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Ceria (CeO$_2$) is a material of significant technological importance. A detailed understanding of the material's defect physics and chemistry is key to understanding and optimizing its properties. Here, we report a hybrid…

材料科学 · 物理学 2025-09-11 Khang Hoang , Michelle D. Johannes

Successful doping of single-layer transition metal dichalcogenides (TMDs) remains a formidable barrier to their incorporation into a range of technologies. We use density functional theory to study doping of molybdenum and tungsten…

材料科学 · 物理学 2017-11-22 Nicolas Onofrio , David Guzman , Alejandro Strachan

Density functional theory is used to systematically study the electronic and magnetic properties of doped MoS$_2$ monolayers, where the dopants are incorporated both via S/Mo substitution or as adsorbates. Among the possible substitutional…

材料科学 · 物理学 2013-08-21 Kapildeb Dolui , Ivan Rungger , Chaitanya Das Pemmaraju , Stefano Sanvito

Hydrogen storage remains a key challenge for the development of a sustainable hydrogen energy system, where materials must satisfy requirements on storage capacity, thermodynamics, kinetics, and reversibility. Complex borohydrides are…

材料科学 · 物理学 2026-04-13 Sikander Azam , Wilayat Khan

Phase diagram of electron and hole-doped SrFe2As2 single crystals is investigated using Co and Mn substitution at the Fe-sites. We found that the spin-density-wave state is suppressed by both dopants, but the superconducting phase appears…

超导电性 · 物理学 2015-05-18 J. S. Kim , Seunghyun Khim , H. J. Kim , M. J. Eom , J. Law , R. K. Kremer , Ji Hoon Shim , Kee Hoon Kim

Structures for realizing hole-doped MgB$_2$ without appealing to chemical substitutions are proposed. These structures which consist of alternating MgB$_2$ and graphene layers have small excess energy compared to bulk graphite and MgB$_2$.…

超导电性 · 物理学 2007-05-23 Peihong Zhang , Susumu Saito , Steven G. Louie , Marvin L. Cohen

Investigations on II-Sn-N2 (II = Mg, Ca) have been started very recently compared to the intense research of the Zn-IV-N2 (IV = Si, Ge, Sn). In this work, we perform a comprehensive study of cation disorder in stoichiometric MgSnN2 and…

材料科学 · 物理学 2021-10-28 Dan Han , Stefan S. Rudel , Wolfgang Schnick , Hubert Ebert

Cubic boron arsenide (BAs) stands out as a promising material for advanced electronics, thanks to its exceptional thermal conductivity and ambipolar mobility. However, effective control of p- and n-type doping in BAs poses a significant…

材料科学 · 物理学 2024-11-12 Shuxiang Zhou , Zilong Hua , Kaustubh K. Bawane , Hao Zhou , Tianli Feng

The electronic and optical properties of self-trapped holes in kappa-phase orthorhombic Ga2O3 in conjunction with isoelectronic and acceptor dopants were studied using hybrid density functional theory. Hole trapping was found to be…

We investigate the possibility that Hf defects exist in the Si channel of HfO2 Si-based metal-oxide-semiconductor devices. We have studied, using ab initio Density Functional Theory calculations, substitutional and interstitial Hf…

材料科学 · 物理学 2007-05-23 W. L. Scopel , Antonio J. R. da Silva , A. Fazzio

Heavy carbon doping of MgB$_2$ is studied by first principles electronic structure studies of two types, an ordered supercell (Mg(B$_{1-x}$C$_{x}$)$_{2}$,x=0.0833) and also the coherent potential approximation method that incorporates…

超导电性 · 物理学 2007-05-23 Deepa Kasinathan , K. -W. Lee , W. E. Pickett

While Si is an effective insertion type anode for Li-ion batteries, crystalline Si has been shown to be unsuitable for Na and Mg storage due, in particular, to insufficient binding strength. It has recently been reported that Si nanowires…

材料科学 · 物理学 2016-02-05 Fleur Legrain , Sergei Manzhos

In this study the MOCVD growth and electrical properties of N-polar modulation doped p-AlGaN/GaN superlattices (SLs) were investigated. Hole sheet charge density and mobility were studied as a function of the concentration of the p-type…

应用物理 · 物理学 2019-10-24 Athith Krishna , Aditya Raj , Nirupam Hatui , Stacia Keller , Umesh Mishra

Based on the experimentally found existence of two gaps in MgB2 (one gap associated to the boron sigma-states and the other to the boron pi-states), the different contributions to the transport properties, electrical conductivity and Hall…

超导电性 · 物理学 2007-05-23 Pablo de la Mora , Miguel Castro , Gustavo Tavizon

Sn-based perovskites as low-toxic materials are actively studied for optoelectronic applications. However, their performance is limited by $p$-type self-doping, which can be suppressed by substitutional doping on the cation sites. In this…

材料科学 · 物理学 2024-12-04 Chadawan Khamdang , Mengen Wang

We have fabricated electric double-layer field-effect devices to electrostatically dope our active materials, either $x$=0.015 Ga$_{1-x}$Mn$_x$As or $x$=3.2$\times10^{-4}$ Ga$_{1-x}$Be$_x$As. The devices are tailored for interrogation of…

In this study, we use DFT calculations to investigate the electronic and structural properties of MoX$_2$ (X = S, Se, Te) monolayers doped with substitutional Sb atoms, with a central focus on the Sb(Mo) substitution. In MoS$_2$, we observe…

材料科学 · 物理学 2021-10-04 Marcos G. Menezes , Saif Ullah

We report the results of an ab initio modeling of substitutional impurities such as zinc, copper and zirconium ions incorporated into the magnesium sublattice of MgB2. The goal of computational studies was to gain an atomistic understanding…

材料科学 · 物理学 2011-10-21 Aleksandr Pishtshev , Mihhail Klopov

The electronic structure of the neutral and singly charged Mg vacancy in MgO is investigated using density functional theory. For both defects, semilocal exchange correlation functionals such as the local spin density approximation…

材料科学 · 物理学 2015-05-14 A. Droghetti , C. D. Pemmaraju , S. Sanvito

Few- and single-layer MoS2 host substantial densities of defects. They are thought to influence the doping level, the crystal structure, and the binding of electron-hole pairs. We disentangle the concomitant spectroscopic expression of all…