相关论文: Anisotropy in Antiferromagnets
Motivated by impurity-induced magnetic ordering phenomena in spin-gap materials like TlCuCl3, we develop a mean-field theory for strongly disordered antiferromagnets, designed to capture the broad distribution of coupling constants in the…
The origin of charge transport and magnetization anisotropy was studied in DyB12, an antiferromagnetic (AF) metal with Neel temperature TN = 16.3 K that exhibits both cooperative Jahn-Teller distortions of the fcc crystal structure and…
The discovery of fascinating ways to control and manipulate antiferromagnetic materials have garnered considerable attention as an attractive platform to explore novel spintronic phenomena and functionalities. Layered antiferromagnets…
Thermodynamic properties as well as low-energy magnon excitations of $S=1$ honeycomb-layered Na$_3$Ni$_2$SbO$_6$ have been investigated by high-resolution dilatometry, static magnetisation, and high-frequency electron spin resonance studies…
Antiferromagnets are magnetically ordered materials which exhibit no net moment and thus are insensitive to magnetic fields. Antiferromagnetic spintronics aims to take advantage of this insensitivity for enhanced stability, while at the…
Antiferromagnetic materials have a vanishingly small net magnetization, which generates weak dipolar fields and makes them robust against external magnetic perturbation and rapid magnetization dynamics, as dictated by the geometric mean of…
The focus of studies on ferromagnetic semiconductors is moving from material issues to device functionalities based on novel phenomena often associated with the anisotropy properties of these materials. This is driving a need for a method…
The advancement of spin-based devices as a replacement for CMOS technology demands lower spin-switching energy in ferromagnetic (FM) materials. Ferroelectric (FE) materials offer a promising avenue for influencing FM properties, yet the…
Antiferromagnets (AFMs) are widely believed to be superior than ferromagnets in spintronics because of their high stability due to the vanishingly small stray field. It is thus expected that the order parameter of AFM should always align…
On the basis of a first-principles, relativistic electronic structure theory of finite temperature metallic magnetism, we investigate the variation of magnetic anisotropy, K, with magnetisation, M, in metallic ferromagnets. We apply the…
Control and detection of spin order in ferromagnets is the main principle allowing storing and reading of magnetic information in nowadays technology. The large class of antiferromagnets, on the other hand, is less utilized, despite its…
Spintronics in ferromagnetic metals is built on a complementary set of phenomena in which magnetic configurations influence transport coefficients and transport currents alter magnetic configurations. In this Letter we propose that…
Spin-polarized antiferromagnets (AFMs), including altermagnets, noncollinear AFMs, and two-dimensional layer-polarized AFMs, have emerged as transformative materials for next-generation spintronic and optoelectronic technologies. These…
We have fabricated Fe(N) thin films with varied N2 partial pressure and studied the microstructure, morphology, magnetic properties and resistivity by using X-ray diffraction, atomic force microscopy, transmission electron microscopy,…
Antiferromagnetic materials are magnetic inside, however, the direction of their ordered microscopic moments alternates between individual atomic sites. The resulting zero net magnetic moment makes magnetism in antiferromagnets invisible on…
Studies of magnetization dynamics have incessantly facilitated the discovery of fundamentally novel physical phenomena, making steady headway in the development of magnetic and spintronics devices. The dynamics can be induced and detected…
Antiferromagnetic spintronic devices have the potential to outperform conventional ferromagnetic devices due to their ultrafast dynamics and high data density. A challenge in designing these devices is the control and detection of the…
Systematic measurements of temperature dependent magnetization, resistivity and angle-resolved photoemission spectroscopy (ARPES) at ambient pressure as well as resistivity under pressures up to 5.25 GPa were conducted on single crystals of…
CeAu2Ge2 single crystals (tetragonal ThCr2Si2 structure) have been grown in Au-Ge flux (AGF) as well as in Sn flux (SF). X-ray powder-diffraction and EDX measurements indicate that in the latter case Sn atoms from the flux are incorporated…
Implementation of antiferromagnetic compounds as active elements in spintronics has been hindered by their insensitive nature against external perturbations which causes difficulties in switching among different antiferromagnetic spin…