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相关论文: Domain wall-grain boundary interactions in polycry…

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Ferroelectric switching and nanoscale domain dynamics were investigated using atomic force microscopy on monocrystalline Pb(Zr0.2Ti0.8)O3 thin films. Measurements of domain size versus writing time reveal a two-step domain growth mechanism,…

无序系统与神经网络 · 物理学 2013-11-07 T. Tybell , P. Paruch , T. Giamarchi , J. -M. Triscone

Grain boundaries (GBs) and interfaces in polycrystalline materials are significant research subjects in the field of materials science. Despite a more than 50-year history of their study, there are still many open questions. The main…

材料科学 · 物理学 2021-06-28 Arslan B. Mazitov , Artem R. Oganov

An evidence that the dielectric ageing in the polydomain Pb(Zr0.45Ti0.55)O3 thin films is controlled by progressive pinning of 180 domain walls is presented. To provide such a conclusion, we use a general method, which is based on the study…

Ferroelectrics usually adopt a multi-domain state with domain walls separating domains with polarization axes oriented differently. It has long been recognized that domain walls can dramatically impact the properties of ferroelectric…

材料科学 · 物理学 2017-03-15 Shi Liu , R. E. Cohen

We investigated the time-dependent domain wall motion of epitaxial PbZr0.2Ti0.8O3 capacitors 100 nm-thick using modified piezoresponse force microscopy (PFM). We obtained successive domain evolution images reliably by combining the PFM with…

材料科学 · 物理学 2009-11-13 S. M. Yang , J. Y. Jo , D. J. Kim , H. Sung , T. W. Noh , H. N. Lee , J. -G. Yoon , T. K. Song

We revealed the anomalous temperature behavior of the giant dielectric permittivity and unusual frequency dependences of the pyroelectric response of the fine-grained ceramics prepared by the spark plasma sintering of the ferroelectric…

Interfaces at the two-dimensional limit in oxide materials exhibit a rich span of functionality that differs significantly from the bulk behavior. Among such interfaces, domain walls in ferroelectrics draw special attention because they can…

材料科学 · 物理学 2020-02-19 Maya Barzilay , Yachin Ivry

Among the recent discoveries of domain wall functionalities, the observation of electrical conduction at ferroelectric domain walls in the multiferroic insulator BiFeO3 has opened exciting new possibilities. Here, we report evidence of…

材料科学 · 物理学 2012-05-02 J. Guyonnet , I. Gaponenko , S. Gariglio , P. Paruch

There is growing evidence that domain walls in ferroics can possess emergent properties that are absent in bulk materials. For example, 180 domain walls in the ferroelectric-antiferromagnetic BiFeO3 are particularly interesting because they…

We report on the frequency and stress dependence of the direct piezoelectric d33 coefficient in BiFeO3 ceramics. The measurements reveal considerable piezoelectric nonlinearity, i.e., dependence of d33 on the amplitude of the dynamic…

材料科学 · 物理学 2015-06-11 Tadej Rojac , Andreja Bencan , Goran Drazic , Marija Kosec , Dragan Damjanovic

Using the model system of ferroelectric domain walls, we explore the effects of long-range dipolar interactions and periodic ordering on the behavior of pinned elastic interfaces. In piezoresponse force microscopy studies of the…

无序系统与神经网络 · 物理学 2014-02-18 B. Ziegler , K. Martens , T. Giamarchi , P. Paruch

We have investigated the atomistic structure of the 180-degree and 90-degree domain boundaries in the ferroelectric perovskite compound PbTiO3 using a first-principles ultrasoft-pseudopotential approach. For each case we have computed the…

材料科学 · 物理学 2009-11-07 B. Meyer , David Vanderbilt

Though the electrical responses of the various polymorphs found in ferroelectric polycrystalline thin film HfO$_2$ are now well characterized, little is currently understood of this novel material's grain sub-structure. In particular, the…

材料科学 · 物理学 2017-09-26 Everett D. Grimley , Tony Schenk , Thomas Mikolajick , Uwe Schroeder , James M. LeBeau

The influence of the grain size in the magnetic properties of phase separated manganites is an important issue evidenced more than a decade ago. The formation of long range ordered phases is suppressed as the grain size decreases giving…

强关联电子 · 物理学 2015-06-23 M. Quintero , S. Passanante , I. Irurzub , D. Goijman , G. Polla

Specific heat of polycrystalline BaTiO3 thin films on the fused quartz substrate was measured by ac-hot probe method. Phase transition temperature, excess entropy and spontaneous polarization were determined as a function of film thickness…

材料科学 · 物理学 2007-05-23 B. A. Strukov , S. T. Davitadze , S. G. Shulman , B. M. Goltzman , V. V. Lemanov

Resistance of vacuum deposited ${\rm Sb_2Te_3}$ films of thickness between 100-500nm has been measured in vacuum. It is found that the resistance of the polycrystalline films strongly depends on the grain size and inter-granular voids. The…

材料科学 · 物理学 2007-05-23 P. Arun , A. G. Vedeshwar

Large bipolar strain of up to 0.36% (peak-to-peak value) was measured in BiFeO3 ceramics at low frequency (0.1 Hz) and large amplitude (140 kV/cm) of the driving field. This strain is comparable to that achievable in highly efficient…

材料科学 · 物理学 2011-12-06 Tadej Rojac , Marija Kosec , Dragan Damjanovic

Ferroelectrics have a spontaneous electrical polarization that is arranged into domains and can be reversed by an externally applied field. This high versatility makes them useful in enabling components such as capacitors, sensors, and…

材料科学 · 物理学 2025-10-29 J. Schultheiß , G. Picht , J. Wang , Y. A. Genenko , L. Q. Chen , J. E. Daniels , J. Koruza

In studies using piezoresponse force microscopy, we observe a non-zero lateral piezoresponse at 180$^\circ$ domain walls in out-of-plane polarized, c-axis-oriented tetragonal ferroelectric Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$ epitaxial thin films.…

材料科学 · 物理学 2010-09-03 J. Guyonnet , H. Bea , F. Guy , S. Gariglio , S. Fusil , K. Bouzehouane , J. -M. Triscone , P. Paruch

The structural evolution of a polydomain ferroelectric Pb(Zr0.2Ti0.8)O3 film was studied by temperature dependent X-ray diffraction. Two critical temperatures were evidenced: T*=740K, corresponding to a change in the domain structure…