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The potential of graphene to impact the development of the next generation of electronics has renewed interest in its growth and structure. The graphitization of hexagonal SiC surfaces provides a viable alternative for the synthesis of…

介观与纳米尺度物理 · 物理学 2015-05-13 Y. Qi , S. H. Rhim , G. F. Sun , M. Weinert , L. Li

Low-symmetry 2D materials---such as ReS$_2$ and ReSe$_2$ monolayers, black phosphorus monolayers, group-IV monochalcogenide monolayers, borophene, among others---have more complex atomistic structures than the honeycomb lattices of…

介观与纳米尺度物理 · 物理学 2020-10-28 Salvador Barraza-Lopez , Fengnian Xia , Wenjuan Zhu , Han Wang

A detailed structural model for the indium-induced Si(111)-(4x1) surface reconstruction has been determined by analyzing an extensive set of x-ray-diffraction data recorded with monochromatic ($\hbar\omega$ = 9.1 keV) synchrotron radiation.…

We investigate topological phases in two-dimensional Bi/Sb honeycomb crystals considering planar, buckled, freestanding and deposited on a substrate structures. We use the multi-orbital tight-binding model and compare results with density…

材料科学 · 物理学 2018-09-26 N. Nouri , M. Bieniek , M. Brzezinska , M. Modarresi , S. Zia Borujeni , Gh. Rashedi , A. Wojs , P. Potasz

We discuss a generalization of the surface reconstruction arguments for the structure of intermediate size Si clusters, which leads to model geometries for the sizes 33, 39 (two isomers), 45 (two isomers), 49 (two isomers), 57 and 61 (two…

材料科学 · 物理学 2009-10-30 Efthimios Kaxiras

Si(331)-(12x1) is the only confirmed planar silicon surface with a stable reconstruction located between (111) and (110). We have optimized the annealing sequence and are able to obtain almost defect free, atomically precise surface areas…

Semimetals, in which conduction and valence bands touch but do not form Fermi surfaces, have attracted considerable interest for their anomalous properties starting with the discovery of Dirac matter in graphene and other two-dimensional…

强关联电子 · 物理学 2018-09-11 Dennis Wawrzik , David Lindner , Maria Hermanns , Simon Trebst

The rare-earth pyrosilicate family of compounds (RE$_{2}$Si$_{2}$O$_{7}$) hosts a variety of polymorphs, some with honeycomb-like geometries of the rare-earth sublattices, and the magnetism has yet to be deeply explored in many of the…

强关联电子 · 物理学 2021-02-18 Gavin Hester , T. N. DeLazzer , S. S. Lim , C. M. Brown , K. A. Ross

Two-dimensional arsenic allotropes have been grown on metallic surfaces, while topological properties have been theoretically described on strained structures. Here we experimentally grow arsenene by molecular beam epitaxy over the…

材料科学 · 物理学 2023-04-17 A. K. Okazaki , R. Furlan de Oliveira , R. L. H. Freire , A. Fazzio , F. Crasto de Lima

The "multilayer silicene" films were grown on Ag(111), with increasing thickness above 30 monolayers (ML). We found that the "multilayer silicene" is indeed a bulk Si(111) film. Such Si film on Ag(111) always exhibits a root(3)xroot(3)…

介观与纳米尺度物理 · 物理学 2014-05-30 Jian Chen , Wenbin Li , Baojie Feng , Peng Cheng , Jinglan Qiu , Lan Chen , Kehui Wu

We present an extension to the two-dimensional functional renormalization group to efficiently treat interactions on the surface or at interfaces of three-dimensional systems. As an application, we consider a semi-infinite stack of…

强关联电子 · 物理学 2026-04-10 Lennart Klebl , Dante M. Kennes

We propose a new principle to realize flatbands which are robust in real materials, based on a network superstructure of one-dimensional segments. This mechanism is naturally realized in the nearly commensurate charge-density wave of…

It is a well-established fact that the physical properties of compounds follow their crystal symmetries. This has especially pronounced implications on emergent collective quantum states in materials. Specifically, the effect of crystal…

The interplay of $sp^2$- and $sp^3$-type bonding defines silicon allotropes in two- and three-dimensional forms. A novel two-dimensional phase bearing structural resembleance to a single MoS$_2$ layer is found to possess a lower total…

Layered IV-VI$_2$ compounds often exist in the CdI$_2$ structure. Using the evolution algorithm and first-principles calculations, we predict a novel layered structure of silicon ditelluride (SiTe$_2$) that is more stable than the CdI$_2$…

材料科学 · 物理学 2020-04-27 Romakanta Bhattarai , Xiao Shen

Epitaxial silicene, which is one single layer of silicon atoms packed in a honeycomb structure, demonstrates a strong interaction with the substrate that dramatically affects its electronic structure. The role of electronic coupling in the…

介观与纳米尺度物理 · 物理学 2014-12-08 Xun Xu , Jincheng Zhuang , Yi Du , Haifeng Feng , Nian Zhang , Chen Liu , Tao Lei , Jiaou Wang , Michelle Spencer , Tetsuya Morishita , Xiaolin Wang , Shi Xue Dou

The search of new two-dimensional (2D) materials with novel optical and electronic properties is always desirable for material development. Here, we report a comprehensive theoretical prediction of 2D SiC compounds with different…

材料科学 · 物理学 2020-04-15 Dong Fan , Shaohua Lu , Yundong Guo , Xiaojun Hu

Surfaces of rutile-like RuO2, especially the most stable (110) surface, are important for catalysis, sensing and charge storage applications. Structure, chemical composition, and properties of the surface depend on external conditions.…

材料科学 · 物理学 2017-08-23 Hayk A. Zakaryan , Alexander G. Kvashnin , Artem R. Oganov

Based on first-principles calculation we predict two new thermodynamically stable layered-phases of silicon, named as silicites, which exhibit strong directionality in the electronic and structural properties. As compared to silicon…

介观与纳米尺度物理 · 物理学 2014-10-01 Seymur Cahangirov , V. Ongun Ozcelik , Angel Rubio , Salim Ciraci

Advancements in nanotechnology continue to unearth material vistas that presage a new age of revolutionary functionalities replete with unparalleled physical properties and avant-garde chemical capabilities that promise sweeping paradigm…

材料科学 · 物理学 2023-11-16 Godwill Mbiti Kanyolo , Titus Masese , Abbas Alshehabi , Zhen-Dong Huang