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相关论文: Epitaxial engineering of flat silver fluorides cup…

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Compositionally complex solid solutions provide a unique route for engineering high-performance electrocatalysts, where the polyelemental surface composition can be seamlessly tuned to optimize activity, selectivity, and stability. However,…

We report a computational survey of chemical doping of silver(II) fluoride, an oxocuprate analog. We find that the ground-state solutions exhibit strong tendency for localization of defects and for phase separation. The additional…

材料科学 · 物理学 2021-01-20 Adam Grzelak , Mariana Derzsi , Wojciech Grochala

One of the major puzzles regarding unconventional superconductivity is how some of the most interesting superconductors are related to an insulating phase that lies in close proximity. Here we report scanning tunneling microscopy studies of…

超导电性 · 物理学 2015-05-08 Cun Ye , Wei Ruan , Peng Cai , Xintong Li , Aifeng Wang , Xianhui Chen , Yayu Wang

The formation of graphene on any desirable substrate is extremely essential for the successful replacement of Si with graphene in all technological applications in the beyond-CMOS era. Recently, we observed that a Ti layer formed on…

材料科学 · 物理学 2010-05-27 A. Hashimoto , H. Terasaki , K. Morita , H. Hibino , S. Tanaka

We studied the low temperature (T<130K) growth of Ag on Si(001) and Si(111) flat surfaces prepared by Si homo epitaxy with the aim to achieve thin metallic films. The band structure and morphology of the Ag overlayers have been investigated…

材料科学 · 物理学 2009-11-13 V. A. Gasparov , M. Riehl-Chudoba

We report the epitaxial stabilization of GdAuSb films and GdAuSb/LaAuSb superlattices via molecular beam epitaxy on (0001)-oriented Al$_{2}$O$_{3}$ substrates. GdAuSb crystallize in the Au-Au dimerized YPtAs structure type (space group…

High temperature superconductivity emerges in unique materials, like cuprates, that belong to the class of heterostructures at atomic limit, made of a superlattice of superconducting atomic layers intercalated by spacer layers. The physical…

Fe-based superconductors exhibit a diverse interplay between charge, orbital, and magnetic ordering1-4. Variations in atomic geometry affect electron hopping between Fe atoms5,6 and the Fermi surface topology, influencing magnetic…

Silicene is one of the most promising 2D materials for the realization of next-generation electronic devices, owing to its high carrier mobility and bandgap tunability through the imposition of an external electric field. To exploit this…

We present theoretical study of relative stability as well as of the magnetic and electronic properties of AgF2 and CuF2, in two related structural forms: orthorhombic (ambient pressure form of AgF2) and monoclinic (ambient pressure form of…

材料科学 · 物理学 2024-03-28 Daniel Jezierski , Wojciech Grochala

We demonstrate that the carrier concentration of epitaxial graphene devices grown on the C-face of a SiC substrate is efficiently modulated by a buried gate. The gate is fabricated via the implantation of nitrogen atoms in the SiC crystal,…

介观与纳米尺度物理 · 物理学 2011-07-14 B. Jouault , N. Camara , B. Jabakhanji , A. Caboni , C. Consejo , P. Godignon , D. K. Maude , J. Camassel

Graphene is a promising contender to succeed the throne of silicon in electronics. To this goal, large-scale epitaxial growth of graphene on substrates should be developed. Among various methods along this line, epitaxial growth of graphene…

2H-TaS$_2$ few layers have been grown epitaxially onto GaN(0001). A high substrate growth temperature of 825$^{\circ}$C induces best structural properties of the overlayer, as revealed by in-situ electron diffraction (RHEED and LEED). The…

材料科学 · 物理学 2025-10-23 Constantin Hilbrunner , Tobias Meyer , Joerg Malindretos , Angela Rizzi

Electrons on the lattice subject to a strong magnetic field exhibit the fractal spectrum of electrons, which is known as the Hofstadter butterfly. In this work, we investigate unconventional superconductivity in a three-dimensional…

超导电性 · 物理学 2020-08-03 Moon Jip Park , Yong Baek Kim , SungBin Lee

Epitaxial growth of atomically-sharp interfaces serves as one of the main building blocks of nanofabrication. Such interfaces are crucial for the operation of various devices including transistors, photo-voltaic cells, and memory…

强关联电子 · 物理学 2017-10-13 A. Ron , A. Hevroni , E. Maniv , M. Mograbi , L. Jin , C. -L. Jia , K. W. Urban , G. Markovich , Y. Dagan

The layered nature and simple structure of FeSe reveal this iron-based superconductor as a unique building block for the design of artificial heterostructure materials. While superconductivity develops in ultrathin films of FeSe on SrTiO3…

超导电性 · 物理学 2024-11-19 Yongsong Wang , Haojie Guo , Ane Etxebarria , Sandra Sajan , Sara Barja , Miguel M. Ugeda

We report on epitaxial growth in thin-film synthesis of a polar magnetic semiconductor AgCrSe2 on lattice-matched yttria-stabilized zirconia (111) substrate by pulsed-layer deposition (PLD). By using Ag-rich PLD target to compensate for Ag…

The perfectly linear temperature dependence of the electrical resistivity observed as $T \rightarrow$ 0 in a variety of metals close to a quantum critical point is a major puzzle of condensed matter physics . Here we show that $T$-linear…

Superconducting films of alpha-Ta are promising candidates for the fabrication of advanced superconducting qubits. However, alpha-Ta films suffer from many growth-induced structural inadequacies that negatively affect their performance. We…

Delicate engineering of the bands remains challenging due to complex electronic, structural, and compositional interplay. We demonstrate the formation of distinct metallic and insulating ground states in ultra-thin copper sulfide films by…