相关论文: Electrostatic effect on off-field ferroelectric hy…
We develop and implement an automated experiment in multimodal imaging to probe structural, chemical, and functional behaviors in complex materials and elucidate the dominant physical mechanisms that control device function. Here the…
Kelvin Probe Force Microscopy (KPFM) is widely used to measure the surface potential on samples, from which electrostatic patch force can be calculated. However, since the KPFM measurements represent a weighted average of local potentials…
Antiferroelectrics exhibit unique double-hysteresis polarization loops, which have garnered significant attention due to their potential applications such as energy storage, electromechanical transduction, as well as synapse devices.…
While $Hf_{0.5}Zr_{0.5}O_2$ (HZO) thin films hold significant promise for modern nanoelectronic devices, a comprehensive understanding of the interplay between their polycrystalline structure and electrical properties remains elusive. Here,…
A surface magnetoelectric effect is revealed by density-functional calculations that are applied to ferromagnetic Fe(001), Ni(001) and Co(0001) films in the presence of external electric field. The effect originates from spin-dependent…
In purely c-axis oriented PbZr$_{0.2}$Ti$_{0.8}$O$_3$ ferroelectric thin films, a lateral piezoresponse force microscopy signal is observed at the position of 180{\deg}domain walls, where the out-of-plane oriented polarization is reversed.…
Based on first principles calculations we investigate the electronic and magnetic properties of Pt layers in Pd$(001)$/Co/Pt thin film structures exposed to an external electric field. Due to the Co underlayer, the surface Pt layers have…
As a consequence of elasticity, mechanical deformations of crystals occur on a length scale comparable to their thickness. This is exemplified by applying a homogeneous electric field to a multi-domain ferroelectric crystal: as one domain…
In order to understand the physical hysteresis loops clearly, we constructed a novel model, which is combined with the electric field, the temperature, and the stress as one synthetically parameter. This model revealed the shape of…
The structure of a single antiparallel ferroelectric domain wall in LiNbO3 is quantitatively mapped by piezoelectric force microscopy (PFM) with calibrated probe geometry. The PFM measurements are performed for 49 probes with the radius…
Piezoelectricity, the generation of electric charge in response to mechanical stress, is a key property in both natural and synthetic materials. This study significantly boosts the piezoelectric response of chitosan, a biodegradable…
Magneto-electric effect in a multiferroic heterostructure film, i.e. a coupled ferromagnetic-ferroelectric thin film, has been investigated through the use of the Metropolis algorithm in Monte Carlo simulations. A classical Heisenberg model…
We study theoretically the influence of the underlying domain microstructure on the electromechanical properties of ferroelectrics. Our calculations are based on a continuum approach that incorporates the long-range elastic and…
At first sight piezoresponse force microscopy (PFM) seems an ideal technique for the determination of piezoelectric coefficients (PCs), thus making use of its ultra-high vertical resolution (<0.1 pm/V). Christman et al. \cite{Chr98} first…
We investigate the nonlinear response of the domain wall velocity ($v$) to an external electric field ($E_{ext}$) in ferroelectric Si-doped HfO$_{2}$ thin film capacitors using piezoresponse force microscopy (PFM) and switching current…
The determination of the electromechanical properties of materials for a parallel-plate capacitor structure is affected by the electrostatic force between their electrodes. The corrections induced by this electric-field-induced stress are…
Phase-field simulation (PFS) have revolutionized the understanding of domain structure and switching behavior in ferroelectric thin films and ceramics. Generally, PFS is based on solution of a (set) of Ginzburg-Landau equations for a…
The spatial variation and temporal variation in surface potential are important error sources in various precision experiments and deserved to be considered carefully. In the former case, the theoretical analysis shows that this effect…
Electrochemical phenomena in ferroelectrics are of particular interest for catalysis and sensing applications, with recent studies highlighting the combined role of the ferroelectric polarisation, applied surface voltage and overall…
Extra components in series to non-ferroelectric capacitance can cause apparent ferroelectric D-E hysteresis loops even with the double-wave method (DWM). Characteristics of fake loops are studied withsimple circuit models, and suspicious…