相关论文: Anisotropic three-dimensional weak localization in…

We establish the dominant effect of anisotropic weak localization (WL) in three dimensions associated with a propagative Fermi surface, on the conductivity correction in heavily nitrogen doped ultrananocrystalline diamond (UNCD) films based…

We present the electrical transport characteristics of a batch of nano-crystalline diamond films of varying nitrogen concentrations and explain the conduction mechanism by the disordered quasi-superlattice model applied to semiconductor…

We investigate transport properties of ultrananocrystalline diamond films for a broad range of temperatures. Addition of nitrogen during plasma-assisted growth increases the conductivity of ultrananocrystalline diamond films by several…

Using microwave-assisted plasma chemical vapour deposition (CVD) a layer of Nitrogen doped ultra-nano-crystalline diamond (N-UNCD) is deposited on top of a non-conducting diamond layer, which itself is situated on a Silicon wafer. This…

Detailed structural and electrical properties of ultra-nano-crystalline diamond (UNCD) films grown in H$_\text{2}$/CH$_\text{4}$/N$_\text{2}$ plasma were systematically studied as a function of deposition temperature ($T_d$) and nitrogen…

Two decades since its discovery, superconducting heavily boron-doped diamond (HBDD) still presents unresolved fundamental questions whose resolution is relevant to the development of this material for quantum technologies. We use electrical…

This work presents a magnetic field imaging method based on color centres in diamond crystal applied to thin film structure. To demonstrate the capacity of our device we have used it for characterization of magnetic properties in…

A combination of out-of-plane and in-plane magnetoconductance (MC) study in topological insulators (TI) is often used as an experimental technique to probe weak anti-localization (WAL) response of the topological surface states (TSSs).…

We report on the observation of non-metallic electrical conduction, resistive switching, and a negative temperature coefficient of resistance in cluster-assembled nanostructured gold films above the electrical percolation and in…

Heterostructures based on ultrawide-bandgap (UWBG) semiconductors (bandgap >4.0 eV), boron nitride (BN) and diamond are important for next-generation high-power electronics. However, in-situ hetero-epitaxy of BN/diamond or vice-versa…

By using the pulsed-laser-ablation technique, we have successfully grown the La$_{3}$Ni$_{2}$O$_{7-\delta}$ thin films with $c$-axis orientation perpendicular to the film surface. X-ray diffraction shows that the (00l) peaks can be well…

The paper reports on the investigations of the weak localization (WL) effects in 3D polycrystalline thin films of InSb. The films are closely compensated showing the electron concentration n>10^{16} cm^{-3} at the total concentration of the…

We investigate the influence of gold thin-films subsequently deposited on a set of initially bare, doubly clamped, high-stress silicon nitride string resonators at room temperature. Analytical expressions for resonance frequency, quality…

Chemical-Vapor-Deposition (CVD) diamond films were prepared using a variation of nitrogen addition into the gas source admixture by a direct current CVD method. The influence of nitrogen addition on the crystallographic texture and grain…

We have observed peculiar magnetization textures in Ni$_{80}$Pd$_{20}$ nanostructures using three different imaging techniques: magnetic force microscopy, photoemission electron microscopy under polarized X-ray absorption, and scanning…

A set of thin film Mn$_x$Si$_{1-x}$ alloy samples with different manganese concentration x = 0.44 - 0.63 grown by the pulsed laser deposition (PLD) method onto the Al$_2$O$_3$(0001) substrate was investigated in the temperature range 4 -…

Dislocations, one-dimensional lattice imperfections, are common to technologically important materials such as III-V semiconductors, and adversely affect heat dissipation in e.g., nitride-based high-power electronic devices. For decades,…

Ultrananocrystalline Diamond Nanowire (UNCD NW) thin film was deposited on mirror polished silicon substrate (100) using Microwave Plasma Enhanced Chemical Vapor Deposition (MPECVD) System with optimized deposition parameters in CH4 (6%)/N2…

The magnetization (M) as a function of temperature (T) from 2 to 300 K and in-plane field (H) up to 1 kOe, room temperature easy and hard direction in-plane field hysteresis loops for fields between -100 and +100 Oe, and 10 GHz…

Monophasic and homogeneous Ni10Zr7 nanocrystalline alloy films were successfully grown at room temperature by co-sputtering in an indigenously developed three-gun DC/RF magnetron sputtering unit. The films could be produced with long-range…