相关论文: Topological Hall effect in single thick SrRuO3 lay…

TmFeO$_3$ (TFO) is a canted antiferromagnet that undergoes a spin reorientation transition (SRT) with temperature between 82 K and 94 K in single crystals. In this temperature region, the N\'eel vector continuously rotates from the…

We measure the anomalous Hall effect (AHE) resistivity $\rho_{xy}$ in thin films of the itinerant ferromagnet SrRuO$_{3}$. At low temperatures, the AHE coefficient $R_{s}$ varies with $\rho_{xx}^2$, and at higher temperatures, $R_{s}$…

We have studied the chemical and electronic properties of LaAlO3/SrVO3 ultrathin films by combining hard x-ray photoemission spectroscopy and transport measurements. We compare single SrVO3 (SVO) ultrathin films and SrVO3 buried below a…

Ultrathin two-dimensional (2D) electronic systems at the interfaces of layered materials are highly desirable platforms for exploring of novel quantum phenomena and developing advanced device applications. Here, we investigate ultrathin…

Quantum anomalous Hall effect(QAHE) can only be realized at extremely low temperatures in magnetically doped topological insulators(TIs) due to limitations inherent with the doping precess. In an effort to boost the quantization temperature…

The quantum anomalous Hall effect (QAHE) that emerges under broken time-reversal symmetry in topological insulators (TI) exhibits many fascinating physical properties for potential applications in nano-electronics and spintronics. However,…

Nonlinear Hall effect (NLHE) holds immense significance in recognizing the band geometry and its potential applications in current rectification. Recent discoveries have expanded the study from second-order to third-order nonlinear Hall…

Thin film of superfluid $^3$He on a corrugated graphene substrate represents topological matter with a smooth disorder. It is possible that the atomically smooth disorder produced by the corrugated graphene does not destroy the…

Strongly correlated iridate pyrochlores with geometrically frustrated spins have been recognized as a potentially interesting group of oxide materials where novel topological phases may appear. A particularly attractive system is the…

Integration of transition metal dichalcogenides (TMDs) on ferromagnetic materials (FM) may yield fascinating physics and promise for electronics and spintronic applications. In this work, high-temperature anomalous Hall effect (AHE) in the…

In this work, we reported the observation of a novel planar topological Hall effect (PTHE) in single crystal of Fe3GeTe2, a paradigmatic two-dimensional ferromagnet with strong uniaxial anisotropy. The Hall effect and magnetoresistance…

The Orbital Hall effect, which originates from materials with weak spin-orbit coupling, has attracted considerable interest for spin-orbitronic applications. Here, we demonstrate the inverse effect of the orbital Hall effect and observe…

The topological nature of topological insulators are related to the symmetries present in the material, for example, quantum spin Hall effect can be observed in topological insulators with time reversal symmetry, while broken time reversal…

Topological crystalline insulator (TCI) is a recently-discovered topological phase of matter. It possesses multiple Dirac surface states, which are protected by the crystal symmetry. This is in contrast to the time reversal symmetry that is…

The development of advanced spintronics devices hinges on the efficient generation and utilization of pure spin current. In materials with large spin-orbit coupling, the spin Hall effect may convert charge current to pure spin current and a…

We present a new method to obtain topological insulator Bi$_2$Se$_3$ thin films with a centimeter large lateral length. To produce amorphous Bi$_2$Se$_3$ thin films we have used a sequential flash-evaporation method at room temperature.…

We have epitaxially grown c-axis oriented SrxLa1-xCuO2 thin films by rf sputtering on KTaO3 substrates with x = 0.12. The as-grown deposits are insulating and a series of superconducting films with various Tc(R=0) up to 26 K have been…

Magnetism and spin-orbit coupling (SOC) are two quintessential ingredients underlying novel topological transport phenomena in itinerant ferromagnets. When spin-polarized bands support nodal points/lines with band degeneracy that can be…

We report a proximity-driven large anomalous Hall effect in all-telluride heterostructures consisting of ferromagnetic insulator Cr2Ge2Te6 and topological insulator (Bi,Sb)2Te3. Despite small magnetization in the (Bi,Sb)2Te3 layer, the…

The quantized version of anomalous Hall effect realized in magnetic topological insulators (MTIs) has great potential for the development of topological quantum physics and low-power electronic/spintronic applications. To enable…