相关论文: Graphene-Semiconductor Contact

The interplay of graphene and superconductivity has attracted great interest for understanding the two-dimensional Dirac Fermion physics and for superconducting device applications. In previous work, graphene-superconductor junctions…

Ballistic semiconductor structures have allowed the realization of optics-like phenomena in electronics, including magnetic focusing and lensing. An extension that appears unique to graphene is to use both n and p carrier types to create…

Graphene/silicon (G/Si) heterojunction based devices have been demonstrated as high responsivity photodetectors that are potentially compatible with semiconductor technology. Such G/Si Schottky junction diodes are typically in parallel with…

Using the tight-binding model with long-range Coulomb interactions between electrons, we study some of the electronic properties of graphene. The Coulomb interactions are treated with the renormalized-ring-diagram approximation. By…

We discuss the possibility of superconductivity in graphene taking into account both electron-phonon and electron-electron Coulomb interactions. The analysis is carried out assuming that the Fermi energy is far away from the Dirac points,…

The newly emerging class of atomically-thin materials has shown a high potential for the realisation of novel electronic and optoelectronic components. Amongst this family, semiconducting transition metal dichalcogenides (TMDCs) are of…

Using a first-principle pseudopotential approach, we have investigated the Schottky barrier heights of abrupt Al/Ge, Al/GaAs, Al/AlAs, and Al/ZnSe (100) junctions, and their dependence on the semiconductor chemical composition and surface…

We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs) or 4H-silicon carbide (4H-SiC). Near room temperature, the forward-bias diode…

With the use of density functional theory calculations and addition of van der Waals correction, the graphene/HfS$_2$ heterojunction is constructed, and its electronic properties are examined thoroughly. This interface is determined as…

The interaction between two different materials can present novel phenomena that are quite different from the physical properties observed when each material stands alone. Strong electronic correlations, such as magnetism and…

We report a systematic study of the contact resistance present at the interface between a metal (Ti) and graphene layers of different, known thickness. By comparing devices fabricated on 11 graphene flakes we demonstrate that the contact…

The formation of image-potential states at the interface between a graphene layer and a metal surface is studied by means of model calculations. An analytical one-dimensional model-potential for the combined system is constructed and used…

A low Schottky barrier height (SBH) at source/drain contact is essential for achieving high drive current in atomic layer MoS2 channel based field-effect transistors. Approaches such as choosing metals with appropriate work functions and…

Accessing intrinsic properties of a graphene device can be hindered by the influence of contact electrodes. Here, we capacitively couple graphene devices to superconducting resonant circuits and observe clear changes in the resonance-…

We have studied the electronic structure of the interface between 6H-SiC{0001} and graphite. On n-type and p-type 6H-SiC(0001) we observe Schottky barriers of Phi_b,n^Si= 0.3+-0.1eV and Phi_b,p^Si=2.7+-0.1eV, respectively. The observed…

The two-dimensional nature of graphene makes it an ideal platform to explore proximity-induced unconventional planar superconductivity and the possibility of topological superconductivity. Using Green's functions techniques, we study the…

We fabricate and investigate high quality graphene devices with contactless, suspended top gates, and demonstrate formation of graphene pnp junctions with tunable polarity and doping levels. The device resistance displays distinct…

We explore the electronic ground states of Bernal-stacked multilayer graphenes using the Hartree-Fock mean-field approximation and the full-parameter band model. We find that the electron-electron interaction tends to open a band gap in…

The performance of nanoscale electronic devices based on a two-three dimensional (2D-3D) interface is significantly affected by the electrical contacts that interconnect these materials with external circuitry. This work investigates charge…

We outline a Kohn-Sham-Dirac density-functional-theory (DFT) scheme for graphene sheets that treats slowly-varying inhomogeneous external potentials and electron-electron interactions on an equal footing. The theory is able to account for…