相关论文: Influence of the velocity barrier on the massive D…
A simple tight-binding theoretical model is proposed for spin dependent, current-in-plane transport in highly coherent spin valve structures under specularity conditions. Using quantum-mechanically coherent and spatially quantized Fermi…
We investigate the electronic transport property of lateral heterojunctions of semiconducting and metallic transition-metal dichalcogenide monolayers, MoSe$_2$ and NbSe$_2$, respectively. We calculate the electronic transmission probability…
In this work we investigate theoretically the influence of a Fermi velocity modulation in the electronic and transport properties of magnetic graphene superlattices. We solve the effective Dirac equation for graphene with a position…
Understanding the role of spin-orbit coupling (SOC) has been crucial to controlling magnetic anisotropy in magnetic multilayer films. It has been shown that electronic structure can be altered via interface SOC by varying the superlattice…
When the atomic layers in a non-centrosymmetric van der Waals structure slide against each other, the interfacial charge transfer results in a reversal of the structures spontaneous polarization. This phenomenon is known as sliding…
Spin-valley locking in the band structure of monolayers of MoS$_2$ and other group-VI dichalcogenides has attracted enormous interest, since it offers potential for valleytronic and optoelectronic applications. Such an exotic electronic…
We study the effect of the domain wall on electronic transport properties in wire of ferromagnetic 3$d$ transition metals based on the linear response theory. We considered the exchange interaction between the conduction electron and the…
We simulate the electron transport in vertical bi-layer nanowire which can be fabricated in molecular beam epitaxy process with lateral confinement potential formed by means of cleaved overgrowth or surface oxidization methods giving…
The dynamics of a domain wall driven by a spin-polarized current in a mesoscopic system is studied numerically. Spin-mixing in the states of the conduction electrons is fully taken into account. When the Fermi energy of the electrons is…
Discovering and engineering spin-polarised surface states in the electronic structures of condensed matter systems is a crucial first step in development of spintronic devices, wherein spin-polarised bands crossing the Fermi level can…
Transport in a two-dimensional electron gas subject to an external magnetic field is analyzed in the presence of a \textit{longitudinal barrier.} We show that \textit{quantum interference of the edge states} bound by the longitudinal…
Altermagnets represent a novel class of magnetic materials that integrate the advantages of both ferromagnets and antiferromagnets, providing a rich platform for exploring the physical properties of multiferroic materials.This work…
The problem of spin-dependent transport of electrons through a finite array of quantum dots attached to 1D quantum wire (spin gun) for various semiconductor materials is studied. The Breit-Fermi term for spin-spin interaction in the…
Controlling the flow of electrons by manipulation of their spin is a key to the development of spin-based electronics. While recent demonstrations of electrical-gate control in spin-transistor configurations show great promise, operation at…
We present a theory of the current-voltage characteristics of a magnetic domain wall between two highly spin-polarized materials, which takes into account the effect of the electrical bias on the spin-flip probability of an electron…
We present measurements of magnetic tunnel junctions made using a self-assembled-monolayer molecular barrier. Ni/octanethiol/Ni samples were fabricated in a nanopore geometry. The devices exhibit significant changes in resistance as the…
The effect of spin-disorder scattering on perpendicular transport in a magnetic monolayer is considered within the single-site Coherent Potential Approximation (CPA). The exchange interaction between a conduction electron and localized…
We investigate the Goos-H\"anchen shift for ballistic electrons (i) reflected from a step-like inhomogeneity of the potential energy and (or) effective mass, and (ii) transmitted through a ferromagnetic barrier region in monolayer silicene…
Spin-orbit coupling (SOC) combined with electronic correlation can induce topological phase transition, producing novel electronic states. Here, we investigate the impact of SOC combined with correlation effects on physical properties of…
We theoretically study transport properties of a two-dimensional electron system on a hydrogen-passivated Si(111) surface in the field-effect-transistor (FET) configuration. We calculate the density and temperature dependent mobility and…