mikito Koshino , Young-Woo Son

We study the symmetries of twisted trilayer graphene's band structure under various extrinsic perturbations, and analyze the role of long-range electron-electron interactions near the first magic angle. The electronic structure is modified…

介观与纳米尺度物理 · 物理学 2021-10-04 Vo Tien Phong , Pierre A. Pantaleón , Tommaso Cea , Francisco Guinea

We investigate correlated insulating states in magic-angle twisted bilayer graphene (TBG) by the exact diagonalization method applied to the extended Hubbard model with interaction parameters recently evaluated in the realistic effective…

强关联电子 · 物理学 2018-08-08 Masayuki Ochi , Mikito Koshino , Kazuhiko Kuroki

Moir\'e lattices provide a highly tunable platform for exploring the interplay between electronic correlations and band topology. Introducing a second moir\'e pattern extends this paradigm: interference between the two moir\'e patterns…

Twisted bilayer graphene (tBLG) forms a quasicrystal whose structural and electronic properties depend on the angle of rotation between its layers. Here we present a scanning tunneling microscopy study of gate-tunable tBLG devices supported…

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