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The metal-insulator transition (MIT) in vanadium dioxide (VO2) has the potential to lead to a number of disruptive technologies, including ultra-fast data storage, optical switches, and transistors which move beyond the limitations of…

强关联电子 · 物理学 2018-02-28 T. J. Huffman , D. J. Lahneman , S. L. Wang , T. Slusar , Bong-Jun Kim , Hyun-Tak Kim , M. M. Qazilbash

Vanadium dioxide, an archetypal correlated-electron material, undergoes an insulator-metal transition near room temperature that exhibits electron-correlation-driven and structurally-driven physics. Using ultrafast optical spectroscopy and…

VO2 features concomitant structural and metal-insulator transitions. This poses a challenge for understanding the underlying mechanism: is the transition triggered by a structural or by an electronic instability? The two scenarios are…

Vanadium dioxide (VO2) is a popular candidate for electronic and optical switching applications due to its well-known semiconductor-metal transition. Its study is notoriously challenging due to the interplay of long and short range elastic…

Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research, but also technological applications that utilize the subtle change in the physical…

材料科学 · 物理学 2015-06-23 Shinbuhm Lee , Tricia L. Meyer , Sungkyun Park , Takeshi Egami , Ho Nyung Lee

We investigate the electronic structure of the epitaxial VO$_2$ films in the rutile phase using the density functional theory combined with the slave spin method (DFT+SS). In DFT-SS, the multiorbital Hubbard interactions are added to a…

We present evidence of strain-induced modulation of electron correlation effects and increased orbital anisotropy in the rutile phase of epitaxial VO$_2$/TiO$_2$ films from hard x-ray photoelectron spectroscopy and soft V L-edge x-ray…

Deciphering the complicated interplay between collective and separate behaviors lies at the heart of first-order metal-insulator transition (MIT) in correlated electron systems, enabling the rational design of exotic electronic states and…

强关联电子 · 物理学 2026-04-29 Xuanchi Zhou , Xiaohui Yao , Wentian Lu , Chunwei Yao , Xiaomei Qiao

The debate about whether the insulating phases of vanadium dioxide (VO2) can be described by band theory or must be described by a theory of strong electron correlations remains unresolved even after decades of research. Energy-band…

材料科学 · 物理学 2017-03-15 Sheng Xu , Xiao Shen , Kent A. Hallman , Richard F. Haglund , Sokrates T. Pantelides

Thermally activated abrupt switching between localized and itinerant electronic states during the insulator-metal transition (IMT) in correlated oxide systems serves as a powerful platform for exploring exotic physical phenomena and device…

强关联电子 · 物理学 2025-11-11 Xuanchi Zhou , Xiaohui Yao , Xiaomei Qiao

We report on the observation of highly anisotropic viscous electronic conducting phase in amorphous WO$_{1.55}$ films that occurs below a current (I)- and frequency (f)- dependent temperature T*(I, f). At T < T*(I, f) the rotational…

强关联电子 · 物理学 2009-11-13 Yakov Kopelevich , Robson R. da Silva , Aline Rougier , Igor A. Lukyanchuk

Ultrafast optical pump - optical probe and optical pump - terahertz probe spectroscopy were performed on vanadium dioxide (VO2) and vanadium sesquioxide (V2O3) thin films over a wide temperature range. A comparison of the experimental data…

The observation of electronic phase separation textures in vanadium dioxide (VO2), a prototypical electron-correlated oxide, has recently added new perspectives on the long standing debate about its metal-insulator transition and its…

We report modulation of a reversible phase transition in VO2 films by hydrogen doping. A metallic phase and a new insulating phase are successively observed at room temperature as the doping concentration increases. It is suggested that the…

Oxides exhibiting insulator-metal transitions are promising candidates for next generation ultrafast electronic switching devices. However, critical gaps remain in understanding the onset of strain and its dynamics as these materials…

材料科学 · 物理学 2026-01-09 Arthur Niedermayr , Jianyu Wu , Bertina Fisher , Ido Kaminer , Jonas Weissenrieder

We have systematically studied a variety of vanadium dioxide (VO2) crystalline forms, including bulk single crystals and oriented thin films, using infrared (IR) near-field spectroscopic imaging techniques. By measuring the IR spectroscopic…

We have grown VO2 thin films by laser ablation for electronic device applications. In obtaining the thin films of the pure VO2 phase, oxygen partial pressure is a critical parameter because vanadium oxides have several phases with the…

材料科学 · 物理学 2007-05-23 B. G. Chae , D. H. Youn , H. T. Kim , S. Y. Maeng , K. Y. Kang

Vanadium dioxide(VO$_2$) is a paradigmatic example of a strongly correlated system that undergoes a metal-insulator transition at a structural phase transition. To date, this transition has necessitated significant post-hoc adjustments to…

强关联电子 · 物理学 2017-12-20 Huihuo Zheng , Lucas K. Wagner

We report an isothermal electric field-induced first-order phase transition from Mott-insulator to the metallic state in the epitaxial thin film of V$_2$O$_3$ in the temperature regime below its Mott transition temperature $\approx$ 180 K.…

强关联电子 · 物理学 2024-07-17 Binoy Krishna De , V. G. Sathe , S. B. Roy

Vanadium dioxide is currently considered as one of the most promising metarials for oxide elcteronics. Both planar and sandwich thin-film MOM devices based on VO2 exhibit electrical switching with an S-shaped I-V characteristic, and this…